Microsemi Corporation 2N3499L
- Part Number:
- 2N3499L
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2466194-2N3499L
- Description:
- TRANS NPN 100V 0.5A TO5
- Datasheet:
- 2N3499L
Microsemi Corporation 2N3499L technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 2N3499L.
- Lifecycle StatusIN PRODUCTION (Last Updated: 1 month ago)
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-205AA, TO-5-3 Metal Can
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- Published2007
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTIN LEAD
- HTS Code8541.29.00.95
- SubcategoryOther Transistors
- Max Power Dissipation1W
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Number of Elements1
- ConfigurationSINGLE
- Power - Max1W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Current - Collector Cutoff (Max)10μA ICBO
- Vce Saturation (Max) @ Ib, Ic1.4V @ 30mA, 300mA
- Collector Base Voltage (VCBO)100V
- Turn Off Time-Max (toff)1150ns
- Turn On Time-Max (ton)115ns
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
2N3499L Overview
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1.4V @ 30mA, 300mA means Ic has reached its maximum value(saturated).A maximum collector current of 500mA volts is possible.
2N3499L Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.4V @ 30mA, 300mA
2N3499L Applications
There are a lot of Microsemi Corporation
2N3499L applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1.4V @ 30mA, 300mA means Ic has reached its maximum value(saturated).A maximum collector current of 500mA volts is possible.
2N3499L Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.4V @ 30mA, 300mA
2N3499L Applications
There are a lot of Microsemi Corporation
2N3499L applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N3499L More Descriptions
Trans GP BJT NPN 100V 0.5A 3-Pin TO-5
Compliant Through Hole Bulk 3 Production (Last Updated: 1 month ago) No 500 mA 1 W
Small-Signal BJT _ TO-5
Compliant Through Hole Bulk 3 Production (Last Updated: 1 month ago) No 500 mA 1 W
Small-Signal BJT _ TO-5
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