Renesas Electronics America R1LV0108ESA-5SR#B0

Name: R1LV0108ESA-5SR#B0
Brand: Renesas Electronics America
SKU: 7375947-R1LV0108ESA-5SR#B0
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: R1LV0108ESA-5SR#B0

Manufacturer:: Renesas Electronics America

Ventron No:: 7375947-R1LV0108ESA-5SR#B0

Description:: 32 Pin Memory IC R1LV0108E 1 Mb kb

ECAD Model:

Datasheet:: R1LV0108ESA-5SR#B0

Specifications

Renesas Electronics America R1LV0108ESA-5SR#B0 technical specifications, attributes, parameters and parts with similar specifications to Renesas Electronics America R1LV0108ESA-5SR#B0.

Factory Lead Time
16 Weeks
Mounting Type
Surface Mount
Package / Case
32-TFSOP (0.465, 11.80mm Width)
Surface Mount
YES
Operating Temperature
0°C~70°C TA
Packaging
Tray
Published
2011
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
32
ECCN Code
EAR99
Technology
CMOS
Voltage - Supply
2.7V~3.6V
Terminal Position
DUAL
Number of Functions
1
Supply Voltage
3V
Terminal Pitch
0.5mm
Base Part Number
R1LV0108E
Pin Count
32
JESD-30 Code
R-PDSO-G32
Operating Supply Voltage
3V
Supply Voltage-Max (Vsup)
3.6V
Supply Voltage-Min (Vsup)
2.7V
Memory Size
1Mb 128K x 8
Number of Ports
1
Memory Type
Volatile
Supply Current-Max
0.025mA
Memory Format
SRAM
Memory Interface
Parallel
Output Characteristics
3-STATE
Memory Width
8
Write Cycle Time - Word, Page
55ns
Address Bus Width
17b
Density
1 Mb
Standby Current-Max
0.000002A
Access Time (Max)
55 ns
I/O Type
COMMON
Standby Voltage-Min
2V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

R1LV0108ESA-5SR#B0 Overview
In terms of its memory type, it can be classified as Volatile. The case comes in Tray size. The case is embedded in 32-TFSOP (0.465, 11.80mm Width). Memory size on the chip is 1Mb 128K x 8. This device uses takes advantage of the SRAM format. The device's extended operating temperature range of 0°C~70°C TA makes it ideal for many demanding applications. The device is capable of handling a supply voltage of 2.7V~3.6V. The recommended mounting type for this device is Surface Mount. On the chip, there are 32 terminations. The comprehensive working procedure is supported by 1 functions in this part. A voltage of 3V is required for the operation of this memory device. It is common to select similar parts by referring to the device's base part number, R1LV0108E. A memory device like this has 32 pins, indicating that there are 32 memory locations on the device. There is a note stating that this memory chip operates at 3V. In this chip, there are 1 ports providing read and/or write access to one memory address. A memory mapped I/O port address of COMMON bits is used in this device. With a maximum supply current of 0.025mA , it is able to operate from a variety of supplies.

R1LV0108ESA-5SR#B0 Features
Package / Case: 32-TFSOP (0.465, 11.80mm Width)
Operating Supply Voltage:3V
I/O Type: COMMON

R1LV0108ESA-5SR#B0 Applications
There are a lot of Renesas Electronics America
R1LV0108ESA-5SR#B0 Memory applications.

eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer

R1LV0108ESA-5SR#B0 More Descriptions

SRAM Chip Async Single 3V 1M-Bit 128K x 8 55ns 32-Pin TSOP-I Tray
IC SRAM 1MBIT PARALLEL 32TSOP I
128K X 8 STANDARD SRAM 55 ns PDSO32

Product Comparison

The three parts on the right have similar specifications to R1LV0108ESA-5SR#B0.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Operating Temperature

Packaging

Published

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Technology

Voltage - Supply

Terminal Position

Number of Functions

Supply Voltage

Terminal Pitch

Base Part Number

Pin Count

JESD-30 Code

Operating Supply Voltage

Supply Voltage-Max (Vsup)

Supply Voltage-Min (Vsup)

Memory Size

Number of Ports

Memory Type

Supply Current-Max

Memory Format

Memory Interface

Output Characteristics

Memory Width

Write Cycle Time - Word, Page

Address Bus Width

Density

Standby Current-Max

Access Time (Max)

I/O Type

Standby Voltage-Min

Radiation Hardening

RoHS Status

Supplier Device Package

Access Time

View Compare
R1LV0108ESA-5SR#B0

Renesas Electronics America

16 Weeks

Surface Mount

32-TFSOP (0.465, 11.80mm Width)

YES

0°C~70°C TA

Tray

2011

yes

Active

1 (Unlimited)

32

EAR99

CMOS

2.7V~3.6V

DUAL

1

3V

0.5mm

R1LV0108E

32

R-PDSO-G32

3V

3.6V

2.7V

1Mb 128K x 8

1

Volatile

0.025mA

SRAM

Parallel

3-STATE

8

55ns

17b

1 Mb

0.000002A

55 ns

COMMON

2V

No

ROHS3 Compliant

-

-

-
R1LV0108ESN-5SI#S1

Renesas Electronics America

18 Weeks

Surface Mount

32-SOIC (0.450, 11.40mm Width)

-

-40°C~85°C TA

Tape & Reel (TR)

-

yes

Active

3 (168 Hours)

-

-

-

2.7V~3.6V

-

-

-

-

-

32

-

-

-

-

1Mb 128K x 8

-

Volatile

-

SRAM

Parallel

-

-

55ns

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

R1LV0108ESA-5SR#B0 vs R1LV0108ESN-5SI#S1
R1LV5256ESP-5SI#S1

Renesas Electronics America

18 Weeks

Surface Mount

28-SOIC (0.330, 8.40mm Width)

-

-40°C~85°C TA

Tape & Reel (TR)

-

yes

Active

3 (168 Hours)

-

-

-

2.7V~3.6V

-

-

-

-

-

28

-

-

-

-

256Kb 32K x 8

-

Volatile

-

SRAM

Parallel

-

-

55ns

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

R1LV0108ESA-5SR#B0 vs R1LV5256ESP-5SI#S1
R1LV5256ESP-5SR#B0

ON Semiconductor

-

Surface Mount

28-SOIC (0.330, 8.40mm Width)

-

0°C~70°C TA

Tube

-

-

Obsolete

3 (168 Hours)

-

-

SRAM

2.7V~3.6V

-

-

-

-

-

-

-

-

-

-

256Kb 32K x 8

-

Volatile

-

SRAM

Parallel

-

-

55ns

-

-

-

-

-

-

-

ROHS3 Compliant

28-SOP

55ns

R1LV0108ESA-5SR#B0 vs R1LV5256ESP-5SR#B0