Central Semiconductor Corp 2N2222
- Part Number:
- 2N2222
- Manufacturer:
- Central Semiconductor Corp
- Ventron No:
- 2462890-2N2222
- Description:
- TRANS NPN 30V 0.8A TO-18
- ECAD Model:
-
Central Semiconductor Corp 2N2222 technical specifications, attributes, parameters and parts with similar specifications to Central Semiconductor Corp 2N2222.
- Factory Lead Time4 Weeks
- Package / CaseTO-18
- Number of Pins3
- PackagingTray
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- RoHS StatusRoHS Compliant
- Lead FreeContains Lead
2N2222 Overview
2N2222 Features
2N2222 Applications
There are a lot of MICROSS/On Semiconductor
2N2222 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N2222 Features
2N2222 Applications
There are a lot of MICROSS/On Semiconductor
2N2222 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N2222 More Descriptions
Bipolar (Bjt) Single Transistor, Npn, 30 V, 500 Mw, 800 Ma, 100 Rohs Compliant: Yes |Multicomp Pro 2N2222
Small Signal Bipolar Transistor, 0.8A I(C), 1-Element, NPN
Transistor, NPN, 30V, 800MA, TO-18; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency ft:250MHz; Power
TRANSISTOR, NPN, 30V, 800MA, TO-18; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 30V; Transition Frequency ft: 250MHz; Power Dissipation Pd: 500mW; DC Collector Current: 800mA; DC Current Gain hFE: 100hFE; Transistor Case Style: TO-18; No. of Pins: 3Pins; Operating Temperature Max: 200°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 400mV; Continuous Collector Current Ic Max: 800mA; Current Ic @ Vce Sat: 150mA; Current Ic Continuous a Max: 800mA; Current Ic hFE: 150mA; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 250MHz; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 100; No. of Transistors: 1; Operating Temperature Min: -65°C; Pin Configuration: a; Power Dissipation Ptot Max: 500mW; Voltage Vcbo: 60V
Small Signal Bipolar Transistor, 0.8A I(C), 1-Element, NPN
Transistor, NPN, 30V, 800MA, TO-18; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency ft:250MHz; Power
TRANSISTOR, NPN, 30V, 800MA, TO-18; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 30V; Transition Frequency ft: 250MHz; Power Dissipation Pd: 500mW; DC Collector Current: 800mA; DC Current Gain hFE: 100hFE; Transistor Case Style: TO-18; No. of Pins: 3Pins; Operating Temperature Max: 200°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 400mV; Continuous Collector Current Ic Max: 800mA; Current Ic @ Vce Sat: 150mA; Current Ic Continuous a Max: 800mA; Current Ic hFE: 150mA; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 250MHz; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 100; No. of Transistors: 1; Operating Temperature Min: -65°C; Pin Configuration: a; Power Dissipation Ptot Max: 500mW; Voltage Vcbo: 60V
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