Central Semiconductor Corp 2N1613
- Part Number:
- 2N1613
- Manufacturer:
- Central Semiconductor Corp
- Ventron No:
- 2845755-2N1613
- Description:
- TRANS NPN 50V 0.5A TO-39
- Datasheet:
- 2N1613, 2N1711
Central Semiconductor Corp 2N1613 technical specifications, attributes, parameters and parts with similar specifications to Central Semiconductor Corp 2N1613.
- Factory Lead Time8 Weeks
- MountThrough Hole
- Package / CaseTO-39
- PackagingBulk
- Published2012
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Number of Terminations3
- Terminal FinishTin/Lead (Sn/Pb)
- Max Operating Temperature150°C
- Min Operating Temperature-65°C
- HTS Code8541.21.00.95
- SubcategoryOther Transistors
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeO-MBCY-W3
- Qualification StatusNot Qualified
- Number of Elements1
- PolarityNPN
- Power Dissipation-Max3W
- Element ConfigurationSingle
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product60MHz
- Collector Emitter Voltage (VCEO)1.5V
- Max Collector Current500mA
- Collector Emitter Breakdown Voltage50V
- Transition Frequency60MHz
- Collector Emitter Saturation Voltage1.5V
- Frequency - Transition60MHz
- Collector Base Voltage (VCBO)75V
- Emitter Base Voltage (VEBO)7V
- hFE Min40
- DC Current Gain-Min (hFE)20
- Continuous Collector Current500mA
- RoHS StatusRoHS Compliant
2N1613 Overview
This design offers maximum flexibility with a collector emitter saturation voltage of 1.5V.Continuous collector voltages should be kept at 500mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.As you can see, the part has a transition frequency of 60MHz.A maximum collector current of 500mA volts is possible.
2N1613 Features
a collector emitter saturation voltage of 1.5V
the emitter base voltage is kept at 7V
a transition frequency of 60MHz
2N1613 Applications
There are a lot of Central Semiconductor
2N1613 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This design offers maximum flexibility with a collector emitter saturation voltage of 1.5V.Continuous collector voltages should be kept at 500mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.As you can see, the part has a transition frequency of 60MHz.A maximum collector current of 500mA volts is possible.
2N1613 Features
a collector emitter saturation voltage of 1.5V
the emitter base voltage is kept at 7V
a transition frequency of 60MHz
2N1613 Applications
There are a lot of Central Semiconductor
2N1613 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N1613 More Descriptions
Trans GP BJT NPN 30V 0.5A 800mW 3-Pin TO-39 Bag
Power Bjt To-39 Rohs Compliant: Yes |Microchip 2N1613
TRANS NPN 30V 0.5A TO39
Power BJT _ TO-39
Power Bjt To-39 Rohs Compliant: Yes |Microchip 2N1613
TRANS NPN 30V 0.5A TO39
Power BJT _ TO-39
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