ISSI, Integrated Silicon Solution Inc IS45S32400E-6TLA1
- Part Number:
- IS45S32400E-6TLA1
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 7375782-IS45S32400E-6TLA1
- Description:
- Surface Mount 86 Pin Memory IC 128 Mb kb 22.22mm mm 180mA mA
- Datasheet:
- IS42S32400E, IS45S32400E
ISSI, Integrated Silicon Solution Inc IS45S32400E-6TLA1 technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS45S32400E-6TLA1.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case86-TFSOP (0.400, 10.16mm Width)
- Number of Pins86
- Operating Temperature-40°C~85°C TA
- PackagingTray
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations86
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - annealed
- Additional FeatureAUTO/SELF REFRESH
- HTS Code8542.32.00.02
- TechnologySDRAM
- Voltage - Supply3V~3.6V
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage3.3V
- Terminal Pitch0.5mm
- Time@Peak Reflow Temperature-Max (s)10
- Pin Count86
- Operating Supply Voltage3.3V
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)3V
- Memory Size128Mb 4M x 32
- Number of Ports1
- Nominal Supply Current180mA
- Memory TypeVolatile
- Clock Frequency166MHz
- Access Time5.4ns
- Memory FormatDRAM
- Memory InterfaceParallel
- Data Bus Width32b
- Organization4MX32
- Output Characteristics3-STATE
- Memory Width32
- Address Bus Width14b
- Density128 Mb
- Standby Current-Max0.001A
- I/O TypeCOMMON
- Refresh Cycles4096
- Sequential Burst Length1248FP
- Interleaved Burst Length1248
- Length22.22mm
- Height Seated (Max)1.2mm
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
IS45S32400E-6TLA1 Overview
Volatile is the type of memory it has. There is a Tray case available. The 86-TFSOP (0.400, 10.16mm Width) case contains it. The chip has an 128Mb 4M x 32 memory. This device uses a DRAM-format memory, which is of mainstream design. A wide operating temperature range makes this device ideal for a variety of demanding applications. A voltage of 3V~3.6V can be supplied to memory ics. Its recommended mounting type is Surface Mount. The chip has 86 terminations. For a comprehensive working procedure, this part supports as many as 1 functions. In order to operate this memory device, it must be supplied with 3.3V of power. It is important to note that the memory has a clock frequency rotation within the range of 166MHz. The memory device is enclosed in a package with an 86-pin connector. There are 86 pins on this memory device, which indicates it has 86 memory locations in it. A voltage of 3.3V is noted as the operating supply voltage for this memory. In this chip, Surface Mount mounting is used, a straightforward, high-efficiency mounting method. In terms of its nominal supply current, this memory component is rated at 180mA. Despite all its merits, this chip also features AUTO/SELF REFRESH to boost system performance. A memory address is accessed through 1 ports on this chip. I/O port addresses on this device are mapped to memory addresses of COMMON bits.
IS45S32400E-6TLA1 Features
Package / Case: 86-TFSOP (0.400, 10.16mm Width)
86 Pins
Operating Supply Voltage:3.3V
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
IS45S32400E-6TLA1 Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS45S32400E-6TLA1 Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
Volatile is the type of memory it has. There is a Tray case available. The 86-TFSOP (0.400, 10.16mm Width) case contains it. The chip has an 128Mb 4M x 32 memory. This device uses a DRAM-format memory, which is of mainstream design. A wide operating temperature range makes this device ideal for a variety of demanding applications. A voltage of 3V~3.6V can be supplied to memory ics. Its recommended mounting type is Surface Mount. The chip has 86 terminations. For a comprehensive working procedure, this part supports as many as 1 functions. In order to operate this memory device, it must be supplied with 3.3V of power. It is important to note that the memory has a clock frequency rotation within the range of 166MHz. The memory device is enclosed in a package with an 86-pin connector. There are 86 pins on this memory device, which indicates it has 86 memory locations in it. A voltage of 3.3V is noted as the operating supply voltage for this memory. In this chip, Surface Mount mounting is used, a straightforward, high-efficiency mounting method. In terms of its nominal supply current, this memory component is rated at 180mA. Despite all its merits, this chip also features AUTO/SELF REFRESH to boost system performance. A memory address is accessed through 1 ports on this chip. I/O port addresses on this device are mapped to memory addresses of COMMON bits.
