Central Semiconductor Corp 2N3416
- Part Number:
- 2N3416
- Manufacturer:
- Central Semiconductor Corp
- Ventron No:
- 2463502-2N3416
- Description:
- TRANS NPN 50V TO-92
- Datasheet:
- 2N3416, 2N3417
Central Semiconductor Corp 2N3416 technical specifications, attributes, parameters and parts with similar specifications to Central Semiconductor Corp 2N3416.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Supplier Device PackageTO-92-3
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- Published1998
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Base Part Number2N3416
- Power - Max625mW
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce75 @ 2mA 4.5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic300mV @ 3mA, 50mA
- Voltage - Collector Emitter Breakdown (Max)50V
- Current - Collector (Ic) (Max)500mA
2N3416 Overview
In this device, the DC current gain is 75 @ 2mA 4.5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 3mA, 50mA.Product comes in the supplier's device package TO-92-3.There is a 50V maximal voltage in the device due to collector-emitter breakdown.
2N3416 Features
the DC current gain for this device is 75 @ 2mA 4.5V
the vce saturation(Max) is 300mV @ 3mA, 50mA
the supplier device package of TO-92-3
2N3416 Applications
There are a lot of ON Semiconductor
2N3416 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 75 @ 2mA 4.5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 3mA, 50mA.Product comes in the supplier's device package TO-92-3.There is a 50V maximal voltage in the device due to collector-emitter breakdown.
2N3416 Features
the DC current gain for this device is 75 @ 2mA 4.5V
the vce saturation(Max) is 300mV @ 3mA, 50mA
the supplier device package of TO-92-3
2N3416 Applications
There are a lot of ON Semiconductor
2N3416 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N3416 More Descriptions
Bipolar Transistor NPN Amplifier/Switch 50V 500mA 3-Pin TO-92 Through Hole Box
50 V 500 mA 625 mW NPN Through Hole Silicon Transistor - TO-92
TRANS NPN 50V TO92-3
50 V 500 mA 625 mW NPN Through Hole Silicon Transistor - TO-92
TRANS NPN 50V TO92-3
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