Renesas Electronics America R1RW0408DGE-2LR#B0
- Part Number:
- R1RW0408DGE-2LR#B0
- Manufacturer:
- Renesas Electronics America
- Ventron No:
- 7104804-R1RW0408DGE-2LR#B0
- Description:
- Surface Mount Memory IC 4 Mb kb 100mA mA 8b b
- Datasheet:
- R1RW0408D Series
Renesas Electronics America R1RW0408DGE-2LR#B0 technical specifications, attributes, parameters and parts with similar specifications to Renesas Electronics America R1RW0408DGE-2LR#B0.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case36-BSOJ (0.400, 10.16mm Width)
- Number of Pins36
- Operating Temperature0°C~70°C TA
- PackagingTube
- Published2008
- Part StatusLast Time Buy
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Voltage - Supply3V~3.6V
- Operating Supply Voltage3.3V
- Memory Size4Mb 512K x 8
- Number of Ports1
- Nominal Supply Current100mA
- Memory TypeVolatile
- Memory FormatSRAM
- Memory InterfaceParallel
- Write Cycle Time - Word, Page12ns
- Address Bus Width19b
- Density4 Mb
- Sync/AsyncAsynchronous
- Word Size8b
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
R1RW0408DGE-2LR#B0 Overview
The Renesas Electronics America brand offers a Memory electronic component within its Memory category. This specific part features a surface mount design for easy integration into various applications. It comes in a 36-BSOJ package/case with dimensions of 0.400 inches by 10.16mm. The information was last updated in 2008, and it is currently classified as a "Last Time Buy." Additionally, it has a high moisture sensitivity level of 3 (168 hours) to ensure reliable operation even in harsh environments. In terms of voltage requirements, this memory component operates efficiently between 3V and 3.6V. It utilizes SRAM memory format with a parallel interface that ensures seamless data transfer. The address bus width is impressive at 19 bits, providing ample space for efficient data management.
R1RW0408DGE-2LR#B0 Features
Package / Case: 36-BSOJ (0.400, 10.16mm Width)
36 Pins
Operating Supply Voltage:3.3V
R1RW0408DGE-2LR#B0 Applications
There are a lot of Renesas Electronics America
R1RW0408DGE-2LR#B0 Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
The Renesas Electronics America brand offers a Memory electronic component within its Memory category. This specific part features a surface mount design for easy integration into various applications. It comes in a 36-BSOJ package/case with dimensions of 0.400 inches by 10.16mm. The information was last updated in 2008, and it is currently classified as a "Last Time Buy." Additionally, it has a high moisture sensitivity level of 3 (168 hours) to ensure reliable operation even in harsh environments. In terms of voltage requirements, this memory component operates efficiently between 3V and 3.6V. It utilizes SRAM memory format with a parallel interface that ensures seamless data transfer. The address bus width is impressive at 19 bits, providing ample space for efficient data management.
R1RW0408DGE-2LR#B0 Features
Package / Case: 36-BSOJ (0.400, 10.16mm Width)
36 Pins
Operating Supply Voltage:3.3V
R1RW0408DGE-2LR#B0 Applications
There are a lot of Renesas Electronics America
R1RW0408DGE-2LR#B0 Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
R1RW0408DGE-2LR#B0 More Descriptions
Asynchronous Last Time Buy 2008 Volatile SRAM Memory 0C~70C TA 3.3V 4Mb 100mA
SRAM Chip Async Single 3.3V 4M-bit 512K x 8 12ns 36-Pin SOJ Tube
4M High-speed SRAM (512-kword × 8-bit)
SRAM Chip Async Single 3.3V 4M-bit 512K x 8 12ns 36-Pin SOJ Tube
4M High-speed SRAM (512-kword × 8-bit)
The three parts on the right have similar specifications to R1RW0408DGE-2LR#B0.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Voltage - SupplyOperating Supply VoltageMemory SizeNumber of PortsNominal Supply CurrentMemory TypeMemory FormatMemory InterfaceWrite Cycle Time - Word, PageAddress Bus WidthDensitySync/AsyncWord SizeRadiation HardeningRoHS StatusLead FreeView Compare
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R1RW0408DGE-2LR#B0Surface MountSurface Mount36-BSOJ (0.400, 10.16mm Width)360°C~70°C TATube2008Last Time Buy3 (168 Hours)3V~3.6V3.3V4Mb 512K x 81100mAVolatileSRAMParallel12ns19b4 MbAsynchronous8bNoROHS3 CompliantLead Free-
-
Surface MountSurface Mount36-BSOJ (0.400, 10.16mm Width)36-40°C~85°C TATube2004Last Time Buy3 (168 Hours)3V~3.6V3.3V4Mb 512K x 81100mAVolatileSRAMParallel12ns19b4 MbAsynchronous8bNoROHS3 CompliantLead Free
-
-Surface Mount44-TSOP (0.400, 10.16mm Width)--40°C~85°C TATray-Obsolete3 (168 Hours)3V~3.6V-4Mb 256K x 16--VolatileSRAMParallel12ns-----ROHS3 Compliant-
-
-Surface Mount44-TSOP (0.400, 10.16mm Width)--40°C~85°C TATray-Obsolete3 (168 Hours)3V~3.6V-4Mb 256K x 16--VolatileSRAMParallel12ns-----ROHS3 Compliant-
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