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STGP35HF60W

STMicroelectronics STGP35HF60W

Part Number:
STGP35HF60W
Manufacturer:
STMicroelectronics
Ventron No:
2494294-STGP35HF60W
Description:
IGBT 600V 60A 200W TO220
ECAD Model:
Datasheet:
STGP35HF60W

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Specifications
STMicroelectronics STGP35HF60W technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGP35HF60W.
  • Lifecycle Status
    ACTIVE (Last Updated: 7 months ago)
  • Factory Lead Time
    8 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    200W
  • Base Part Number
    STGP35
  • Element Configuration
    Single
  • Power Dissipation
    200W
  • Input Type
    Standard
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    600V
  • Max Collector Current
    60A
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    1.65V
  • Test Condition
    400V, 20A, 10 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.5V @ 15V, 20A
  • Gate Charge
    140nC
  • Current - Collector Pulsed (Icm)
    150A
  • Td (on/off) @ 25°C
    30ns/175ns
  • Switching Energy
    290μJ (on), 185μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    5.75V
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STGP35HF60W                Description
This Ultrafast IGBT is developed using a new planar technology to yield a device with tighter switching energy variation (Eoff) versus temperature. The suffix "W" denotes a subset of products designed for high switching frequency operation (over 100 kHz).  
STGP35HF60W               Features ■ Improved Eoff at elevated temperature ■ Minimal tail current ■ Low conduction losses
STGP35HF60W               Applications ■ Welding ■ High frequency converters ■ Power factor correction

STGP35HF60W More Descriptions
Trans IGBT Chip N-CH 600V 60A 200000mW 3-Pin(3 Tab) TO-220AB Tube
STGP35HF60W Series 600 V 60 A Flange Mount Ultrafast IGBT - TO-220
Short-circuit rugged IGBT, TO-220, TubeSTMicroelectronics SCT
ANALOG DEVICES - ADUM2401BRWZ - Digital Isolator, Quad, 4 Channel, 50 ns, 2.7 V, 5.5 V, WSOIC, 16 Pins
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel
IGBT Transistors 35A Ultrafast IGBT 600V 100kHz
Igbt |Stmicroelectronics STGP35HF60W
Product Comparison
The three parts on the right have similar specifications to STGP35HF60W.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Subcategory
    Max Power Dissipation
    Base Part Number
    Element Configuration
    Power Dissipation
    Input Type
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Radiation Hardening
    RoHS Status
    Lead Free
    Reverse Recovery Time
    IGBT Type
    Number of Pins
    Weight
    Transistor Element Material
    Series
    JESD-609 Code
    Number of Terminations
    Terminal Finish
    Voltage - Rated DC
    Current Rating
    Pin Count
    Number of Elements
    Turn On Delay Time
    Transistor Application
    Drain to Source Voltage (Vdss)
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Turn On Time
    Continuous Collector Current
    Turn Off Time-Nom (toff)
    Height
    Length
    Width
    REACH SVHC
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Power - Max
    View Compare
  • STGP35HF60W
    STGP35HF60W
    STMicroelectronics
    ACTIVE (Last Updated: 7 months ago)
    8 Weeks
    Through Hole
    Through Hole
    TO-220-3
    -55°C~150°C TJ
    Tube
    Active
    1 (Unlimited)
    EAR99
    Insulated Gate BIP Transistors
    200W
    STGP35
    Single
    200W
    Standard
    N-CHANNEL
    600V
    60A
    600V
    1.65V
    400V, 20A, 10 Ω, 15V
    2.5V @ 15V, 20A
    140nC
    150A
    30ns/175ns
    290μJ (on), 185μJ (off)
    20V
    5.75V
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STGP20V60DF
    STGP20V60DF
    STMicroelectronics
    -
    20 Weeks
    Through Hole
    Through Hole
    TO-220-3
    -55°C~175°C TJ
    Tube
    Active
    1 (Unlimited)
    EAR99
    Insulated Gate BIP Transistors
    167W
    STGP20
    Single
    167W
    Standard
    N-CHANNEL
    600V
    40A
    600V
    2.3V
    400V, 20A, 15V
    2.2V @ 15V, 20A
    116nC
    80A
    38ns/149ns
    200μJ (on), 130μJ (off)
    20V
    -
    No
    ROHS3 Compliant
    -
    40ns
    Trench Field Stop
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    STGP35HF60W vs STGP20V60DF
  • STGP10NB60S
    STGP10NB60S
    STMicroelectronics
    ACTIVE (Last Updated: 8 months ago)
    8 Weeks
    Through Hole
    Through Hole
    TO-220-3
    -55°C~150°C TJ
    Tube
    Active
    1 (Unlimited)
    EAR99
    Insulated Gate BIP Transistors
    80W
    STGP10
    Single
    80W
    Standard
    N-CHANNEL
    600V
    29A
    600V
    1.7V
    480V, 10A, 1k Ω, 15V
    1.75V @ 15V, 10A
    33nC
    80A
    700ns/1.2μs
    600μJ (on), 5mJ (off)
    20V
    5V
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    3
    6.000006g
    SILICON
    PowerMESH™
    e3
    3
    Matte Tin (Sn) - annealed
    600V
    10A
    3
    1
    7 μs
    POWER CONTROL
    600V
    10A
    TO-220AB
    1160 ns
    10A
    3100 ns
    9.15mm
    10.4mm
    4.6mm
    No SVHC
    -
    -
    -
    STGP35HF60W vs STGP10NB60S
  • STGP10M65DF2
    STGP10M65DF2
    STMicroelectronics
    ACTIVE (Last Updated: 7 months ago)
    30 Weeks
    Through Hole
    Through Hole
    TO-220-3
    -55°C~175°C TJ
    Tube
    Active
    1 (Unlimited)
    EAR99
    -
    115W
    STGP10
    Single
    -
    Standard
    -
    2V
    20A
    650V
    1.55V
    400V, 10A, 22 Ω, 15V
    2V @ 15V, 10A
    28nC
    40A
    19ns/91ns
    120μJ (on), 270μJ (off)
    -
    -
    -
    ROHS3 Compliant
    -
    96 ns
    Trench Field Stop
    3
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    No SVHC
    NOT SPECIFIED
    NOT SPECIFIED
    115W
    STGP35HF60W vs STGP10M65DF2
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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