Renesas Electronics America R1RW0416DSB-2PR#D1
- Part Number:
- R1RW0416DSB-2PR#D1
- Manufacturer:
- Renesas Electronics America
- Ventron No:
- 7104507-R1RW0416DSB-2PR#D1
- Description:
- 44 Pin Memory IC 18.41mm mm
- Datasheet:
- R1RW0416DSB-2PR#D1
Renesas Electronics America R1RW0416DSB-2PR#D1 technical specifications, attributes, parameters and parts with similar specifications to Renesas Electronics America R1RW0416DSB-2PR#D1.
- Mounting TypeSurface Mount
- Package / Case44-TSOP (0.400, 10.16mm Width)
- Surface MountYES
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations44
- TechnologyCMOS
- Voltage - Supply3V~3.6V
- Terminal PositionDUAL
- Number of Functions1
- Supply Voltage3.3V
- Terminal Pitch0.8mm
- Pin Count44
- JESD-30 CodeR-PDSO-G44
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)3V
- Memory Size4Mb 256K x 16
- Memory TypeVolatile
- Operating ModeASYNCHRONOUS
- Memory FormatSRAM
- Memory InterfaceParallel
- Organization256KX16
- Memory Width16
- Write Cycle Time - Word, Page12ns
- Memory Density4194304 bit
- Access Time (Max)12 ns
- Height Seated (Max)1.2mm
- Length18.41mm
- Width10.16mm
- RoHS StatusROHS3 Compliant
R1RW0416DSB-2PR#D1 Overview
This product is manufactured by Renesas Electronics America, belongs to the Memory category. It comes in a tray packaging with a Pbfree Code of 'yes'. The product features 44 terminations, a voltage supply range of 3V~3.6V, a dual terminal position, a 3.3V supply voltage, a 0.8mm terminal pitch, and it adheres to the JESD-30 Code (R-PDSO-G44). The memory format used in this product is SRAM, and its width measures 10.16mm.
R1RW0416DSB-2PR#D1 Features
Package / Case: 44-TSOP (0.400, 10.16mm Width)
R1RW0416DSB-2PR#D1 Applications
There are a lot of Renesas Electronics America
R1RW0416DSB-2PR#D1 Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
This product is manufactured by Renesas Electronics America, belongs to the Memory category. It comes in a tray packaging with a Pbfree Code of 'yes'. The product features 44 terminations, a voltage supply range of 3V~3.6V, a dual terminal position, a 3.3V supply voltage, a 0.8mm terminal pitch, and it adheres to the JESD-30 Code (R-PDSO-G44). The memory format used in this product is SRAM, and its width measures 10.16mm.
R1RW0416DSB-2PR#D1 Features
Package / Case: 44-TSOP (0.400, 10.16mm Width)
R1RW0416DSB-2PR#D1 Applications
There are a lot of Renesas Electronics America
R1RW0416DSB-2PR#D1 Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
R1RW0416DSB-2PR#D1 More Descriptions
SRAM Chip Async Single 3.3V 4M-bit 256K x 16 12ns 44-Pin TSOP-II
IC SRAM 4MBIT PARALLEL 44TSOP II
Standard SRAM, 256KX16, 12ns, CMOS, PDSO44
4M High-speed SRAM (256-kword × 16-bit)
Single 3.3 V supply: 3.3 V ± 0.3 V Access time: 10 ns / 12 ns (max) Completely static memory No clock or timing strobe required Equal access and cycle times Directly TTL compatible All inputs and outputs Operating current: 145 / 130mA (max) TTL standby current: 40 mA (max) CMOS standby current : 5 mA (max) : 0.8 mA (max) (L-version) : 0.5 mA (max) (S-version) Data retention current : 0.4 mA (max) (L-version) :0.2 mA (max) (S-version) Data retention voltage: 2.0 V (min) (L-version , S-version) Center VCC and VSS type pin out
IC SRAM 4MBIT PARALLEL 44TSOP II
Standard SRAM, 256KX16, 12ns, CMOS, PDSO44
4M High-speed SRAM (256-kword × 16-bit)
Single 3.3 V supply: 3.3 V ± 0.3 V Access time: 10 ns / 12 ns (max) Completely static memory No clock or timing strobe required Equal access and cycle times Directly TTL compatible All inputs and outputs Operating current: 145 / 130mA (max) TTL standby current: 40 mA (max) CMOS standby current : 5 mA (max) : 0.8 mA (max) (L-version) : 0.5 mA (max) (S-version) Data retention current : 0.4 mA (max) (L-version) :0.2 mA (max) (S-version) Data retention voltage: 2.0 V (min) (L-version , S-version) Center VCC and VSS type pin out
The three parts on the right have similar specifications to R1RW0416DSB-2PR#D1.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchPin CountJESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageMemory DensityAccess Time (Max)Height Seated (Max)LengthWidthRoHS StatusMountNumber of PinsPublishedOperating Supply VoltageNumber of PortsNominal Supply CurrentAddress Bus WidthDensitySync/AsyncWord SizeRadiation HardeningLead FreeView Compare
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R1RW0416DSB-2PR#D1Surface Mount44-TSOP (0.400, 10.16mm Width)YES-40°C~85°C TATrayyesActive3 (168 Hours)44CMOS3V~3.6VDUAL13.3V0.8mm44R-PDSO-G443.6V3V4Mb 256K x 16VolatileASYNCHRONOUSSRAMParallel256KX161612ns4194304 bit12 ns1.2mm18.41mm10.16mmROHS3 Compliant-------------
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Surface Mount36-BSOJ (0.400, 10.16mm Width)-0°C~70°C TATube-Last Time Buy3 (168 Hours)--3V~3.6V--------4Mb 512K x 8Volatile-SRAMParallel--12ns-----ROHS3 CompliantSurface Mount3620083.3V1100mA19b4 MbAsynchronous8bNoLead Free
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Surface Mount44-TSOP (0.400, 10.16mm Width)--40°C~85°C TATray-Obsolete3 (168 Hours)--3V~3.6V--------4Mb 256K x 16Volatile-SRAMParallel--12ns-----ROHS3 Compliant------------
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Surface Mount44-TSOP (0.400, 10.16mm Width)YES-40°C~85°C TATrayyesActive3 (168 Hours)44CMOS3V~3.6VDUAL13.3V-44R-PDSO-G443.6V3V4Mb 256K x 16VolatileASYNCHRONOUSSRAMParallel256KX161612ns4194304 bit12 ns---ROHS3 Compliant------------
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