Fairchild/ON Semiconductor 2N3904TAR
- Part Number:
- 2N3904TAR
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2463153-2N3904TAR
- Description:
- TRANS NPN 40V 0.2A TO-92
- Datasheet:
- 2N3904TAR
Fairchild/ON Semiconductor 2N3904TAR technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor 2N3904TAR.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time6 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Pins3
- Weight240mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Box (TB)
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC40V
- Max Power Dissipation625mW
- Terminal PositionBOTTOM
- Current Rating200mA
- Frequency300MHz
- Base Part Number2N3904
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation625mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product300MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA 1V
- Vce Saturation (Max) @ Ib, Ic300mV @ 5mA, 50mA
- Collector Emitter Breakdown Voltage40V
- Transition Frequency300MHz
- Collector Emitter Saturation Voltage300mV
- Max Breakdown Voltage40V
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)6V
- hFE Min100
- Turn Off Time-Max (toff)250ns
- Turn On Time-Max (ton)70ns
- Height5.33mm
- Length5.2mm
- Width4.19mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2N3904TAR Description
The ON Semiconductor 2N3904TAR is a 200 mA, 40 V NPN General Purpose Bipolar Junction Transistor. The proper dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.
2N3904TAR Features
Pb?Free Packages are Available*
Bi-Polar NPN Transistor
DC Current Gain (hFE) is 300 maximum
Continuous Collector current (IC) is 200mA
Available in To-92 Package
2N3904TAR Applications
General-purpose amplifier and switch
The ON Semiconductor 2N3904TAR is a 200 mA, 40 V NPN General Purpose Bipolar Junction Transistor. The proper dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.
2N3904TAR Features
Pb?Free Packages are Available*
Bi-Polar NPN Transistor
DC Current Gain (hFE) is 300 maximum
Continuous Collector current (IC) is 200mA
Available in To-92 Package
2N3904TAR Applications
General-purpose amplifier and switch
2N3904TAR More Descriptions
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
2N3904 Series 40 V 0.2 A NPN General Purpose Amplifier - TO-92-3 Ammo
200 mA, 40 V NPN General Purpose Bipolar Junction Transistor
Transistor GP BJT NPN 40V 0.2A 3-Pin TO-92 Ammo - Ammo Pack
TRANSISTOR NPN 40V 200MA TO-92
40V 625mW 200mA 100@10mA1V 300MHz 300mV@50mA5mA NPN -55¡Í~ 150¡Í@(Tj) TO-92-3L Bipolar Transistors - BJT ROHS
Transistor, NPN, 40V, 0.2A, TO-92-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power
This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.
TRANSISTOR, NPN, 40V, 0.2A, TO-92-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 625mW; DC Collector Current: 200mA; DC Current Gain hFE: 30hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
2N3904 Series 40 V 0.2 A NPN General Purpose Amplifier - TO-92-3 Ammo
200 mA, 40 V NPN General Purpose Bipolar Junction Transistor
Transistor GP BJT NPN 40V 0.2A 3-Pin TO-92 Ammo - Ammo Pack
TRANSISTOR NPN 40V 200MA TO-92
40V 625mW 200mA 100@10mA1V 300MHz 300mV@50mA5mA NPN -55¡Í~ 150¡Í@(Tj) TO-92-3L Bipolar Transistors - BJT ROHS
Transistor, NPN, 40V, 0.2A, TO-92-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power
This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.
TRANSISTOR, NPN, 40V, 0.2A, TO-92-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 625mW; DC Collector Current: 200mA; DC Current Gain hFE: 30hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The three parts on the right have similar specifications to 2N3904TAR.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionCurrent RatingFrequencyBase Part NumberNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinTurn Off Time-Max (toff)Turn On Time-Max (ton)HeightLengthWidthRadiation HardeningRoHS StatusLead FreePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Supplier Device PackageFrequency - TransitionView Compare
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2N3904TARACTIVE (Last Updated: 3 days ago)6 WeeksThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)3240mgSILICON-55°C~150°C TJTape & Box (TB)2007e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors40V625mWBOTTOM200mA300MHz2N39041Single625mWSWITCHING300MHzNPNNPN40V200mA100 @ 10mA 1V300mV @ 5mA, 50mA40V300MHz300mV40V60V6V100250ns70ns5.33mm5.2mm4.19mmNoROHS3 CompliantLead Free------
-
---Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)----55°C~150°C TJTape & Box (TB)---Obsolete1 (Unlimited)---------2N3905------PNP--50 @ 10mA 1V400mV @ 5mA, 50mA---------------625mW40V200mA--
-
---Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)----55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)---------2N3904------NPN--100 @ 10mA 1V300mV @ 5mA, 50mA---------------625mW40V200mATO-92-3300MHz
-
---Through HoleTO-226-3, TO-92-3 (TO-226AA)----55°C~150°C TJBulk---Obsolete1 (Unlimited)---------2N3906------PNP--100 @ 10mA 1V400mV @ 5mA, 50mA---------------625mW40V200mA-250MHz
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