Renesas Electronics America R1LV0108ESN-5SI#S1
- Part Number:
- R1LV0108ESN-5SI#S1
- Manufacturer:
- Renesas Electronics America
- Ventron No:
- 7371955-R1LV0108ESN-5SI#S1
- Description:
- 32 Pin Memory IC
- Datasheet:
- R1LV0108ESN-5SI#S1
Renesas Electronics America R1LV0108ESN-5SI#S1 technical specifications, attributes, parameters and parts with similar specifications to Renesas Electronics America R1LV0108ESN-5SI#S1.
- Factory Lead Time18 Weeks
- Mounting TypeSurface Mount
- Package / Case32-SOIC (0.450, 11.40mm Width)
- Operating Temperature-40°C~85°C TA
- PackagingTape & Reel (TR)
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Voltage - Supply2.7V~3.6V
- Pin Count32
- Memory Size1Mb 128K x 8
- Memory TypeVolatile
- Memory FormatSRAM
- Memory InterfaceParallel
- Write Cycle Time - Word, Page55ns
- RoHS StatusROHS3 Compliant
R1LV0108ESN-5SI#S1 Overview
As far as its memory type goes, it falls into the Volatile category. You can get memory ics in a Tape & Reel (TR) case. 32-SOIC (0.450, 11.40mm Width) case encloses it. There is 1Mb 128K x 8 of memory on the chip. The device uses a mainstream SRAM-format memory. Suitable for use in a wide range of demanding applications, this device offers an extended operating temperature range of -40°C~85°C TA. There is a voltage range of 2.7V~3.6V for the supply voltage. It is recommended that the mounting type be Surface Mount. It is worth noting that this memory device has 32 pins, which indicates it has 32 memory locations.
R1LV0108ESN-5SI#S1 Features
Package / Case: 32-SOIC (0.450, 11.40mm Width)
R1LV0108ESN-5SI#S1 Applications
There are a lot of Renesas Electronics America
R1LV0108ESN-5SI#S1 Memory applications.
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
As far as its memory type goes, it falls into the Volatile category. You can get memory ics in a Tape & Reel (TR) case. 32-SOIC (0.450, 11.40mm Width) case encloses it. There is 1Mb 128K x 8 of memory on the chip. The device uses a mainstream SRAM-format memory. Suitable for use in a wide range of demanding applications, this device offers an extended operating temperature range of -40°C~85°C TA. There is a voltage range of 2.7V~3.6V for the supply voltage. It is recommended that the mounting type be Surface Mount. It is worth noting that this memory device has 32 pins, which indicates it has 32 memory locations.
R1LV0108ESN-5SI#S1 Features
Package / Case: 32-SOIC (0.450, 11.40mm Width)
R1LV0108ESN-5SI#S1 Applications
There are a lot of Renesas Electronics America
R1LV0108ESN-5SI#S1 Memory applications.
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
R1LV0108ESN-5SI#S1 More Descriptions
SRAM Chip Async Single 3V/3.3V 1M-bit 128K x 8 55ns 32-Pin SOP T/R
SRAM Chip 1Mbit 128k X 8bit 55ns 32-Pin PSOP Emboss T/R
SRAM Memory IC 1Mb (128K x 8) Parallel 55ns 32-SOP
1Mb Advanced LPSRAM (128k word x 8bit)
Single 2.7V~3.6V power supply Small stand-by current: 0.6µA (3.0V, typical) No clocks, No refresh All inputs and outputs are TTL compatible. Easy memory expansion by CS1# and CS2 Common Data I/O Three-state outputs: OR-tie Capability OE# prevents data contention on the I/O bus
SRAM Chip 1Mbit 128k X 8bit 55ns 32-Pin PSOP Emboss T/R
SRAM Memory IC 1Mb (128K x 8) Parallel 55ns 32-SOP
1Mb Advanced LPSRAM (128k word x 8bit)
Single 2.7V~3.6V power supply Small stand-by current: 0.6µA (3.0V, typical) No clocks, No refresh All inputs and outputs are TTL compatible. Easy memory expansion by CS1# and CS2 Common Data I/O Three-state outputs: OR-tie Capability OE# prevents data contention on the I/O bus
The three parts on the right have similar specifications to R1LV0108ESN-5SI#S1.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseOperating TemperaturePackagingPbfree CodePart StatusMoisture Sensitivity Level (MSL)Voltage - SupplyPin CountMemory SizeMemory TypeMemory FormatMemory InterfaceWrite Cycle Time - Word, PageRoHS StatusSurface MountPublishedNumber of TerminationsECCN CodeTechnologyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchBase Part NumberJESD-30 CodeOperating Supply VoltageSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Number of PortsSupply Current-MaxOutput CharacteristicsMemory WidthAddress Bus WidthDensityStandby Current-MaxAccess Time (Max)I/O TypeStandby Voltage-MinRadiation HardeningSupplier Device PackageAccess TimeView Compare
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R1LV0108ESN-5SI#S118 WeeksSurface Mount32-SOIC (0.450, 11.40mm Width)-40°C~85°C TATape & Reel (TR)yesActive3 (168 Hours)2.7V~3.6V321Mb 128K x 8VolatileSRAMParallel55nsROHS3 Compliant----------------------------
-
16 WeeksSurface Mount32-TFSOP (0.465, 11.80mm Width)0°C~70°C TATrayyesActive1 (Unlimited)2.7V~3.6V321Mb 128K x 8VolatileSRAMParallel55nsROHS3 CompliantYES201132EAR99CMOSDUAL13V0.5mmR1LV0108ER-PDSO-G323V3.6V2.7V10.025mA3-STATE817b1 Mb0.000002A55 nsCOMMON2VNo--
-
24 WeeksSurface Mount32-TFSOP (0.465, 11.80mm Width)0°C~70°C TATape & Reel (TR)yesActive1 (Unlimited)2.7V~3.6V321Mb 128K x 8VolatileSRAMParallel55nsROHS3 CompliantYES201132EAR99CMOSDUAL13V0.5mmR1LV0108ER-PDSO-G323V3.6V2.7V10.025mA3-STATE817b1 Mb0.000002A55 nsCOMMON2VNo--
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-Surface Mount32-SOIC (0.450, 11.40mm Width)-40°C~85°C TATube-Obsolete3 (168 Hours)2.7V~3.6V-1Mb 128K x 8VolatileSRAMParallel55nsROHS3 Compliant----SRAM--------------------32-SOP55ns
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