Central Semiconductor Corp 2N4250
- Part Number:
- 2N4250
- Manufacturer:
- Central Semiconductor Corp
- Ventron No:
- 2470038-2N4250
- Description:
- TRANSISTOR PNP TO-106
- Datasheet:
- 2N4250
Central Semiconductor Corp 2N4250 technical specifications, attributes, parameters and parts with similar specifications to Central Semiconductor Corp 2N4250.
- Mounting TypeThrough Hole
- Package / CaseTO-106-3 Domed
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTin/Lead (Sn/Pb)
- HTS Code8541.21.00.95
- SubcategoryOther Transistors
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeO-PBCY-T3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Power - Max200mW
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce250 @ 10mA 5V
- Current - Collector Cutoff (Max)10nA ICBO
- Vce Saturation (Max) @ Ib, Ic250mV @ 500μA, 10mA
- Voltage - Collector Emitter Breakdown (Max)40V
- Transition Frequency50MHz
- Frequency - Transition50MHz
- Power Dissipation-Max (Abs)0.2W
- RoHS StatusNon-RoHS Compliant
2N4250 Overview
This device has a DC current gain of 250 @ 10mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 50MHz.Detection of Collector Emitter Breakdown at 40V maximal voltage is present.
2N4250 Features
the DC current gain for this device is 250 @ 10mA 5V
the vce saturation(Max) is 250mV @ 500μA, 10mA
a transition frequency of 50MHz
2N4250 Applications
There are a lot of Central Semiconductor Corp
2N4250 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 250 @ 10mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 50MHz.Detection of Collector Emitter Breakdown at 40V maximal voltage is present.
2N4250 Features
the DC current gain for this device is 250 @ 10mA 5V
the vce saturation(Max) is 250mV @ 500μA, 10mA
a transition frequency of 50MHz
2N4250 Applications
There are a lot of Central Semiconductor Corp
2N4250 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N4250 More Descriptions
Transistor PNP 2N4250 FAIRCHILD V=40 TO106
French Electronic Distributor since 1988
French Electronic Distributor since 1988
The three parts on the right have similar specifications to 2N4250.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishHTS CodeSubcategoryTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Transition FrequencyFrequency - TransitionPower Dissipation-Max (Abs)RoHS StatusSupplier Device PackageBase Part NumberCurrent - Collector (Ic) (Max)Lifecycle StatusFactory Lead TimeMountNumber of PinsECCN CodeMax Power DissipationCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Base Voltage (VCBO)Radiation HardeningView Compare
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2N4250Through HoleTO-106-3 DomedNOSILICON-55°C~150°C TJBulke0noObsolete1 (Unlimited)3Tin/Lead (Sn/Pb)8541.21.00.95Other TransistorsBOTTOMNOT SPECIFIEDnot_compliantNOT SPECIFIEDO-PBCY-T3Not Qualified1SINGLE200mWAMPLIFIERPNPPNP250 @ 10mA 5V10nA ICBO250mV @ 500μA, 10mA40V50MHz50MHz0.2WNon-RoHS Compliant--------------
-
Through HoleTO-205AD, TO-39-3 Metal Can---Bulk--Obsolete1 (Unlimited)------------6W--PNP30 @ 250mA 1V-600mV @ 125mA, 1A40V---Non-RoHS CompliantTO-392N42341A----------
-
Through HoleTO-106-3 DomedNOSILICON-55°C~150°C TJBulke0noObsolete1 (Unlimited)3Tin/Lead (Sn/Pb)8541.21.00.95Other TransistorsBOTTOMNOT SPECIFIEDnot_compliantNOT SPECIFIEDO-PBCY-T3Not Qualified1SINGLE200mWAMPLIFIERPNPPNP250 @ 100μA 5V10nA ICBO250mV @ 500μA, 10mA60V100MHz-0.2WNon-RoHS Compliant-------------
-
Through HoleTO-72-3 Metal Can---65°C~200°C TJBulk--Active1 (Unlimited)---Other Transistors-------Single200mW-PNPPNP30 @ 10mA 1V10μA ICBO350mV @ 1mA, 10mA-2000MHz--Non-RoHS Compliant---IN PRODUCTION (Last Updated: 1 month ago)12 WeeksThrough Hole3EAR99200mW15V30mA15VNo
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