Fairchild/ON Semiconductor 2N3390
- Part Number:
- 2N3390
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3585447-2N3390
- Description:
- TRANS NPN 25V 0.5A TO-92
- Datasheet:
- 2N3390/91/91A/92/93
Fairchild/ON Semiconductor 2N3390 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor 2N3390.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Supplier Device PackageTO-92-3
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Base Part Number2N3390
- Power - Max625mW
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce400 @ 2mA 4.5V
- Current - Collector Cutoff (Max)100nA ICBO
- Voltage - Collector Emitter Breakdown (Max)25V
- Current - Collector (Ic) (Max)500mA
2N3390 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 400 @ 2mA 4.5V.This product comes in a TO-92-3 device package from the supplier.Device displays Collector Emitter Breakdown (25V maximal voltage).
2N3390 Features
the DC current gain for this device is 400 @ 2mA 4.5V
the supplier device package of TO-92-3
2N3390 Applications
There are a lot of ON Semiconductor
2N3390 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 400 @ 2mA 4.5V.This product comes in a TO-92-3 device package from the supplier.Device displays Collector Emitter Breakdown (25V maximal voltage).
2N3390 Features
the DC current gain for this device is 400 @ 2mA 4.5V
the supplier device package of TO-92-3
2N3390 Applications
There are a lot of ON Semiconductor
2N3390 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The three parts on the right have similar specifications to 2N3390.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Base Part NumberPower - MaxTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Voltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)MountNumber of PinsPublishedMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCMax Power DissipationCurrent RatingNumber of ElementsPolarityElement ConfigurationPower DissipationCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRoHS StatusLead FreeFactory Lead TimeJESD-609 CodeTerminal FinishSubcategoryConfigurationPolarity/Channel TypePower Dissipation-Max (Abs)DC Current Gain-Min (hFE)Radiation HardeningView Compare
-
2N3390Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92-3-55°C~150°C TJBulkObsolete1 (Unlimited)2N3390625mWNPN400 @ 2mA 4.5V100nA ICBO25V500mA------------------------------
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)--55°C~150°C TJTape & Box (TB)Obsolete1 (Unlimited)2N3390625mWNPN400 @ 2mA 4.5V100nA ICBO25V500mA-----------------------------
-
Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92-3-55°C~150°C TJBulkObsolete1 (Unlimited)2N3393625mWNPN90 @ 2mA 4.5V100nA ICBO25V500mAThrough Hole31998150°C-55°C25V625mW500mA1NPNSingle625mW25V500mA25V25V5V90RoHS CompliantLead Free---------
-
Through HoleTO-205AA, TO-5-3 Metal Can--BulkActive1 (Unlimited)-------Through Hole32007125°C-55°C-------------Non-RoHS Compliant-12 Weekse0Tin/Lead (Sn/Pb)Other TransistorsSingleNPN0.5W15No
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