Central Semiconductor Corp 2N5191
- Part Number:
- 2N5191
- Manufacturer:
- Central Semiconductor Corp
- Ventron No:
- 2470727-2N5191
- Description:
- TRANS NPN 60V 4A TO126
- Datasheet:
- 2N5191,92
Central Semiconductor Corp 2N5191 technical specifications, attributes, parameters and parts with similar specifications to Central Semiconductor Corp 2N5191.
- Mounting TypeThrough Hole
- Package / CaseTO-225AA, TO-126-3
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingBulk
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTIN LEAD
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)240
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Power - Max40W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 1.5A 2V
- Current - Collector Cutoff (Max)1mA
- Vce Saturation (Max) @ Ib, Ic1.4V @ 1A, 4A
- Voltage - Collector Emitter Breakdown (Max)60V
- Current - Collector (Ic) (Max)4A
- Transition Frequency2MHz
- Frequency - Transition2MHz
- RoHS StatusNon-RoHS Compliant
2N5191 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 25 @ 1.5A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.4V @ 1A, 4A.Parts of this part have transition frequencies of 2MHz.This device displays a 60V maximum voltage - Collector Emitter Breakdown.
2N5191 Features
the DC current gain for this device is 25 @ 1.5A 2V
the vce saturation(Max) is 1.4V @ 1A, 4A
a transition frequency of 2MHz
2N5191 Applications
There are a lot of Rochester Electronics, LLC
2N5191 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 25 @ 1.5A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.4V @ 1A, 4A.Parts of this part have transition frequencies of 2MHz.This device displays a 60V maximum voltage - Collector Emitter Breakdown.
2N5191 Features
the DC current gain for this device is 25 @ 1.5A 2V
the vce saturation(Max) is 1.4V @ 1A, 4A
a transition frequency of 2MHz
2N5191 Applications
There are a lot of Rochester Electronics, LLC
2N5191 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N5191 More Descriptions
2N5191 Series NPN 60 V 4 A Power Transistor Through Hole - SOT-32
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Trans GP BJT PNP 60V 4A 3-Pin(3 Tab) SOT-32 Tube
BIPOLAR Transistor, NPN, 60V; Transistor; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition
Bipolar Transistor, Npn, 60V; Transistor Polarity:Npn; Collector Emitter Voltage Max:60V; Continuous Collector Current:4A; Power Dissipation:40W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:-; Msl:- Rohs Compliant: Yes |Stmicroelectronics 2N5191
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Trans GP BJT PNP 60V 4A 3-Pin(3 Tab) SOT-32 Tube
BIPOLAR Transistor, NPN, 60V; Transistor; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition
Bipolar Transistor, Npn, 60V; Transistor Polarity:Npn; Collector Emitter Voltage Max:60V; Continuous Collector Current:4A; Power Dissipation:40W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:-; Msl:- Rohs Compliant: Yes |Stmicroelectronics 2N5191
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