Microsemi Corporation 2N4236
- Part Number:
- 2N4236
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2465248-2N4236
- Description:
- TRANS PNP 80V 1A TO-39
- Datasheet:
- 2N4236
Microsemi Corporation 2N4236 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 2N4236.
- Lifecycle StatusIN PRODUCTION (Last Updated: 1 month ago)
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-205AD, TO-39-3 Metal Can
- Number of Pins3
- Supplier Device PackageTO-39 (TO-205AD)
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- Published2002
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature200°C
- Min Operating Temperature-65°C
- Max Power Dissipation1W
- Base Part Number2N4236
- Number of Elements1
- PolarityNPN
- Power Dissipation1W
- Power - Max1W
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 250mA 1V
- Current - Collector Cutoff (Max)1mA
- Vce Saturation (Max) @ Ib, Ic600mV @ 100mA, 1A
- Collector Emitter Breakdown Voltage80V
- Voltage - Collector Emitter Breakdown (Max)80V
- Current - Collector (Ic) (Max)1A
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)7V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
2N4236 Overview
In this device, the DC current gain is 30 @ 250mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 100mA, 1A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.Supplier device package TO-39 (TO-205AD) comes with the product.The device exhibits a collector-emitter breakdown at 80V.Maximum collector currents can be below 1A volts.
2N4236 Features
the DC current gain for this device is 30 @ 250mA 1V
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 7V
the supplier device package of TO-39 (TO-205AD)
2N4236 Applications
There are a lot of Microsemi Corporation
2N4236 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 30 @ 250mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 100mA, 1A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.Supplier device package TO-39 (TO-205AD) comes with the product.The device exhibits a collector-emitter breakdown at 80V.Maximum collector currents can be below 1A volts.
2N4236 Features
the DC current gain for this device is 30 @ 250mA 1V
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 7V
the supplier device package of TO-39 (TO-205AD)
2N4236 Applications
There are a lot of Microsemi Corporation
2N4236 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N4236 More Descriptions
Transistor GP BJT PNP 80V 1A 3-Pin TO-39Avnet Japan
Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Transition Frequency ft:3MHz; Power Dissipation Pd:1W; DC Current:-1A;
Bipolar Transistor, Pnp, -80V To-39; Transistor Polarity:Pnp; Collector Emitter Voltage Max:80V; Continuous Collector Current:1A; Power Dissipation:1W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:3Mhz Rohs Compliant: Yes |Multicomp Pro 2N4236
TRANSISTOR,PNP,3A,80V,TO39; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -80V; Transition Frequency ft: 3MHz; Power Dissipation Pd: 1W; DC Collector Current: -1A; DC Current Gain hFE: 40hFE; Transistor Case Style: TO-39; No. of Pins: 3Pins; Operating Temperature Max: 200°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Gain Bandwidth ft Typ: 3MHz; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 200°C
Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Transition Frequency ft:3MHz; Power Dissipation Pd:1W; DC Current:-1A;
Bipolar Transistor, Pnp, -80V To-39; Transistor Polarity:Pnp; Collector Emitter Voltage Max:80V; Continuous Collector Current:1A; Power Dissipation:1W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:3Mhz Rohs Compliant: Yes |Multicomp Pro 2N4236
TRANSISTOR,PNP,3A,80V,TO39; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -80V; Transition Frequency ft: 3MHz; Power Dissipation Pd: 1W; DC Collector Current: -1A; DC Current Gain hFE: 40hFE; Transistor Case Style: TO-39; No. of Pins: 3Pins; Operating Temperature Max: 200°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Gain Bandwidth ft Typ: 3MHz; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 200°C
The three parts on the right have similar specifications to 2N4236.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureMax Power DissipationBase Part NumberNumber of ElementsPolarityPower DissipationPower - MaxTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Collector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Radiation HardeningRoHS StatusSurface MountTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsTerminal FinishHTS CodeSubcategoryTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationTransistor ApplicationPolarity/Channel TypeTransition FrequencyFrequency - TransitionPower Dissipation-Max (Abs)ECCN CodeView Compare
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2N4236IN PRODUCTION (Last Updated: 1 month ago)12 WeeksThrough HoleThrough HoleTO-205AD, TO-39-3 Metal Can3TO-39 (TO-205AD)-65°C~200°C TJBulk2002Active1 (Unlimited)200°C-65°C1W2N42361NPN1W1WPNP80V1A30 @ 250mA 1V1mA600mV @ 100mA, 1A80V80V1A80V7VNoNon-RoHS Compliant----------------------
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---Through HoleTO-205AD, TO-39-3 Metal Can-TO-39-Bulk-Obsolete1 (Unlimited)---2N4234---6WPNP--30 @ 250mA 1V-600mV @ 125mA, 1A-40V1A---Non-RoHS Compliant---------------------
-
---Through HoleTO-106-3 Domed---55°C~150°C TJBulk-Obsolete1 (Unlimited)----1--200mWPNP--250 @ 10mA 5V10nA ICBO250mV @ 500μA, 10mA-40V----Non-RoHS CompliantNOSILICONe0no3Tin/Lead (Sn/Pb)8541.21.00.95Other TransistorsBOTTOMNOT SPECIFIEDnot_compliantNOT SPECIFIEDO-PBCY-T3Not QualifiedSINGLEAMPLIFIERPNP50MHz50MHz0.2W-
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IN PRODUCTION (Last Updated: 1 month ago)12 WeeksThrough HoleThrough HoleTO-72-3 Metal Can3--65°C~200°C TJBulk-Active1 (Unlimited)--200mW----200mWPNP15V30mA30 @ 10mA 1V10μA ICBO350mV @ 1mA, 10mA---15V-NoNon-RoHS Compliant-------Other Transistors------Single-PNP2000MHz--EAR99
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