2N2906A

Microsemi Corporation 2N2906A

Part Number:
2N2906A
Manufacturer:
Microsemi Corporation
Ventron No:
3553843-2N2906A
Description:
TRANS PNP 60V 0.6A TO-18
ECAD Model:
Datasheet:
2N/FTSO/PN NPN Type (10p)

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Specifications
Microsemi Corporation 2N2906A technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 2N2906A.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package
    TO-18
  • Packaging
    Bulk
  • Published
    2007
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Base Part Number
    2N2906
  • Power - Max
    400mW
  • Transistor Type
    PNP
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    40 @ 150mA 10V
  • Vce Saturation (Max) @ Ib, Ic
    1.6V @ 50mA, 500mA
  • Voltage - Collector Emitter Breakdown (Max)
    40V
  • Current - Collector (Ic) (Max)
    600mA
  • RoHS Status
    Non-RoHS Compliant
Description
2N2906A Overview
This device has a DC current gain of 40 @ 150mA 10V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of TO-18.Detection of Collector Emitter Breakdown at 40V maximal voltage is present.

2N2906A Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the supplier device package of TO-18


2N2906A Applications
There are a lot of ON Semiconductor
2N2906A applications of single BJT transistors.


Inverter
Interface
Driver
Muting
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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