Micro Commercial Co 2N3906-AP
- Part Number:
- 2N3906-AP
- Manufacturer:
- Micro Commercial Co
- Ventron No:
- 2845133-2N3906-AP
- Description:
- TRANS PNP 40V 0.2A TO92
- ECAD Model:
-
- Datasheet:
- 2N3906-AP
Micro Commercial Co 2N3906-AP technical specifications, attributes, parameters and parts with similar specifications to Micro Commercial Co 2N3906-AP.
- Factory Lead Time12 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Box (TB)
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)Not Applicable
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part Number2N3906
- Pin Count3
- JESD-30 CodeO-PBCY-T3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Power - Max600mW
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA 1V
- Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 50mA
- Voltage - Collector Emitter Breakdown (Max)40V
- Current - Collector (Ic) (Max)200mA
- Transition Frequency250MHz
- Frequency - Transition250MHz
- Power Dissipation-Max (Abs)0.6W
- Turn Off Time-Max (toff)300ns
- Turn On Time-Max (ton)70ns
- RoHS StatusROHS3 Compliant
2N3906-AP Overview
DC current gain in this device equals 100 @ 10mA 1V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 5mA, 50mA.As a result, the part has a transition frequency of 250MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
2N3906-AP Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
a transition frequency of 250MHz
2N3906-AP Applications
There are a lot of Micro Commercial Co
2N3906-AP applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 100 @ 10mA 1V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 5mA, 50mA.As a result, the part has a transition frequency of 250MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
2N3906-AP Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
a transition frequency of 250MHz
2N3906-AP Applications
There are a lot of Micro Commercial Co
2N3906-AP applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N3906-AP More Descriptions
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Trans GP BJT PNP 40V 0.2A 600mW 3-Pin TO-92 Ammo
Transistor: 200mA 625mW PNP General-Purpose Amplifier, TO-92
2N Series PNP 600 mW 200 mA Through Hole General Purpose Transistor - TO-92
TO-92 Bipolar Transistors - BJT ROHS
Trans GP BJT PNP 40V 0.2A 600mW 3-Pin TO-92 Ammo
Transistor: 200mA 625mW PNP General-Purpose Amplifier, TO-92
2N Series PNP 600 mW 200 mA Through Hole General Purpose Transistor - TO-92
TO-92 Bipolar Transistors - BJT ROHS
The three parts on the right have similar specifications to 2N3906-AP.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceVce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionPower Dissipation-Max (Abs)Turn Off Time-Max (toff)Turn On Time-Max (ton)RoHS StatusSupplier Device PackageView Compare
-
2N3906-AP12 WeeksThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)NOSILICON-55°C~150°C TJTape & Box (TB)2005e3yesActiveNot Applicable3EAR99Matte Tin (Sn)Other TransistorsBOTTOMNOT SPECIFIEDNOT SPECIFIED2N39063O-PBCY-T3Not Qualified1SINGLE600mWAMPLIFIERPNPPNP100 @ 10mA 1V400mV @ 5mA, 50mA40V200mA250MHz250MHz0.6W300ns70nsROHS3 Compliant-- -
-Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)---55°C~150°C TJTape & Box (TB)---Obsolete1 (Unlimited)-------2N3903-----625mW--NPN50 @ 10mA 1V300mV @ 5mA, 50mA40V200mA------TO-92-3
-
-Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)---55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)-------2N3904-----625mW--NPN100 @ 10mA 1V300mV @ 5mA, 50mA40V200mA-300MHz----TO-92-3
-
-Through HoleTO-226-3, TO-92-3 (TO-226AA)---55°C~150°C TJBulk---Obsolete1 (Unlimited)-------2N3906-----625mW--PNP100 @ 10mA 1V400mV @ 5mA, 50mA40V200mA-250MHz-----
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