ON Semiconductor 2N3904G

Name: 2N3904G
Brand: ON Semiconductor
SKU: 2467981-2N3904G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2N3904G

Manufacturer:: ON Semiconductor

Ventron No:: 2467981-2N3904G

Description:: TRANS NPN 40V 0.2A TO-92

ECAD Model:

Datasheet:: 2N3904G

Specifications

ON Semiconductor 2N3904G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N3904G.

Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
HTS Code
8541.21.00.75
Terminal Position
BOTTOM
JESD-30 Code
O-PBCY-T3
Number of Elements
1
Configuration
SINGLE
Power - Max
625mW
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA 1V
Vce Saturation (Max) @ Ib, Ic
300mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
40V
Current - Collector (Ic) (Max)
200mA
Transition Frequency
300MHz
Frequency - Transition
300MHz
Turn Off Time-Max (toff)
250ns
Turn On Time-Max (ton)
70ns
RoHS Status
ROHS3 Compliant

Description

2N3904G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 10mA 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 5mA, 50mA.The part has a transition frequency of 300MHz.Device displays Collector Emitter Breakdown (40V maximal voltage).

2N3904G Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 300mV @ 5mA, 50mA
a transition frequency of 300MHz

2N3904G Applications
There are a lot of Rochester Electronics, LLC
2N3904G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

2N3904G More Descriptions

NPN Bipolar Transistor, TO-92 40 V, 0.2 A
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Transistor, Bipolar,Si,NPN,General Purpose,VCEO 40VDC,IC 200mA,PD 1.5W,TO-92 | ON Semiconductor 2N3904G
Trans GP BJT NPN 40V 0.2A 3-Pin TO-92 Bulk
Bulk Through Hole General Purpose Single Bipolar (BJT) Transistor 100 @ 10mA 1V 200mA 625mW 300MHz
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:40V; Collector Emitter Saturation Voltage, Vce(sat):0.3V; Power Dissipation, Pd:0.625W; DC Current Gain Min (hfe):100; Package/Case:TO-92 ;RoHS Compliant: Yes
TRANSISTOR, NPN, TO-92; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 625mW; DC Collector Current: 200mA; DC Current Gain hFE: 250hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 200mV; Current Ic Continuous a Max: 50mA; Current Ic hFE: 300mA; Gain Bandwidth ft Typ: 300MHz; Hfe Min: 40; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Through Hole

Product Comparison

The three parts on the right have similar specifications to 2N3904G.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

HTS Code

Terminal Position

JESD-30 Code

Number of Elements

Configuration

Power - Max

Polarity/Channel Type

Transistor Type

DC Current Gain (hFE) (Min) @ Ic, Vce

Vce Saturation (Max) @ Ib, Ic

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Transition Frequency

Frequency - Transition

Turn Off Time-Max (toff)

Turn On Time-Max (ton)

RoHS Status

Supplier Device Package

Base Part Number

JESD-609 Code

Pbfree Code

Terminal Finish

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

Transistor Application

View Compare
2N3904G

ON Semiconductor

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

NO

SILICON

-55°C~150°C TJ

Bulk

Obsolete

1 (Unlimited)

3

EAR99

8541.21.00.75

BOTTOM

O-PBCY-T3

1

SINGLE

625mW

NPN

NPN

100 @ 10mA 1V

300mV @ 5mA, 50mA

40V

200mA

300MHz

300MHz

250ns

70ns

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-
2N3904_D28Z

Fairchild/ON Semiconductor

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

-

-

-55°C~150°C TJ

Tape & Reel (TR)

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

625mW

-

NPN

100 @ 10mA 1V

300mV @ 5mA, 50mA

40V

200mA

-

300MHz

-

-

-

TO-92-3

2N3904

-

-

-

-

-

-

-

-

-

2N3904G vs 2N3904_D28Z
2N3904_D81Z

Fairchild/ON Semiconductor

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

-

-

-55°C~150°C TJ

Tape & Reel (TR)

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

625mW

-

NPN

100 @ 10mA 1V

300mV @ 5mA, 50mA

40V

200mA

-

300MHz

-

-

-

TO-92-3

2N3904

-

-

-

-

-

-

-

-

-

2N3904G vs 2N3904_D81Z
2N3905TFR

Fairchild/ON Semiconductor

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

NO

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

Obsolete

1 (Unlimited)

3

-

-

BOTTOM

O-PBCY-T3

1

SINGLE

625mW

PNP

PNP

50 @ 10mA 1V

400mV @ 5mA, 50mA

40V

200mA

-

-

260ns

70ns

ROHS3 Compliant

-

-

e3

yes

MATTE TIN

NOT APPLICABLE

unknown

NOT APPLICABLE

3

COMMERCIAL

SWITCHING

2N3904G vs 2N3905TFR