2N4250

Central Semiconductor Corp 2N4250

Part Number:
2N4250
Manufacturer:
Central Semiconductor Corp
Ventron No:
2470038-2N4250
Description:
TRANSISTOR PNP TO-106
ECAD Model:
Datasheet:
2N4250

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Specifications
Central Semiconductor Corp 2N4250 technical specifications, attributes, parameters and parts with similar specifications to Central Semiconductor Corp 2N4250.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-106-3 Domed
  • Surface Mount
    NO
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Bulk
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • HTS Code
    8541.21.00.95
  • Subcategory
    Other Transistors
  • Terminal Position
    BOTTOM
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    O-PBCY-T3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power - Max
    200mW
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    250 @ 10mA 5V
  • Current - Collector Cutoff (Max)
    10nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 500μA, 10mA
  • Voltage - Collector Emitter Breakdown (Max)
    40V
  • Transition Frequency
    50MHz
  • Frequency - Transition
    50MHz
  • Power Dissipation-Max (Abs)
    0.2W
  • RoHS Status
    Non-RoHS Compliant
Description
2N4250 Overview
This device has a DC current gain of 250 @ 10mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 50MHz.Detection of Collector Emitter Breakdown at 40V maximal voltage is present.

2N4250 Features
the DC current gain for this device is 250 @ 10mA 5V
the vce saturation(Max) is 250mV @ 500μA, 10mA
a transition frequency of 50MHz


2N4250 Applications
There are a lot of Central Semiconductor Corp
2N4250 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
2N4250 More Descriptions
Transistor PNP 2N4250 FAIRCHILD V=40 TO106
French Electronic Distributor since 1988
Product Comparison
The three parts on the right have similar specifications to 2N4250.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    HTS Code
    Subcategory
    Terminal Position
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Transistor Type
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Voltage - Collector Emitter Breakdown (Max)
    Transition Frequency
    Frequency - Transition
    Power Dissipation-Max (Abs)
    RoHS Status
    Supplier Device Package
    Base Part Number
    Current - Collector (Ic) (Max)
    Lifecycle Status
    Factory Lead Time
    Mount
    Number of Pins
    ECCN Code
    Max Power Dissipation
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Base Voltage (VCBO)
    Radiation Hardening
    View Compare
  • 2N4250
    2N4250
    Through Hole
    TO-106-3 Domed
    NO
    SILICON
    -55°C~150°C TJ
    Bulk
    e0
    no
    Obsolete
    1 (Unlimited)
    3
    Tin/Lead (Sn/Pb)
    8541.21.00.95
    Other Transistors
    BOTTOM
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    O-PBCY-T3
    Not Qualified
    1
    SINGLE
    200mW
    AMPLIFIER
    PNP
    PNP
    250 @ 10mA 5V
    10nA ICBO
    250mV @ 500μA, 10mA
    40V
    50MHz
    50MHz
    0.2W
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • 2N4234
    Through Hole
    TO-205AD, TO-39-3 Metal Can
    -
    -
    -
    Bulk
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    6W
    -
    -
    PNP
    30 @ 250mA 1V
    -
    600mV @ 125mA, 1A
    40V
    -
    -
    -
    Non-RoHS Compliant
    TO-39
    2N4234
    1A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • 2N4250A
    Through Hole
    TO-106-3 Domed
    NO
    SILICON
    -55°C~150°C TJ
    Bulk
    e0
    no
    Obsolete
    1 (Unlimited)
    3
    Tin/Lead (Sn/Pb)
    8541.21.00.95
    Other Transistors
    BOTTOM
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    O-PBCY-T3
    Not Qualified
    1
    SINGLE
    200mW
    AMPLIFIER
    PNP
    PNP
    250 @ 100μA 5V
    10nA ICBO
    250mV @ 500μA, 10mA
    60V
    100MHz
    -
    0.2W
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • 2N4261
    Through Hole
    TO-72-3 Metal Can
    -
    -
    -65°C~200°C TJ
    Bulk
    -
    -
    Active
    1 (Unlimited)
    -
    -
    -
    Other Transistors
    -
    -
    -
    -
    -
    -
    -
    Single
    200mW
    -
    PNP
    PNP
    30 @ 10mA 1V
    10μA ICBO
    350mV @ 1mA, 10mA
    -
    2000MHz
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    IN PRODUCTION (Last Updated: 1 month ago)
    12 Weeks
    Through Hole
    3
    EAR99
    200mW
    15V
    30mA
    15V
    No
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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