Part Number: STGP35HF60W vs STGP10M65DF2

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Part Number: STGP35HF60W STGP10M65DF2
Manufacturer: STMicroelectronics STMicroelectronics
Description: IGBT 600V 60A 200W TO220 IGBT 650V 10A TO-220AB
Quantity Available: Available Available
Datasheets: - -
Lifecycle Status ACTIVE (Last Updated: 7 months ago) ACTIVE (Last Updated: 7 months ago)
Factory Lead Time 8 Weeks 30 Weeks
Mount Through Hole Through Hole
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 TO-220-3
Operating Temperature -55°C~150°C TJ -55°C~175°C TJ
Packaging Tube Tube
Part Status Active Active
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
ECCN Code EAR99 EAR99
Subcategory Insulated Gate BIP Transistors -
Max Power Dissipation 200W 115W
Base Part Number STGP35 STGP10
Element Configuration Single Single
Power Dissipation 200W -
Input Type Standard Standard
Polarity/Channel Type N-CHANNEL -
Collector Emitter Voltage (VCEO) 600V 2V
Max Collector Current 60A 20A
Collector Emitter Breakdown Voltage 600V 650V
Collector Emitter Saturation Voltage 1.65V 1.55V
Test Condition 400V, 20A, 10 Ω, 15V 400V, 10A, 22 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 20A 2V @ 15V, 10A
Gate Charge 140nC 28nC
Current - Collector Pulsed (Icm) 150A 40A
Td (on/off) @ 25°C 30ns/175ns 19ns/91ns
Switching Energy 290μJ (on), 185μJ (off) 120μJ (on), 270μJ (off)
Gate-Emitter Voltage-Max 20V -
Gate-Emitter Thr Voltage-Max 5.75V -
Radiation Hardening No -
RoHS Status ROHS3 Compliant ROHS3 Compliant
Lead Free Lead Free -
Number of Pins - 3
Peak Reflow Temperature (Cel) - NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) - NOT SPECIFIED
Power - Max - 115W
Reverse Recovery Time - 96 ns
IGBT Type - Trench Field Stop
REACH SVHC - No SVHC
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