2N1613

Central Semiconductor Corp 2N1613

Part Number:
2N1613
Manufacturer:
Central Semiconductor Corp
Ventron No:
2845755-2N1613
Description:
TRANS NPN 50V 0.5A TO-39
ECAD Model:
Datasheet:
2N1613, 2N1711

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Specifications
Central Semiconductor Corp 2N1613 technical specifications, attributes, parameters and parts with similar specifications to Central Semiconductor Corp 2N1613.
  • Factory Lead Time
    8 Weeks
  • Mount
    Through Hole
  • Package / Case
    TO-39
  • Packaging
    Bulk
  • Published
    2012
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Active
  • Number of Terminations
    3
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -65°C
  • HTS Code
    8541.21.00.95
  • Subcategory
    Other Transistors
  • Terminal Position
    BOTTOM
  • Terminal Form
    WIRE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    O-MBCY-W3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Polarity
    NPN
  • Power Dissipation-Max
    3W
  • Element Configuration
    Single
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    60MHz
  • Collector Emitter Voltage (VCEO)
    1.5V
  • Max Collector Current
    500mA
  • Collector Emitter Breakdown Voltage
    50V
  • Transition Frequency
    60MHz
  • Collector Emitter Saturation Voltage
    1.5V
  • Frequency - Transition
    60MHz
  • Collector Base Voltage (VCBO)
    75V
  • Emitter Base Voltage (VEBO)
    7V
  • hFE Min
    40
  • DC Current Gain-Min (hFE)
    20
  • Continuous Collector Current
    500mA
  • RoHS Status
    RoHS Compliant
Description
2N1613 Overview
This design offers maximum flexibility with a collector emitter saturation voltage of 1.5V.Continuous collector voltages should be kept at 500mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.As you can see, the part has a transition frequency of 60MHz.A maximum collector current of 500mA volts is possible.

2N1613 Features
a collector emitter saturation voltage of 1.5V
the emitter base voltage is kept at 7V
a transition frequency of 60MHz


2N1613 Applications
There are a lot of Central Semiconductor
2N1613 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
2N1613 More Descriptions
Trans GP BJT NPN 30V 0.5A 800mW 3-Pin TO-39 Bag
Power Bjt To-39 Rohs Compliant: Yes |Microchip 2N1613
TRANS NPN 30V 0.5A TO39
Power BJT _ TO-39
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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