ON Semiconductor 2N3904RLRA

Name: 2N3904RLRA
Brand: ON Semiconductor
SKU: 2846499-2N3904RLRA
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2N3904RLRA

Manufacturer:: ON Semiconductor

Ventron No:: 2846499-2N3904RLRA

Description:: TRANS NPN 40V 0.2A TO92

ECAD Model:

Datasheet:: 2N3904RLRA

Specifications

ON Semiconductor 2N3904RLRA technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N3904RLRA.

Lifecycle Status
LAST SHIPMENTS (Last Updated: 5 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2008
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Subcategory
Other Transistors
Voltage - Rated DC
40V
Max Power Dissipation
625mW
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
240
Current Rating
200mA
Frequency
300MHz
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
2N3904
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
625mW
Transistor Application
SWITCHING
Gain Bandwidth Product
300MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 100μA 1V
Current - Collector Cutoff (Max)
50nA
Vce Saturation (Max) @ Ib, Ic
200mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage
40V
Transition Frequency
300MHz
Collector Emitter Saturation Voltage
300mV
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
6V
hFE Min
40
Turn Off Time-Max (toff)
250ns
Turn On Time-Max (ton)
70ns
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead

Description

2N3904RLRA Overview
This device has a DC current gain of 40 @ 100μA 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 300mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 200mA.In this part, there is a transition frequency of 300MHz.The maximum collector current is 200mA volts.

2N3904RLRA Features
the DC current gain for this device is 40 @ 100μA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 200mV @ 1mA, 10mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 300MHz

2N3904RLRA Applications
There are a lot of ON Semiconductor
2N3904RLRA applications of single BJT transistors.

Inverter
Interface
Driver
Muting

2N3904RLRA More Descriptions

Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Trans GP BJT NPN 40V 0.2A 3-Pin TO-92 T/R
Bipolar Transistor; Transistor Polarity:N Channel; Power Dissipation, Pd:0.625W; DC Current Gain Min (hfe):40; C-E Breakdown Voltage:40V; Collector Current:0.2A; DC Current Gain Max (hfe):300; Leaded Process Compatible:No RoHS Compliant: No

Product Comparison

The three parts on the right have similar specifications to 2N3904RLRA.

Image

Part Number

Manufacturer

Lifecycle Status

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Position

Peak Reflow Temperature (Cel)

Current Rating

Frequency

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Element Configuration

Power Dissipation

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Turn Off Time-Max (toff)

Turn On Time-Max (ton)

Radiation Hardening

RoHS Status

Lead Free

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Supplier Device Package

Frequency - Transition

Surface Mount

Reach Compliance Code

JESD-30 Code

Qualification Status

Configuration

View Compare
2N3904RLRA

ON Semiconductor

LAST SHIPMENTS (Last Updated: 5 days ago)

Through Hole

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

3

SILICON

-55°C~150°C TJ

Cut Tape (CT)

2008

e0

no

Obsolete

1 (Unlimited)

3

EAR99

Tin/Lead (Sn/Pb)

Other Transistors

40V

625mW

BOTTOM

240

200mA

300MHz

30

2N3904

3

1

Single

625mW

SWITCHING

300MHz

NPN

NPN

40V

200mA

40 @ 100μA 1V

50nA

200mV @ 1mA, 10mA

40V

300MHz

300mV

60V

6V

40

250ns

70ns

No

Non-RoHS Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-
2N3905TAR

Fairchild/ON Semiconductor

-

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

-

-

-55°C~150°C TJ

Tape & Box (TB)

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

2N3905

-

-

-

-

-

-

-

PNP

-

-

50 @ 10mA 1V

-

400mV @ 5mA, 50mA

-

-

-

-

-

-

-

-

-

-

-

625mW

40V

200mA

-

-

-

-

-

-

-

2N3904RLRA vs 2N3905TAR
2N3904_D81Z

Fairchild/ON Semiconductor

-

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

-

-

-55°C~150°C TJ

Tape & Reel (TR)

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

2N3904

-

-

-

-

-

-

-

NPN

-

-

100 @ 10mA 1V

-

300mV @ 5mA, 50mA

-

-

-

-

-

-

-

-

-

-

-

625mW

40V

200mA

TO-92-3

300MHz

-

-

-

-

-

2N3904RLRA vs 2N3904_D81Z
2N3905TFR

Fairchild/ON Semiconductor

-

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

-

e3

yes

Obsolete

1 (Unlimited)

3

-

MATTE TIN

-

-

-

BOTTOM

NOT APPLICABLE

-

-

NOT APPLICABLE

-

3

1

-

-

SWITCHING

-

PNP

PNP

-

-

50 @ 10mA 1V

-

400mV @ 5mA, 50mA

-

-

-

-

-

-

260ns

70ns

-

ROHS3 Compliant

-

625mW

40V

200mA

-

-

NO

unknown

O-PBCY-T3

COMMERCIAL

SINGLE

2N3904RLRA vs 2N3905TFR