ON Semiconductor 2N3906G

Name: 2N3906G
Brand: ON Semiconductor
SKU: 2467921-2N3906G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2N3906G

Manufacturer:: ON Semiconductor

Ventron No:: 2467921-2N3906G

Description:: TRANS PNP 40V 0.2A TO-92

ECAD Model:

Datasheet:: 2N3906G

Specifications

ON Semiconductor 2N3906G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N3906G.

Lifecycle Status
LAST SHIPMENTS (Last Updated: 2 days ago)
Contact Plating
Copper, Silver, Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2007
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory
Other Transistors
Voltage - Rated DC
40V
Max Power Dissipation
625mW
Terminal Position
BOTTOM
Current Rating
200mA
Frequency
250MHz
Base Part Number
2N3906
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
625mW
Gain Bandwidth Product
250MHz
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA 1V
Vce Saturation (Max) @ Ib, Ic
400mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
40V
Transition Frequency
250MHz
Collector Emitter Saturation Voltage
400mV
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
5V
hFE Min
60
Turn On Time-Max (ton)
70ns
Height
5.33mm
Length
5.2mm
Width
4.19mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

2N3906G Overview
In this device, the DC current gain is 100 @ 10mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 400mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 5mA, 50mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 200mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.

2N3906G Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 200mA
a transition frequency of 250MHz

2N3906G Applications
There are a lot of ON Semiconductor
2N3906G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

2N3906G More Descriptions

Small Signal PNP Bipolar Transistor, TO-92 40 V, 0.2 A
Transistor, Bipolar,Si,PNP,General Purpose,VCEO 40VDC,IC 200mA,PD 1.5W,TO-92
Trans GP BJT PNP 40V 0.2A 3-Pin TO-92 Bulk
Bulk Through Hole General Purpose Single Bipolar (BJT) Transistor 100 @ 10mA 1V 200mA 625mW 250MHz
Bipolar Transistor; Transistor Polarity:PNP; Collector Emitter Voltage, V(br)ceo:40V; Collector Emitter Saturation Voltage, Vce(sat):0.4V; Power Dissipation, Pd:0.625W; DC Current Gain Min (hfe):100; Package/Case:TO-92 ;RoHS Compliant: Yes
TRANSISTOR, PNP, TO-92; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency Typ ft:250MHz; Power Dissipation Pd:625mW; DC Collector Current:200mA; DC Current Gain hFE:250; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:250mV; Current Ic Continuous a Max:50mA; Current Ic hFE:300mA; Gain Bandwidth ft Typ:250MHz; Hfe Min:30; Package / Case:TO-92; Power Dissipation Pd:625mW; Power Dissipation Ptot Max:625mW; Termination Type:Through Hole

Product Comparison

The three parts on the right have similar specifications to 2N3906G.

Image

Part Number

Manufacturer

Lifecycle Status

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Position

Current Rating

Frequency

Base Part Number

Pin Count

Number of Elements

Element Configuration

Power Dissipation

Gain Bandwidth Product

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Turn On Time-Max (ton)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Supplier Device Package

Frequency - Transition

View Compare
2N3906G

ON Semiconductor

LAST SHIPMENTS (Last Updated: 2 days ago)

Copper, Silver, Tin

Through Hole

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

3

SILICON

-55°C~150°C TJ

Bulk

2007

e1

yes

Obsolete

1 (Unlimited)

3

Through Hole

EAR99

Tin/Silver/Copper (Sn/Ag/Cu)

Other Transistors

40V

625mW

BOTTOM

200mA

250MHz

2N3906

3

1

Single

625mW

250MHz

PNP

40V

200mA

100 @ 10mA 1V

400mV @ 5mA, 50mA

40V

250MHz

400mV

40V

5V

60

70ns

5.33mm

5.2mm

4.19mm

No SVHC

No

RoHS Compliant

Lead Free

-

-

-

-

-

-
2N3905TAR

Fairchild/ON Semiconductor

-

-

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

-

-

-55°C~150°C TJ

Tape & Box (TB)

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

2N3905

-

-

-

-

-

PNP

-

-

50 @ 10mA 1V

400mV @ 5mA, 50mA

-

-

-

-

-

-

-

-

-

-

-

-

-

-

625mW

40V

200mA

-

-

2N3906G vs 2N3905TAR
2N3903_D74Z

Fairchild/ON Semiconductor

-

-

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

-

-

-55°C~150°C TJ

Tape & Box (TB)

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

2N3903

-

-

-

-

-

NPN

-

-

50 @ 10mA 1V

300mV @ 5mA, 50mA

-

-

-

-

-

-

-

-

-

-

-

-

-

-

625mW

40V

200mA

TO-92-3

-

2N3906G vs 2N3903_D74Z
2N3904_D81Z

Fairchild/ON Semiconductor

-

-

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

-

-

-55°C~150°C TJ

Tape & Reel (TR)

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

2N3904

-

-

-

-

-

NPN

-

-

100 @ 10mA 1V

300mV @ 5mA, 50mA

-

-

-

-

-

-

-

-

-

-

-

-

-

-

625mW

40V

200mA

TO-92-3

300MHz

2N3906G vs 2N3904_D81Z