ON Semiconductor 2N3903RLRM
- Part Number:
- 2N3903RLRM
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2846857-2N3903RLRM
- Description:
- TRANS NPN 40V 0.2A TO-92
- Datasheet:
- 2N3903RLRM
ON Semiconductor 2N3903RLRM technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N3903RLRM.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Box (TB)
- Published2007
- JESD-609 Codee0
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- HTS Code8541.21.00.75
- SubcategoryOther Transistors
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)240
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)30
- Base Part Number2N3903
- Pin Count3
- JESD-30 CodeO-PBCY-T3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Power - Max625mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 10mA 1V
- Vce Saturation (Max) @ Ib, Ic300mV @ 5mA, 50mA
- Voltage - Collector Emitter Breakdown (Max)40V
- Current - Collector (Ic) (Max)200mA
- Transition Frequency250MHz
- Frequency - Transition250MHz
- Power Dissipation-Max (Abs)0.35W
- Turn Off Time-Max (toff)225ns
- Turn On Time-Max (ton)70ns
- RoHS StatusNon-RoHS Compliant
2N3903RLRM Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 50 @ 10mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 5mA, 50mA.A transition frequency of 250MHz is present in the part.A 40V maximal voltage - Collector Emitter Breakdown is present in the device.
2N3903RLRM Features
the DC current gain for this device is 50 @ 10mA 1V
the vce saturation(Max) is 300mV @ 5mA, 50mA
a transition frequency of 250MHz
2N3903RLRM Applications
There are a lot of ON Semiconductor
2N3903RLRM applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 50 @ 10mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 5mA, 50mA.A transition frequency of 250MHz is present in the part.A 40V maximal voltage - Collector Emitter Breakdown is present in the device.
2N3903RLRM Features
the DC current gain for this device is 50 @ 10mA 1V
the vce saturation(Max) is 300mV @ 5mA, 50mA
a transition frequency of 250MHz
2N3903RLRM Applications
There are a lot of ON Semiconductor
2N3903RLRM applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N3903RLRM More Descriptions
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
TRANS NPN 40V 0.2A TO-92
MOSFET 20V 5.2A Complementary
TRANS NPN 40V 0.2A TO-92
MOSFET 20V 5.2A Complementary
The three parts on the right have similar specifications to 2N3903RLRM.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceVce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionPower Dissipation-Max (Abs)Turn Off Time-Max (toff)Turn On Time-Max (ton)RoHS StatusSupplier Device PackageView Compare
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2N3903RLRMThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)NOSILICON-55°C~150°C TJTape & Box (TB)2007e0Obsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)8541.21.00.75Other TransistorsBOTTOM240not_compliant302N39033O-PBCY-T3Not Qualified1SINGLE625mWSWITCHINGNPNNPN50 @ 10mA 1V300mV @ 5mA, 50mA40V200mA250MHz250MHz0.35W225ns70nsNon-RoHS Compliant--
-
Through HoleTO-226-3, TO-92-3 (TO-226AA)---55°C~150°C TJBulk--Obsolete1 (Unlimited)---------2N3906-----625mW--PNP100 @ 10mA 1V400mV @ 5mA, 50mA40V200mA-250MHz-----
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)---55°C~150°C TJTape & Reel (TR)--Obsolete1 (Unlimited)---------2N3904-----625mW--NPN100 @ 10mA 1V300mV @ 5mA, 50mA40V200mA-300MHz----TO-92-3
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)---55°C~150°C TJTape & Reel (TR)--Obsolete1 (Unlimited)---------2N3904-----625mW--NPN100 @ 10mA 1V300mV @ 5mA, 50mA40V200mA-300MHz----TO-92-3
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