Fairchild/ON Semiconductor 2N3906TA

Name: 2N3906TA
Brand: Fairchild/ON Semiconductor
SKU: 2463186-2N3906TA
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2N3906TA

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2463186-2N3906TA

Description:: TRANS PNP 40V 0.2A TO-92

ECAD Model:

Datasheet:: 2N3906TA

Specifications

Fairchild/ON Semiconductor 2N3906TA technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor 2N3906TA.

Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Factory Lead Time
6 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins
3
Weight
240mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Box (TB)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-40V
Max Power Dissipation
625mW
Terminal Position
BOTTOM
Current Rating
-200mA
Frequency
250MHz
Base Part Number
2N3906
Number of Elements
1
Element Configuration
Single
Power Dissipation
625mW
Transistor Application
SWITCHING
Gain Bandwidth Product
250MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA 1V
Vce Saturation (Max) @ Ib, Ic
400mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
40V
Transition Frequency
250MHz
Collector Emitter Saturation Voltage
-250mV
Max Breakdown Voltage
40V
Collector Base Voltage (VCBO)
-40V
Emitter Base Voltage (VEBO)
-5V
hFE Min
100
Turn On Time-Max (ton)
70ns
Height
5.33mm
Length
5.2mm
Width
4.19mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

2N3906TA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 1V.With a collector emitter saturation voltage of -250mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 50mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -200mA.A transition frequency of 250MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Collector current can be as low as 200mA volts at its maximum.

2N3906TA Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -200mA
a transition frequency of 250MHz

2N3906TA Applications
There are a lot of ON Semiconductor
2N3906TA applications of single BJT transistors.

Inverter
Interface
Driver
Muting

2N3906TA More Descriptions

Transistor General Purpose BJT PNP 40 Volt 0.2 Amp 3-Pin TO-92 Ammo
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
200 mA, 40 V PNP Small Signal Bipolar Junction Transistor
40V 625mW 200mA 100@10mA1V 250MHz 400mV@50mA5mA PNP -55¡Í~ 150¡Í@(Tj) TO-92-3L Bipolar Transistors - BJT ROHS
Transistor, BIPOL, PNP, -40V, TO-92-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency ft:250MHz; Power
This device is designed for general purpose amplifier and switching applications at collector currents of 10 µA to 100 mA.
TRANSISTOR, BIPOL, PNP, -40V, TO-92-3; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -40V; Transition Frequency ft: 250MHz; Power Dissipation Pd: 625mW; DC Collector Current: -; DC Current Gain hFE: 30hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Reverse Recovery Time trr Max: 60ns

Product Comparison

The three parts on the right have similar specifications to 2N3906TA.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Position

Current Rating

Frequency

Base Part Number

Number of Elements

Element Configuration

Power Dissipation

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Turn On Time-Max (ton)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Frequency - Transition

Supplier Device Package

Surface Mount

Terminal Finish

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Configuration

Turn Off Time-Max (toff)

View Compare
2N3906TA

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

6 Weeks

Tin

Through Hole

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

3

240mg

SILICON

-55°C~150°C TJ

Tape & Box (TB)

2007

e3

yes

Active

1 (Unlimited)

3

EAR99

Other Transistors

-40V

625mW

BOTTOM

-200mA

250MHz

2N3906

1

Single

625mW

SWITCHING

250MHz

PNP

PNP

40V

200mA

100 @ 10mA 1V

400mV @ 5mA, 50mA

40V

250MHz

-250mV

40V

-40V

-5V

100

70ns

5.33mm

5.2mm

4.19mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
2N3906_J18Z

Fairchild/ON Semiconductor

-

-

-

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

-

-

-

-55°C~150°C TJ

Bulk

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

2N3906

-

-

-

-

-

-

PNP

-

-

100 @ 10mA 1V

400mV @ 5mA, 50mA

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

625mW

40V

200mA

250MHz

-

-

-

-

-

-

-

-

-

-

-

2N3906TA vs 2N3906_J18Z
2N3904_D81Z

Fairchild/ON Semiconductor

-

-

-

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

2N3904

-

-

-

-

-

-

NPN

-

-

100 @ 10mA 1V

300mV @ 5mA, 50mA

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

625mW

40V

200mA

300MHz

TO-92-3

-

-

-

-

-

-

-

-

-

-

2N3906TA vs 2N3904_D81Z
2N3905TFR

Fairchild/ON Semiconductor

-

-

-

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

-

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

-

e3

yes

Obsolete

1 (Unlimited)

3

-

-

-

-

BOTTOM

-

-

-

1

-

-

SWITCHING

-

PNP

PNP

-

-

50 @ 10mA 1V

400mV @ 5mA, 50mA

-

-

-

-

-

-

-

70ns

-

-

-

-

-

ROHS3 Compliant

-

625mW

40V

200mA

-

-

NO

MATTE TIN

NOT APPLICABLE

unknown

NOT APPLICABLE

3

O-PBCY-T3

COMMERCIAL

SINGLE

260ns

2N3906TA vs 2N3905TFR