ON Semiconductor 2N3904RL1G

Name: 2N3904RL1G
Brand: ON Semiconductor
SKU: 2469125-2N3904RL1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2N3904RL1G

Manufacturer:: ON Semiconductor

Ventron No:: 2469125-2N3904RL1G

Description:: TRANS NPN 40V 0.2A TO-92

ECAD Model:

Datasheet:: 2N3904RL1G

Specifications

ON Semiconductor 2N3904RL1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N3904RL1G.

Lifecycle Status
LAST SHIPMENTS (Last Updated: 4 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature
EUROPEAN PART NUMBER
Subcategory
Other Transistors
Voltage - Rated DC
40V
Max Power Dissipation
625mW
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
Current Rating
200mA
Frequency
300MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
2N3904
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
625mW
Transistor Application
SWITCHING
Gain Bandwidth Product
300MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA 1V
Vce Saturation (Max) @ Ib, Ic
300mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
40V
Transition Frequency
300MHz
Collector Emitter Saturation Voltage
300mV
Max Breakdown Voltage
40V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
6V
hFE Min
40
Turn Off Time-Max (toff)
250ns
Turn On Time-Max (ton)
70ns
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

2N3904RL1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 1V.With a collector emitter saturation voltage of 300mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 5mA, 50mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 200mA.A transition frequency of 300MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Collector current can be as low as 200mA volts at its maximum.

2N3904RL1G Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 300MHz

2N3904RL1G Applications
There are a lot of ON Semiconductor
2N3904RL1G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

2N3904RL1G More Descriptions

NPN Bipolar Transistor, TO-92 40 V, 0.2 A
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Trans GP BJT NPN 40V 0.2A 3-Pin TO-92 T/R
BIPOLAR TRANSISTOR, NPN, 40V, TO-92; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:40V; Transition Frequency Typ, ft:250MHz; Power Dissipation, Pd:625mW; DC Collector Current:200mA; DC Current Gain Max (hfe):100 ;RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to 2N3904RL1G.

Image

Part Number

Manufacturer

Lifecycle Status

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Position

Peak Reflow Temperature (Cel)

Current Rating

Frequency

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Element Configuration

Power Dissipation

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Turn Off Time-Max (toff)

Turn On Time-Max (ton)

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Supplier Device Package

Frequency - Transition

View Compare
2N3904RL1G

ON Semiconductor

LAST SHIPMENTS (Last Updated: 4 days ago)

Through Hole

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2007

e1

yes

Obsolete

1 (Unlimited)

3

EAR99

Tin/Silver/Copper (Sn/Ag/Cu)

EUROPEAN PART NUMBER

Other Transistors

40V

625mW

BOTTOM

260

200mA

300MHz

40

2N3904

3

1

Single

625mW

SWITCHING

300MHz

NPN

NPN

40V

200mA

100 @ 10mA 1V

300mV @ 5mA, 50mA

40V

300MHz

300mV

40V

60V

6V

40

250ns

70ns

No SVHC

No

RoHS Compliant

Lead Free

-

-

-

-

-

-
2N3905TAR

Fairchild/ON Semiconductor

-

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

-

-

-55°C~150°C TJ

Tape & Box (TB)

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

-

2N3905

-

-

-

-

-

-

-

PNP

-

-

50 @ 10mA 1V

400mV @ 5mA, 50mA

-

-

-

-

-

-

-

-

-

-

-

-

-

625mW

40V

200mA

-

-

2N3904RL1G vs 2N3905TAR
2N3903_D74Z

Fairchild/ON Semiconductor

-

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

-

-

-55°C~150°C TJ

Tape & Box (TB)

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

-

2N3903

-

-

-

-

-

-

-

NPN

-

-

50 @ 10mA 1V

300mV @ 5mA, 50mA

-

-

-

-

-

-

-

-

-

-

-

-

-

625mW

40V

200mA

TO-92-3

-

2N3904RL1G vs 2N3903_D74Z
2N3904_D81Z

Fairchild/ON Semiconductor

-

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

-

-

-55°C~150°C TJ

Tape & Reel (TR)

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

-

2N3904

-

-

-

-

-

-

-

NPN

-

-

100 @ 10mA 1V

300mV @ 5mA, 50mA

-

-

-

-

-

-

-

-

-

-

-

-

-

625mW

40V

200mA

TO-92-3

300MHz

2N3904RL1G vs 2N3904_D81Z