Central Semiconductor Corp 2N3903
- Part Number:
- 2N3903
- Manufacturer:
- Central Semiconductor Corp
- Ventron No:
- 2463221-2N3903
- Description:
- TRANS NPN 40V TO-92
- Datasheet:
- 2N3903
Central Semiconductor Corp 2N3903 technical specifications, attributes, parameters and parts with similar specifications to Central Semiconductor Corp 2N3903.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTIN LEAD
- HTS Code8541.21.00.75
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeO-PBCY-T3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Power - Max625mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 10mA 1V
- Vce Saturation (Max) @ Ib, Ic300mV @ 5mA, 50mA
- Voltage - Collector Emitter Breakdown (Max)40V
- Current - Collector (Ic) (Max)200mA
- Transition Frequency250MHz
- Turn Off Time-Max (toff)225ns
- Turn On Time-Max (ton)70ns
- RoHS StatusROHS3 Compliant
2N3903 Overview
This device has a DC current gain of 50 @ 10mA 1V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 300mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 250MHz.Collector Emitter Breakdown occurs at 40VV - Maximum voltage.
2N3903 Features
the DC current gain for this device is 50 @ 10mA 1V
the vce saturation(Max) is 300mV @ 5mA, 50mA
a transition frequency of 250MHz
2N3903 Applications
There are a lot of Rochester Electronics, LLC
2N3903 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 50 @ 10mA 1V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 300mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 250MHz.Collector Emitter Breakdown occurs at 40VV - Maximum voltage.
2N3903 Features
the DC current gain for this device is 50 @ 10mA 1V
the vce saturation(Max) is 300mV @ 5mA, 50mA
a transition frequency of 250MHz
2N3903 Applications
There are a lot of Rochester Electronics, LLC
2N3903 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N3903 More Descriptions
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 50 @ 10mA 1V 200mA 625mW 60V
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Trans GP BJT NPN 40V 0.2A 3-Pin TO-92 Bulk
TRANSISTOR, N CH 100MA TO-92; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: -; Power Dissipation Pd: 625mW; DC Collector Current: 200mA; DC Current Gain hFE: 150hFE; RF Transistor
RF Bipolar Transistor; Transistor Polarity:N Channel; Package/Case:TO-92; Power Dissipation, Pd:0.625W; DC Current Gain Min (hfe):15; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; C-E Breakdown Voltage:40V ;RoHS Compliant: Yes
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Trans GP BJT NPN 40V 0.2A 3-Pin TO-92 Bulk
TRANSISTOR, N CH 100MA TO-92; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: -; Power Dissipation Pd: 625mW; DC Collector Current: 200mA; DC Current Gain hFE: 150hFE; RF Transistor
RF Bipolar Transistor; Transistor Polarity:N Channel; Package/Case:TO-92; Power Dissipation, Pd:0.625W; DC Current Gain Min (hfe):15; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; C-E Breakdown Voltage:40V ;RoHS Compliant: Yes
The three parts on the right have similar specifications to 2N3903.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceVce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyTurn Off Time-Max (toff)Turn On Time-Max (ton)RoHS StatusBase Part NumberFrequency - TransitionSupplier Device PackageView Compare
-
2N3903Through HoleTO-226-3, TO-92-3 (TO-226AA)NOSILICON-55°C~150°C TJBulke0noObsolete1 (Unlimited)3EAR99TIN LEAD8541.21.00.75BOTTOMNOT SPECIFIEDunknownNOT SPECIFIED3O-PBCY-T3Not Qualified1SINGLE625mWSWITCHINGNPNNPN50 @ 10mA 1V300mV @ 5mA, 50mA40V200mA250MHz225ns70nsROHS3 Compliant----
-
Through HoleTO-226-3, TO-92-3 (TO-226AA)---55°C~150°C TJBulk--Obsolete1 (Unlimited)-------------625mW--PNP100 @ 10mA 1V400mV @ 5mA, 50mA40V200mA----2N3906250MHz-
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)---55°C~150°C TJTape & Reel (TR)--Obsolete1 (Unlimited)-------------625mW--NPN100 @ 10mA 1V300mV @ 5mA, 50mA40V200mA----2N3904300MHzTO-92-3
-
Through HoleTO-226-3, TO-92-3 (TO-226AA)---55°C~150°C TJBulk--Obsolete1 (Unlimited)-------------625mW--PNP100 @ 10mA 1V400mV @ 5mA, 50mA40V200mA----2N3906250MHz-
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