2N4236

Microsemi Corporation 2N4236

Part Number:
2N4236
Manufacturer:
Microsemi Corporation
Ventron No:
2465248-2N4236
Description:
TRANS PNP 80V 1A TO-39
ECAD Model:
Datasheet:
2N4236

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Microsemi Corporation 2N4236 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 2N4236.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Factory Lead Time
    12 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-205AD, TO-39-3 Metal Can
  • Number of Pins
    3
  • Supplier Device Package
    TO-39 (TO-205AD)
  • Operating Temperature
    -65°C~200°C TJ
  • Packaging
    Bulk
  • Published
    2002
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    200°C
  • Min Operating Temperature
    -65°C
  • Max Power Dissipation
    1W
  • Base Part Number
    2N4236
  • Number of Elements
    1
  • Polarity
    NPN
  • Power Dissipation
    1W
  • Power - Max
    1W
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    80V
  • Max Collector Current
    1A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    30 @ 250mA 1V
  • Current - Collector Cutoff (Max)
    1mA
  • Vce Saturation (Max) @ Ib, Ic
    600mV @ 100mA, 1A
  • Collector Emitter Breakdown Voltage
    80V
  • Voltage - Collector Emitter Breakdown (Max)
    80V
  • Current - Collector (Ic) (Max)
    1A
  • Collector Base Voltage (VCBO)
    80V
  • Emitter Base Voltage (VEBO)
    7V
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
Description
2N4236 Overview
In this device, the DC current gain is 30 @ 250mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 100mA, 1A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.Supplier device package TO-39 (TO-205AD) comes with the product.The device exhibits a collector-emitter breakdown at 80V.Maximum collector currents can be below 1A volts.

2N4236 Features
the DC current gain for this device is 30 @ 250mA 1V
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 7V
the supplier device package of TO-39 (TO-205AD)


2N4236 Applications
There are a lot of Microsemi Corporation
2N4236 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
2N4236 More Descriptions
Transistor GP BJT PNP 80V 1A 3-Pin TO-39Avnet Japan
Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Transition Frequency ft:3MHz; Power Dissipation Pd:1W; DC Current:-1A;
Bipolar Transistor, Pnp, -80V To-39; Transistor Polarity:Pnp; Collector Emitter Voltage Max:80V; Continuous Collector Current:1A; Power Dissipation:1W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:3Mhz Rohs Compliant: Yes |Multicomp Pro 2N4236
TRANSISTOR,PNP,3A,80V,TO39; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -80V; Transition Frequency ft: 3MHz; Power Dissipation Pd: 1W; DC Collector Current: -1A; DC Current Gain hFE: 40hFE; Transistor Case Style: TO-39; No. of Pins: 3Pins; Operating Temperature Max: 200°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Gain Bandwidth ft Typ: 3MHz; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 200°C
Product Comparison
The three parts on the right have similar specifications to 2N4236.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Max Power Dissipation
    Base Part Number
    Number of Elements
    Polarity
    Power Dissipation
    Power - Max
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    Radiation Hardening
    RoHS Status
    Surface Mount
    Transistor Element Material
    JESD-609 Code
    Pbfree Code
    Number of Terminations
    Terminal Finish
    HTS Code
    Subcategory
    Terminal Position
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Configuration
    Transistor Application
    Polarity/Channel Type
    Transition Frequency
    Frequency - Transition
    Power Dissipation-Max (Abs)
    ECCN Code
    View Compare
  • 2N4236
    2N4236
    IN PRODUCTION (Last Updated: 1 month ago)
    12 Weeks
    Through Hole
    Through Hole
    TO-205AD, TO-39-3 Metal Can
    3
    TO-39 (TO-205AD)
    -65°C~200°C TJ
    Bulk
    2002
    Active
    1 (Unlimited)
    200°C
    -65°C
    1W
    2N4236
    1
    NPN
    1W
    1W
    PNP
    80V
    1A
    30 @ 250mA 1V
    1mA
    600mV @ 100mA, 1A
    80V
    80V
    1A
    80V
    7V
    No
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • 2N4234
    -
    -
    -
    Through Hole
    TO-205AD, TO-39-3 Metal Can
    -
    TO-39
    -
    Bulk
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    2N4234
    -
    -
    -
    6W
    PNP
    -
    -
    30 @ 250mA 1V
    -
    600mV @ 125mA, 1A
    -
    40V
    1A
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • 2N4250
    -
    -
    -
    Through Hole
    TO-106-3 Domed
    -
    -
    -55°C~150°C TJ
    Bulk
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    1
    -
    -
    200mW
    PNP
    -
    -
    250 @ 10mA 5V
    10nA ICBO
    250mV @ 500μA, 10mA
    -
    40V
    -
    -
    -
    -
    Non-RoHS Compliant
    NO
    SILICON
    e0
    no
    3
    Tin/Lead (Sn/Pb)
    8541.21.00.95
    Other Transistors
    BOTTOM
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    O-PBCY-T3
    Not Qualified
    SINGLE
    AMPLIFIER
    PNP
    50MHz
    50MHz
    0.2W
    -
  • 2N4261
    IN PRODUCTION (Last Updated: 1 month ago)
    12 Weeks
    Through Hole
    Through Hole
    TO-72-3 Metal Can
    3
    -
    -65°C~200°C TJ
    Bulk
    -
    Active
    1 (Unlimited)
    -
    -
    200mW
    -
    -
    -
    -
    200mW
    PNP
    15V
    30mA
    30 @ 10mA 1V
    10μA ICBO
    350mV @ 1mA, 10mA
    -
    -
    -
    15V
    -
    No
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    Other Transistors
    -
    -
    -
    -
    -
    -
    Single
    -
    PNP
    2000MHz
    -
    -
    EAR99
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • 04 March 2024

    ADS1248IPWR Specifications, Characteristics, Applications and Market Trends

    Ⅰ. Introduction to ADS1248IPWRⅡ. Specifications of ADS1248IPWRⅢ. Functional block diagram of ADS1248IPWRⅣ. Characteristics of ADS1248IPWRⅤ. Where is ADS1248IPWR used?Ⅵ. Absolute maximum ratings of ADS1248IPWRⅦ. Market trends of ADS1248IPWRⅧ....
  • 05 March 2024

    KA7500B: Efficient and Stable PWM Switching Regulator Controller

    Ⅰ. What is KA7500B?Ⅱ. Characteristics of KA7500BⅢ. KA7500B working parts and principleⅣ. Internal block diagram of KA7500BⅤ. Applications of KA7500BⅥ. Can KA7500B and KA7500BD be replaced?Ⅶ. How to...
  • 05 March 2024

    STM8S207CBT6 Microcontroller Functions, Specifications, Operating Principle and Package

    Ⅰ. STM8S207CBT6 overviewⅡ. Functions of STM8S207CBT6Ⅲ. STM8S207CBT6 specificationsⅣ. STM8S207CBT6 structure and operating principleⅤ. Package and dimensions of STM8S207CBT6Ⅵ. Four low-power modes of STM8S207CBT6 microcontrollerⅦ. Application areas of STM8S207CBT6Ⅰ....
  • 06 March 2024

    ATMEGA2560-16AU: A Versatile Embedded Microcontroller

    Ⅰ. ATMEGA2560-16AU overviewⅡ. Architecture of ATMEGA2560-16AUⅢ. ATMEGA2560-16AU block diagramⅣ. ATMEGA2560-16AU specificationsⅤ. Features of ATMEGA2560-16AUⅥ. Absolute maximum ratings of ATMEGA2560-16AUⅦ. Applications of ATMEGA2560-16AUWith the rapid development of science and...
  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.