TT Electronics/Optek Technology 2N2222AUA
- Part Number:
- 2N2222AUA
- Manufacturer:
- TT Electronics/Optek Technology
- Ventron No:
- 2462806-2N2222AUA
- Description:
- TRANS NPN 50V 0.8A SMD
- Datasheet:
- 2N2222AUA
TT Electronics/Optek Technology 2N2222AUA technical specifications, attributes, parameters and parts with similar specifications to TT Electronics/Optek Technology 2N2222AUA.
- Lifecycle StatusIN PRODUCTION (Last Updated: 1 month ago)
- Factory Lead Time8 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case4-SMD
- Number of Pins4
- Supplier Device Package4-SMD
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- Series2N2222
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature200°C
- Min Operating Temperature-65°C
- Max Power Dissipation500mW
- Number of Elements1
- PolarityNPN
- Power Dissipation500mW
- Power - Max500mW
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current800mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Current - Collector Cutoff (Max)50nA
- Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
- Collector Emitter Breakdown Voltage50V
- Voltage - Collector Emitter Breakdown (Max)50V
- Current - Collector (Ic) (Max)800mA
- Collector Base Voltage (VCBO)75V
- Emitter Base Voltage (VEBO)6V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
2N2222AUA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 10V.When VCE saturation is 1V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Supplier package 4-SMD contains the product.The device has a 50V maximal voltage - Collector Emitter Breakdown.A maximum collector current of 800mA volts can be achieved.
2N2222AUA Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the supplier device package of 4-SMD
2N2222AUA Applications
There are a lot of Microsemi Corporation
2N2222AUA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 10V.When VCE saturation is 1V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Supplier package 4-SMD contains the product.The device has a 50V maximal voltage - Collector Emitter Breakdown.A maximum collector current of 800mA volts can be achieved.
2N2222AUA Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the supplier device package of 4-SMD
2N2222AUA Applications
There are a lot of Microsemi Corporation
2N2222AUA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N2222AUA More Descriptions
Bipolar Transistors - BJT NPN G.P. Transistor 4 Pin
Surface mount NPN transistor, Voltage - Collector Emitter Breakdown 50V, CLCC-4, RoHSTT Electronics SCT
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Transistor,bjt,npn,40V V(Br)Ceo,800Ma I(C),smt Rohs Compliant: Yes |Tt Electronics/optek Technology 2N2222AUA
Trans GP BJT NPN 50V 0.8A 4-Pin CSMD
Surface mount NPN transistor, Voltage - Collector Emitter Breakdown 50V, CLCC-4, RoHSTT Electronics SCT
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Transistor,bjt,npn,40V V(Br)Ceo,800Ma I(C),smt Rohs Compliant: Yes |Tt Electronics/optek Technology 2N2222AUA
Trans GP BJT NPN 50V 0.8A 4-Pin CSMD
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