Micron Technology Inc. MT53E256M32D2DS-053 AAT:B
- Part Number:
- MT53E256M32D2DS-053 AAT:B
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 7374469-MT53E256M32D2DS-053 AAT:B
- Description:
- Memory IC
- Datasheet:
- MT53E256M32D2DS-053 AAT:B
Micron Technology Inc. MT53E256M32D2DS-053 AAT:B technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT53E256M32D2DS-053 AAT:B.
- Factory Lead Time11 Weeks
- Mounting TypeSurface Mount
- Package / Case200-WFBGA
- Surface MountYES
- Operating Temperature-40°C~105°C
- PackagingTray
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologySDRAM - Mobile LPDDR4
- Voltage - Supply0.6V 1.1V
- Terminal PositionBOTTOM
- Terminal FormBALL
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeX-PBGA-B
- Memory Size8Gb 256M x 32
- Number of Ports1
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Clock Frequency1.866GHz
- Memory FormatDRAM
- Organization256MX32
- Memory Width32
- Memory Density8589934592 bit
- RoHS StatusROHS3 Compliant
MT53E256M32D2DS-053 AAT:B Overview
A Volatile-type memory can be classified as the memory type of this device. In addition, memory ics is available in a Tray case as well. Embedded in the 200-WFBGA case, memory ics is a single file. On the chip, there is an 8Gb 256M x 32 memory, which is the size of the chip's memory. There is a DRAM-format memory used in this device, which is the memory format used by mainstream devices. Featuring an extended operating temperature range of -40°C~105°C, this device allows it to be used in a variety of demanding applications. The device is capable of handling a supply voltage of 0.6V 1.1V volts. The recommended mounting type for memory ics is Surface Mount. The comprehensive working procedure of this part involves 1 functions. A clock frequency rotation within 1.866GHz is used for the ic memory chip to rotate data. 1 ports allow read/write access to one memory address in this chip.
MT53E256M32D2DS-053 AAT:B Features
Package / Case: 200-WFBGA
MT53E256M32D2DS-053 AAT:B Applications
There are a lot of Micron Technology Inc.
MT53E256M32D2DS-053 AAT:B Memory applications.
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
A Volatile-type memory can be classified as the memory type of this device. In addition, memory ics is available in a Tray case as well. Embedded in the 200-WFBGA case, memory ics is a single file. On the chip, there is an 8Gb 256M x 32 memory, which is the size of the chip's memory. There is a DRAM-format memory used in this device, which is the memory format used by mainstream devices. Featuring an extended operating temperature range of -40°C~105°C, this device allows it to be used in a variety of demanding applications. The device is capable of handling a supply voltage of 0.6V 1.1V volts. The recommended mounting type for memory ics is Surface Mount. The comprehensive working procedure of this part involves 1 functions. A clock frequency rotation within 1.866GHz is used for the ic memory chip to rotate data. 1 ports allow read/write access to one memory address in this chip.
MT53E256M32D2DS-053 AAT:B Features
Package / Case: 200-WFBGA
MT53E256M32D2DS-053 AAT:B Applications
There are a lot of Micron Technology Inc.
MT53E256M32D2DS-053 AAT:B Memory applications.
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
MT53E256M32D2DS-053 AAT:B More Descriptions
Active BALL BOTTOM Volatile ic memory -40C~105C 0.6V 1.1V 8589934592bit 1.866GHz
DRAM Chip Mobile LPDDR4 SDRAM 8G-Bit 256M x 32 1.8V 200-Pin WFBGA
LPDDR4 DRAM, 128MX32, CMOS, PBGA200
DRAM DRAM LPDDR4 256MX32 WFBGA AAT
IC DRAM 8GBIT 1.866GHZ 200WFBGA
DRAM, 256M X 32BIT, -40 TO 105DEG C;
Dram, 256M X 32Bit, -40 To 105Deg C; Dram Type:Lpddr4; Dram Density:8Gbit; Dram Memory Configuration:256M X 32Bit; Clock Frequency:1.866Ghz; Memory Case Style:Wfbga; No. Of Pins:200Pins; Supply Voltage Nom:1.1V; Access Time:535Ps Rohs Compliant: Yes |Micron MT53E256M32D2DS-053 AAT:B
DRAM Chip Mobile LPDDR4 SDRAM 8G-Bit 256M x 32 1.8V 200-Pin WFBGA
LPDDR4 DRAM, 128MX32, CMOS, PBGA200
DRAM DRAM LPDDR4 256MX32 WFBGA AAT
IC DRAM 8GBIT 1.866GHZ 200WFBGA
DRAM, 256M X 32BIT, -40 TO 105DEG C;
Dram, 256M X 32Bit, -40 To 105Deg C; Dram Type:Lpddr4; Dram Density:8Gbit; Dram Memory Configuration:256M X 32Bit; Clock Frequency:1.866Ghz; Memory Case Style:Wfbga; No. Of Pins:200Pins; Supply Voltage Nom:1.1V; Access Time:535Ps Rohs Compliant: Yes |Micron MT53E256M32D2DS-053 AAT:B
The three parts on the right have similar specifications to MT53E256M32D2DS-053 AAT:B.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Number of FunctionsTime@Peak Reflow Temperature-Max (s)JESD-30 CodeMemory SizeNumber of PortsMemory TypeOperating ModeClock FrequencyMemory FormatOrganizationMemory WidthMemory DensityRoHS StatusView Compare
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MT53E256M32D2DS-053 AAT:B11 WeeksSurface Mount200-WFBGAYES-40°C~105°CTrayActive3 (168 Hours)SDRAM - Mobile LPDDR40.6V 1.1VBOTTOMBALLNOT SPECIFIED1NOT SPECIFIEDX-PBGA-B8Gb 256M x 321VolatileSYNCHRONOUS1.866GHzDRAM256MX32328589934592 bitROHS3 Compliant-
-
13 WeeksSurface Mount200-WFBGA--40°C~95°C TCTrayActive-SDRAM - Mobile LPDDR41.1V------8Gb 256M x 32-Volatile-1600MHzDRAM----
-
-Surface Mount200-VFBGA--30°C~85°C TCTrayNot For New Designs3 (168 Hours)SDRAM - Mobile LPDDR41.1V------24Gb 768M x 32-Volatile-1600MHzDRAM---ROHS3 Compliant
-
-Surface Mount200-WFBGA--40°C~95°C TCTrayActive-SDRAM - Mobile LPDDR41.1V------16Gb 512M x 32-Volatile-1600MHzDRAM----
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