Central Semiconductor Corp 2N3905
- Part Number:
- 2N3905
- Manufacturer:
- Central Semiconductor Corp
- Ventron No:
- 2845320-2N3905
- Description:
- TRANS PNP 40V TO-92
- Datasheet:
- 2N3905
Central Semiconductor Corp 2N3905 technical specifications, attributes, parameters and parts with similar specifications to Central Semiconductor Corp 2N3905.
- Factory Lead Time8 Weeks
- MountThrough Hole
- Package / CaseTO-92
- Published2011
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- HTS Code8541.21.00.75
- SubcategoryOther Transistors
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeO-PBCY-T3
- Qualification StatusNot Qualified
- Number of Elements1
- PolarityPNP
- Power Dissipation-Max625mW
- Element ConfigurationSingle
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product200MHz
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current50nA
- Collector Emitter Breakdown Voltage40V
- Transition Frequency200MHz
- Collector Emitter Saturation Voltage400mV
- Frequency - Transition200MHz
- Collector Base Voltage (VCBO)40V
- Emitter Base Voltage (VEBO)5V
- hFE Min30
- DC Current Gain-Min (hFE)15
- Continuous Collector Current200mA
- Turn Off Time-Max (toff)260ns
- Turn On Time-Max (ton)70ns
- RoHS StatusRoHS Compliant
- Lead FreeContains Lead
2N3905 Overview
The collector emitter saturation voltage is 400mV, which allows for maximum design flexibility.Continuous collector voltage should be kept at 200mA for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 200MHz.A maximum collector current of 50nA volts can be achieved.
2N3905 Features
a collector emitter saturation voltage of 400mV
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
2N3905 Applications
There are a lot of Central Semiconductor
2N3905 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The collector emitter saturation voltage is 400mV, which allows for maximum design flexibility.Continuous collector voltage should be kept at 200mA for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 200MHz.A maximum collector current of 50nA volts can be achieved.
2N3905 Features
a collector emitter saturation voltage of 400mV
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
2N3905 Applications
There are a lot of Central Semiconductor
2N3905 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N3905 More Descriptions
Transistor PNP Silicon 40V IC=200ma TO-92 Case General Purpose Amplifier And SwitchNTE Electronics
Trans GP BJT PNP 40V 0.2A 3-Pin TO-92
Transistor, Pnp, -40V; Transistor Polarity:Pnp; Collector Emitter Voltage Max:80V; Continuous Collector Current:200Ma; Power Dissipation:625Mw; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:-; Msl:- Rohs Compliant: Yes |Nte Electronics 2N3905
Trans GP BJT PNP 40V 0.2A 3-Pin TO-92
Transistor, Pnp, -40V; Transistor Polarity:Pnp; Collector Emitter Voltage Max:80V; Continuous Collector Current:200Ma; Power Dissipation:625Mw; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:-; Msl:- Rohs Compliant: Yes |Nte Electronics 2N3905
The three parts on the right have similar specifications to 2N3905.
-
ImagePart NumberManufacturerFactory Lead TimeMountPackage / CasePublishedJESD-609 CodePbfree CodePart StatusNumber of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureHTS CodeSubcategoryTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsPolarityPower Dissipation-MaxElement ConfigurationTransistor ApplicationGain Bandwidth ProductCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinDC Current Gain-Min (hFE)Continuous Collector CurrentTurn Off Time-Max (toff)Turn On Time-Max (ton)RoHS StatusLead FreeMounting TypeSupplier Device PackageOperating TemperaturePackagingMoisture Sensitivity Level (MSL)Base Part NumberPower - MaxTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceVce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Surface MountTransistor Element MaterialReach Compliance CodeConfigurationPolarity/Channel TypeView Compare
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2N39058 WeeksThrough HoleTO-922011e0noActive3EAR99Tin/Lead (Sn/Pb)150°C-55°C8541.21.00.75Other TransistorsBOTTOMNOT SPECIFIEDNOT SPECIFIED3O-PBCY-T3Not Qualified1PNP625mWSingleSWITCHING200MHz40V50nA40V200MHz400mV200MHz40V5V3015200mA260ns70nsRoHS CompliantContains Lead------------------
-
--TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)---Obsolete----------------------------------Through HoleTO-92-3-55°C~150°C TJTape & Box (TB)1 (Unlimited)2N3903625mWNPN50 @ 10mA 1V300mV @ 5mA, 50mA40V200mA-----
-
--TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)---Obsolete------------------------300MHz---------Through HoleTO-92-3-55°C~150°C TJTape & Reel (TR)1 (Unlimited)2N3904625mWNPN100 @ 10mA 1V300mV @ 5mA, 50mA40V200mA-----
-
--TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-e3yesObsolete3-MATTE TIN----BOTTOMNOT APPLICABLENOT APPLICABLE3O-PBCY-T3COMMERCIAL1---SWITCHING------------260ns70nsROHS3 Compliant-Through Hole--55°C~150°C TJTape & Reel (TR)1 (Unlimited)-625mWPNP50 @ 10mA 1V400mV @ 5mA, 50mA40V200mANOSILICONunknownSINGLEPNP
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