ON Semiconductor 2N3055H

Name: 2N3055H
Brand: ON Semiconductor
SKU: 2846809-2N3055H
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2N3055H

Manufacturer:: ON Semiconductor

Ventron No:: 2846809-2N3055H

Description:: TRANS NPN 60V 15A TO-3

ECAD Model:

Datasheet:: 2N3055, MJ2955

Specifications

ON Semiconductor 2N3055H technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N3055H.

Lifecycle Status
LAST SHIPMENTS (Last Updated: 2 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-204AA, TO-3
Number of Pins
2
Supplier Device Package
TO-204 (TO-3)
Operating Temperature
-65°C~200°C TJ
Packaging
Tray
Published
2004
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Voltage - Rated DC
60V
Max Power Dissipation
115W
Current Rating
15A
Base Part Number
2N3055
Polarity
NPN
Element Configuration
Single
Power Dissipation
115W
Power - Max
115W
Gain Bandwidth Product
2.5MHz
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
3V
Max Collector Current
15A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 4A 4V
Current - Collector Cutoff (Max)
700μA
Vce Saturation (Max) @ Ib, Ic
3V @ 3.3A, 10A
Collector Emitter Breakdown Voltage
60V
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
15A
Collector Emitter Saturation Voltage
1.1V
Frequency - Transition
2.5MHz
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
7V
hFE Min
20
REACH SVHC
No SVHC
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead

Description

2N3055H Overview
In this device, the DC current gain is 20 @ 4A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1.1V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 3.3A, 10A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (15A).Supplier device package TO-204 (TO-3) comes with the product.The device exhibits a collector-emitter breakdown at 60V.Maximum collector currents can be below 15A volts.

2N3055H Features
the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 3V @ 3.3A, 10A
the emitter base voltage is kept at 7V
the current rating of this device is 15A
the supplier device package of TO-204 (TO-3)

2N3055H Applications
There are a lot of ON Semiconductor
2N3055H applications of single BJT transistors.

Inverter
Interface
Driver
Muting

2N3055H More Descriptions

Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin
Transistor GP BJT NPN 60V 15A 2-Pin TO-3Avnet Japan
Bipolar Transistor, Npn, 60V; Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:60V; Transition Frequency Ft:800Khz; Power Dissipation Pd:115W; Dc Collector Current:15A; Dc Current Gain Hfe:20Hfe; No. Of Pins:2Pins; Msl:- Rohs Compliant: Yes
TRANSISTOR, NPN, TO-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 800kHz; Power Dissipation Pd: 115W; DC Collector Current: 15A; DC Current Gain hFE: 20hFE; Transistor Case Style: TO-3; No. of Pins: 2Pins; Operating Temperature Max: 200°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Av Current Ic: 15A; Continuous Collector Current Ic Max: 15A; Current Ic Continuous a Max: 15A; Current Ic hFE: 4A; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 800kHz; Gain Bandwidth ft Typ: 800kHz; Hfe Min: 20; No. of Transistors: 1; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 200°C; Power Dissipation Ptot Max: 115W; Termination Type: Through Hole; Voltage Vcbo: 100V

Certification