ON Semiconductor 2N3904ZL1G

Name: 2N3904ZL1G
Brand: ON Semiconductor
SKU: 2469355-2N3904ZL1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2N3904ZL1G

Manufacturer:: ON Semiconductor

Ventron No:: 2469355-2N3904ZL1G

Description:: TRANS NPN 40V 0.2A TO-92

ECAD Model:

Datasheet:: 2N3904ZL1G

Specifications

ON Semiconductor 2N3904ZL1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N3904ZL1G.

Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package
TO-92-3
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Box (TB)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
625mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA 1V
Vce Saturation (Max) @ Ib, Ic
300mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
40V
Current - Collector (Ic) (Max)
200mA
Frequency - Transition
300MHz
RoHS Status
ROHS3 Compliant

Description

2N3904ZL1G Overview
DC current gain in this device equals 100 @ 10mA 1V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 5mA, 50mA.Product comes in TO-92-3 supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

2N3904ZL1G Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 300mV @ 5mA, 50mA
the supplier device package of TO-92-3

2N3904ZL1G Applications
There are a lot of Rochester Electronics, LLC
2N3904ZL1G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

2N3904ZL1G More Descriptions

NPN Bipolar Transistor, TO-92 40 V, 0.2 A
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Tape & Box (TB) Through Hole NPN Single Bipolar (BJT) Transistor 100 @ 10mA 1V 200mA 625mW 300MHz
Trans GP BJT NPN 40V 0.2A 3-Pin TO-92 Ammo
TRANSISTOR, NPN, TO-92; Transistor Type:Bipolar; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:40V; Current Ic Continuous a Max:0.2A; Voltage, Vce Sat Max:0.2V; Power Dissipation:625mW; Min Hfe:100; ft, Typ:300MHz; ;RoHS Compliant: Yes
TRANSISTOR, NPN, TO-92; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 250MHz; Power Dissipation Pd: 625mW; DC Collector Current: 200mA; DC Current Gain hFE: 100hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 200mV; Continuous Collector Current Ic Max: 200mA; Current Ic @ Vce Sat: 10mA; Current Ic Continuous a Max: 200mA; Current Ic Fall Time Measurement: 10mA; Current Ic hFE: 10mA; Device Marking: 2N3904; Fall Time @ Ic: 250ns; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 300MHz; Gain Bandwidth ft Typ: 300MHz; Hfe Min: 100; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Pin Configuration: b; Power Dissipation Ptot Max: 500mW; Voltage Vcbo: 60V

Product Comparison

The three parts on the right have similar specifications to 2N3904ZL1G.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Power - Max

Transistor Type

DC Current Gain (hFE) (Min) @ Ic, Vce

Vce Saturation (Max) @ Ib, Ic

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Frequency - Transition

RoHS Status

Base Part Number

Surface Mount

Transistor Element Material

JESD-609 Code

Pbfree Code

Number of Terminations

Terminal Finish

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Transistor Application

Polarity/Channel Type

Turn Off Time-Max (toff)

Turn On Time-Max (ton)

View Compare
2N3904ZL1G

ON Semiconductor

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

-55°C~150°C TJ

Tape & Box (TB)

Obsolete

1 (Unlimited)

625mW

NPN

100 @ 10mA 1V

300mV @ 5mA, 50mA

40V

200mA

300MHz

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
2N3903_D74Z

Fairchild/ON Semiconductor

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

-55°C~150°C TJ

Tape & Box (TB)

Obsolete

1 (Unlimited)

625mW

NPN

50 @ 10mA 1V

300mV @ 5mA, 50mA

40V

200mA

-

-

2N3903

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

2N3904ZL1G vs 2N3903_D74Z
2N3906_J05Z

Fairchild/ON Semiconductor

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

-

-55°C~150°C TJ

Bulk

Obsolete

1 (Unlimited)

625mW

PNP

100 @ 10mA 1V

400mV @ 5mA, 50mA

40V

200mA

250MHz

-

2N3906

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

2N3904ZL1G vs 2N3906_J05Z
2N3905TFR

Fairchild/ON Semiconductor

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

-

-55°C~150°C TJ

Tape & Reel (TR)

Obsolete

1 (Unlimited)

625mW

PNP

50 @ 10mA 1V

400mV @ 5mA, 50mA

40V

200mA

-

ROHS3 Compliant

-

NO

SILICON

e3

yes

3

MATTE TIN

BOTTOM

NOT APPLICABLE

unknown

NOT APPLICABLE

3

O-PBCY-T3

COMMERCIAL

1

SINGLE

SWITCHING

PNP

260ns

70ns

2N3904ZL1G vs 2N3905TFR