2N5191

Central Semiconductor Corp 2N5191

Part Number:
2N5191
Manufacturer:
Central Semiconductor Corp
Ventron No:
2470727-2N5191
Description:
TRANS NPN 60V 4A TO126
ECAD Model:
Datasheet:
2N5191,92

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Specifications
Central Semiconductor Corp 2N5191 technical specifications, attributes, parameters and parts with similar specifications to Central Semiconductor Corp 2N5191.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-225AA, TO-126-3
  • Surface Mount
    NO
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Bulk
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    TIN LEAD
  • Terminal Position
    SINGLE
  • Peak Reflow Temperature (Cel)
    240
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    3
  • JESD-30 Code
    R-PSFM-T3
  • Qualification Status
    COMMERCIAL
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power - Max
    40W
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    25 @ 1.5A 2V
  • Current - Collector Cutoff (Max)
    1mA
  • Vce Saturation (Max) @ Ib, Ic
    1.4V @ 1A, 4A
  • Voltage - Collector Emitter Breakdown (Max)
    60V
  • Current - Collector (Ic) (Max)
    4A
  • Transition Frequency
    2MHz
  • Frequency - Transition
    2MHz
  • RoHS Status
    Non-RoHS Compliant
Description
2N5191 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 25 @ 1.5A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.4V @ 1A, 4A.Parts of this part have transition frequencies of 2MHz.This device displays a 60V maximum voltage - Collector Emitter Breakdown.

2N5191 Features
the DC current gain for this device is 25 @ 1.5A 2V
the vce saturation(Max) is 1.4V @ 1A, 4A
a transition frequency of 2MHz


2N5191 Applications
There are a lot of Rochester Electronics, LLC
2N5191 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
2N5191 More Descriptions
2N5191 Series NPN 60 V 4 A Power Transistor Through Hole - SOT-32
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Trans GP BJT PNP 60V 4A 3-Pin(3 Tab) SOT-32 Tube
BIPOLAR Transistor, NPN, 60V; Transistor; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition
Bipolar Transistor, Npn, 60V; Transistor Polarity:Npn; Collector Emitter Voltage Max:60V; Continuous Collector Current:4A; Power Dissipation:40W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:-; Msl:- Rohs Compliant: Yes |Stmicroelectronics 2N5191
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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