Fairchild/ON Semiconductor 2N3904TF
- Part Number:
- 2N3904TF
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2845147-2N3904TF
- Description:
- TRANS NPN 40V 0.2A TO-92
- Datasheet:
- 2N3904TF
Fairchild/ON Semiconductor 2N3904TF technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor 2N3904TF.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time6 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Pins3
- Weight240mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC40V
- Max Power Dissipation625mW
- Terminal PositionBOTTOM
- Current Rating200mA
- Frequency300MHz
- Base Part Number2N3904
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation625mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product300MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA 1V
- Vce Saturation (Max) @ Ib, Ic300mV @ 5mA, 50mA
- Collector Emitter Breakdown Voltage40V
- Transition Frequency300MHz
- Collector Emitter Saturation Voltage200mV
- Max Breakdown Voltage40V
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)6V
- hFE Min100
- Max Junction Temperature (Tj)150°C
- Turn Off Time-Max (toff)250ns
- Turn On Time-Max (ton)70ns
- Height8.77mm
- Length5.2mm
- Width4.19mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2N3904TF Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 10mA 1V DC current gain.As it features a collector emitter saturation voltage of 200mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 300MHz in the part.Single BJT transistor can be broken down at a voltage of 40V volts.When collector current reaches its maximum, it can reach 200mA volts.
2N3904TF Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 300MHz
2N3904TF Applications
There are a lot of ON Semiconductor
2N3904TF applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 10mA 1V DC current gain.As it features a collector emitter saturation voltage of 200mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 300MHz in the part.Single BJT transistor can be broken down at a voltage of 40V volts.When collector current reaches its maximum, it can reach 200mA volts.
2N3904TF Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 300MHz
2N3904TF Applications
There are a lot of ON Semiconductor
2N3904TF applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N3904TF More Descriptions
Transistor General Purpose BJT NPN 40 Volt 0.2 Amp 3-Pin TO-92 Tape And Reel
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
200 mA, 40 V NPN General Purpose Bipolar Junction Transistor
Trans GP BJT NPN 40V 0.2A 625mW 3-Pin TO-92 T/R
2N3904 Series 40 V CE Breakdown 0.2 A NPN General Purpose Amplifier - TO-92
40V 625mW 200mA 100@10mA1V 300MHz 300mV@50mA5mA NPN -55¡Í~ 150¡Í@(Tj) TO-92-3 Bipolar Transistors - BJT ROHS
This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.
TRANSISTOR, BIPOL, NPN, 40V, TO-92-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 625mW; DC Collector Current: 200mA; DC Current Gain hFE: 30hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
200 mA, 40 V NPN General Purpose Bipolar Junction Transistor
Trans GP BJT NPN 40V 0.2A 625mW 3-Pin TO-92 T/R
2N3904 Series 40 V CE Breakdown 0.2 A NPN General Purpose Amplifier - TO-92
40V 625mW 200mA 100@10mA1V 300MHz 300mV@50mA5mA NPN -55¡Í~ 150¡Í@(Tj) TO-92-3 Bipolar Transistors - BJT ROHS
This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.
TRANSISTOR, BIPOL, NPN, 40V, TO-92-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 625mW; DC Collector Current: 200mA; DC Current Gain hFE: 30hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The three parts on the right have similar specifications to 2N3904TF.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionCurrent RatingFrequencyBase Part NumberNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinMax Junction Temperature (Tj)Turn Off Time-Max (toff)Turn On Time-Max (ton)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionSupplier Device PackageSurface MountTerminal FinishPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusConfigurationView Compare
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2N3904TFACTIVE (Last Updated: 3 days ago)6 WeeksTinThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)3240mgSILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99Other Transistors40V625mWBOTTOM200mA300MHz2N39041Single625mWSWITCHING300MHzNPNNPN40V200mA100 @ 10mA 1V300mV @ 5mA, 50mA40V300MHz200mV40V60V6V100150°C250ns70ns8.77mm5.2mm4.19mmNo SVHCNoROHS3 CompliantLead Free---------------
-
----Through HoleTO-226-3, TO-92-3 (TO-226AA)----55°C~150°C TJBulk---Obsolete1 (Unlimited)--------2N3906------PNP--100 @ 10mA 1V400mV @ 5mA, 50mA-----------------625mW40V200mA250MHz----------
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----Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)----55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)--------2N3904------NPN--100 @ 10mA 1V300mV @ 5mA, 50mA-----------------625mW40V200mA300MHzTO-92-3---------
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----Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)--SILICON-55°C~150°C TJTape & Reel (TR)-e3yesObsolete1 (Unlimited)3----BOTTOM---1--SWITCHING-PNPPNP--50 @ 10mA 1V400mV @ 5mA, 50mA--------260ns70ns-----ROHS3 Compliant-625mW40V200mA--NOMATTE TINNOT APPLICABLEunknownNOT APPLICABLE3O-PBCY-T3COMMERCIALSINGLE
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