ON Semiconductor 2N3904RL1
- Part Number:
- 2N3904RL1
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2846764-2N3904RL1
- Description:
- TRANS NPN 40V 0.2A TO-92
- Datasheet:
- 2N3903, 3904 Datasheet
ON Semiconductor 2N3904RL1 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N3904RL1.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2009
- JESD-609 Codee0
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Additional FeatureEUROPEAN PART NUMBER
- HTS Code8541.21.00.75
- SubcategoryOther Transistors
- Voltage - Rated DC40V
- Max Power Dissipation625mW
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)240
- Reach Compliance Codenot_compliant
- Current Rating200mA
- Time@Peak Reflow Temperature-Max (s)30
- Base Part Number2N3904
- Pin Count3
- JESD-30 CodeO-PBCY-T3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product300MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)300mV
- Max Collector Current200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA 1V
- Vce Saturation (Max) @ Ib, Ic300mV @ 5mA, 50mA
- Collector Emitter Breakdown Voltage40V
- Transition Frequency300MHz
- Collector Emitter Saturation Voltage300mV
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)6V
- hFE Min40
- Turn Off Time-Max (toff)250ns
- Turn On Time-Max (ton)70ns
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
2N3904RL1 Overview
DC current gain in this device equals 100 @ 10mA 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 300mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 5mA, 50mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 200mA current rating.As a result, the part has a transition frequency of 300MHz.In extreme cases, the collector current can be as low as 200mA volts.
2N3904RL1 Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 300MHz
2N3904RL1 Applications
There are a lot of ON Semiconductor
2N3904RL1 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 100 @ 10mA 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 300mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 5mA, 50mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 200mA current rating.As a result, the part has a transition frequency of 300MHz.In extreme cases, the collector current can be as low as 200mA volts.
2N3904RL1 Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 300MHz
2N3904RL1 Applications
There are a lot of ON Semiconductor
2N3904RL1 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N3904RL1 More Descriptions
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Non-Compliant Through Hole 40 NPN Contains Lead TO-92-3 200 mA 40 V
MOSFET NFET S08D 80V 1.4A 245mOHM
Non-Compliant Through Hole 40 NPN Contains Lead TO-92-3 200 mA 40 V
MOSFET NFET S08D 80V 1.4A 245mOHM
The three parts on the right have similar specifications to 2N3904RL1.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsElement ConfigurationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinTurn Off Time-Max (toff)Turn On Time-Max (ton)RoHS StatusLead FreeSupplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionSurface MountPbfree CodeConfigurationView Compare
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2N3904RL1Through HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)SILICON-55°C~150°C TJTape & Reel (TR)2009e0Obsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)EUROPEAN PART NUMBER8541.21.00.75Other Transistors40V625mWBOTTOM240not_compliant200mA302N39043O-PBCY-T3Not Qualified1SingleSWITCHING300MHzNPNNPN300mV200mA100 @ 10mA 1V300mV @ 5mA, 50mA40V300MHz300mV60V6V40250ns70nsNon-RoHS CompliantContains Lead---------
-
-Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)--55°C~150°C TJTape & Box (TB)--Obsolete1 (Unlimited)-------------2N3903--------NPN--50 @ 10mA 1V300mV @ 5mA, 50mA----------TO-92-3625mW40V200mA----
-
-Through HoleTO-226-3, TO-92-3 (TO-226AA)--55°C~150°C TJBulk--Obsolete1 (Unlimited)-------------2N3906--------PNP--100 @ 10mA 1V400mV @ 5mA, 50mA-----------625mW40V200mA250MHz---
-
-Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)SILICON-55°C~150°C TJTape & Reel (TR)-e3Obsolete1 (Unlimited)3-MATTE TIN-----BOTTOMNOT APPLICABLEunknown-NOT APPLICABLE-3O-PBCY-T3COMMERCIAL1-SWITCHING-PNPPNP--50 @ 10mA 1V400mV @ 5mA, 50mA------260ns70nsROHS3 Compliant--625mW40V200mA-NOyesSINGLE
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