Microsemi Corporation 2N2906AUB
- Part Number:
- 2N2906AUB
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2466849-2N2906AUB
- Description:
- TRANS PNP 60V 0.6A
- Datasheet:
- 2N2906AUB
Microsemi Corporation 2N2906AUB technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 2N2906AUB.
- Lifecycle StatusIN PRODUCTION (Last Updated: 2 weeks ago)
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case3-SMD, No Lead
- Number of Pins3
- Supplier Device PackageUB
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- Published2002
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature200°C
- Min Operating Temperature-65°C
- Max Power Dissipation500mW
- Number of Elements1
- PolarityPNP
- Power Dissipation500mW
- Power - Max500mW
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA 10V
- Current - Collector Cutoff (Max)50nA
- Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
- Collector Emitter Breakdown Voltage60V
- Voltage - Collector Emitter Breakdown (Max)60V
- Current - Collector (Ic) (Max)600mA
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)5V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
2N2906AUB Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 150mA 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is no device package available from the supplier for this product.Single BJT transistor shows a 60V maximal voltage - Collector EmSingle BJT transistorter Breakdown.When collector current reaches its maximum, it can reach 600mA volts.
2N2906AUB Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the supplier device package of UB
2N2906AUB Applications
There are a lot of Microsemi Corporation
2N2906AUB applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 150mA 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is no device package available from the supplier for this product.Single BJT transistor shows a 60V maximal voltage - Collector EmSingle BJT transistorter Breakdown.When collector current reaches its maximum, it can reach 600mA volts.
2N2906AUB Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the supplier device package of UB
2N2906AUB Applications
There are a lot of Microsemi Corporation
2N2906AUB applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N2906AUB More Descriptions
Trans GP BJT PNP 60V 0.6A 3-Pin UB
Small-Signal BJT _ UB
Small-Signal BJT _ UB
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