Microsemi Corporation 2N3507AU4

Name: 2N3507AU4
Brand: Microsemi Corporation
SKU: 2466438-2N3507AU4
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2N3507AU4

Manufacturer:: Microsemi Corporation

Ventron No:: 2466438-2N3507AU4

Description:: NPN TRANSISTOR

ECAD Model:

Datasheet:: 2N3507AU4

Specifications

Microsemi Corporation 2N3507AU4 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 2N3507AU4.

Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Factory Lead Time
18 Weeks
Mounting Type
Surface Mount
Package / Case
3-SMD, No Lead
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Series
Military, MIL-PRF-19500/349
Published
2007
JESD-609 Code
e4
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
GOLD OVER NICKEL
Additional Feature
HIGH RELIABILITY
HTS Code
8541.29.00.95
Terminal Position
BOTTOM
Pin Count
3
JESD-30 Code
R-CBCC-N3
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
1W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 1.5A 2V
Current - Collector Cutoff (Max)
1μA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 250mA, 2.5A
Voltage - Collector Emitter Breakdown (Max)
50V
Current - Collector (Ic) (Max)
3A
Turn Off Time-Max (toff)
90ns
Turn On Time-Max (ton)
45ns
RoHS Status
Non-RoHS Compliant

Description

2N3507AU4 Overview
This device has a DC current gain of 30 @ 1.5A 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1.5V @ 250mA, 2.5A means Ic has reached its maximum value(saturated).Collector Emitter Breakdown occurs at 50VV - Maximum voltage.

2N3507AU4 Features
the DC current gain for this device is 30 @ 1.5A 2V
the vce saturation(Max) is 1.5V @ 250mA, 2.5A

2N3507AU4 Applications
There are a lot of Microsemi Corporation
2N3507AU4 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

2N3507AU4 More Descriptions

Trans GP BJT NPN 50V 3A 3-Pin Case U4 Tray
Power Bjt U4 Rohs Compliant: Yes |Microchip 2N3507AU4
3A I(C) 50V V(BR)CEO 1-Element NPN Silicon
Production (Last Updated: 2 months ago)

Certification