IS45S32400E-6TLA1 Features
Package / Case: 86-TFSOP (0.400, 10.16mm Width)
86 Pins
Operating Supply Voltage:3.3V
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
IS45S32400E-6TLA1 Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS45S32400E-6TLA1 Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
IS45S32400E-6TLA1 More Descriptions
DRAM Chip SDRAM 128M-Bit 4Mx32 3.3V 86-Pin TSOP-II
IC SDRAM 128M 166MHZ 86TSOP
IC DRAM 128M PARALLEL 86TSOP II
IC DRAM 128MBIT PAR 86TSOP II
IC SDRAM 128M 166MHZ 86TSOP
IC DRAM 128M PARALLEL 86TSOP II
IC DRAM 128MBIT PAR 86TSOP II
The three parts on the right have similar specifications to IS45S32400E-6TLA1.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)Pin CountOperating Supply VoltageSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsNominal Supply CurrentMemory TypeClock FrequencyAccess TimeMemory FormatMemory InterfaceData Bus WidthOrganizationOutput CharacteristicsMemory WidthAddress Bus WidthDensityStandby Current-MaxI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthLengthHeight Seated (Max)Radiation HardeningRoHS StatusFactory Lead TimeSurface MountQualification StatusPower SuppliesOperating ModeSupply Current-MaxMemory DensityScreening LevelWidthJESD-30 CodeView Compare
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IS45S32400E-6TLA1Surface MountSurface Mount86-TFSOP (0.400, 10.16mm Width)86-40°C~85°C TATraye3yesObsolete3 (168 Hours)86EAR99Matte Tin (Sn) - annealedAUTO/SELF REFRESH8542.32.00.02SDRAM3V~3.6VDUAL26013.3V0.5mm10863.3V3.6V3V128Mb 4M x 321180mAVolatile166MHz5.4nsDRAMParallel32b4MX323-STATE3214b128 Mb0.001ACOMMON40961248FP124822.22mm1.2mmNoRoHS Compliant-----------
-
-Surface Mount54-TSOP (0.400, 10.16mm Width)54-40°C~85°C TATube--Active3 (168 Hours)-----SDRAM3V~3.6V----------512Mb 32M x 16--Volatile167MHz5.4nsDRAMParallel--------------ROHS3 Compliant8 Weeks---------
-
-Surface Mount54-TSOP (0.400, 10.16mm Width)54-40°C~85°C TATube--Active3 (168 Hours)54EAR99-PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH-SDRAM3V~3.6VDUAL-13.3V0.8mm---3.6V3V512Mb 32M x 161-Volatile167MHz5.4nsDRAMParallel-32MX163-STATE16--0.004ACOMMON81921248FP124822.22mm1.2mm-ROHS3 Compliant8 WeeksYESNot Qualified3.3VSYNCHRONOUS0.18mA536870912 bitAEC-Q10010.16mm-
-
-Surface Mount60-TFBGA--40°C~105°C TATray--Active3 (168 Hours)60EAR99-PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH-SDRAM3V~3.6VBOTTOM-13.3V0.65mm---3.6V3V16Mb 1M x 161-Volatile143MHz5.5nsDRAMParallel-1MX163-STATE16--0.0035ACOMMON20481248FP124810.1mm1.2mm-ROHS3 Compliant8 WeeksYESNot Qualified3.3VSYNCHRONOUS0.08mA16777216 bitAEC-Q1006.4mmR-PBGA-B60
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