Micron Technology Inc. EDB8164B4PR-1D-F-R TR
- Part Number:
- EDB8164B4PR-1D-F-R TR
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 7374408-EDB8164B4PR-1D-F-R TR
- Description:
- Memory IC
- Datasheet:
- EDB8164B4PR-1D-F-R TR
Micron Technology Inc. EDB8164B4PR-1D-F-R TR technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. EDB8164B4PR-1D-F-R TR.
- Mounting TypeSurface Mount
- Package / Case216-WFBGA
- Operating Temperature-30°C~85°C TC
- PackagingTape & Reel (TR)
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologySDRAM - Mobile LPDDR2
- Voltage - Supply1.14V~1.95V
- Memory Size8Gb 128M x 64
- Memory TypeVolatile
- Clock Frequency533MHz
- Memory FormatDRAM
- Memory InterfaceParallel
- RoHS StatusROHS3 Compliant
EDB8164B4PR-1D-F-R TR Overview
In this case, the memory type of the device can be classified as Volatile. Case Tape & Reel (TR) is available. An embedded 216-WFBGA case surrounds memory ics. It is estimated that the memory size on the chip is 8Gb 128M x 64. As with most mainstream devices, this one uses DRAM-format memory. Due to its wide temperature range of -30°C~85°C TC, this device is well suited to a wide range of applications that require high performance. With 1.14V~1.95V as the supply voltage, it is capable of handling memory ics. It is recommended to mount it in the Surface Mount mounting type. In order to operate effectively, the memory rotates at a clock frequency within a range of 533MHz.
EDB8164B4PR-1D-F-R TR Features
Package / Case: 216-WFBGA
EDB8164B4PR-1D-F-R TR Applications
There are a lot of Micron Technology Inc.
EDB8164B4PR-1D-F-R TR Memory applications.
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
In this case, the memory type of the device can be classified as Volatile. Case Tape & Reel (TR) is available. An embedded 216-WFBGA case surrounds memory ics. It is estimated that the memory size on the chip is 8Gb 128M x 64. As with most mainstream devices, this one uses DRAM-format memory. Due to its wide temperature range of -30°C~85°C TC, this device is well suited to a wide range of applications that require high performance. With 1.14V~1.95V as the supply voltage, it is capable of handling memory ics. It is recommended to mount it in the Surface Mount mounting type. In order to operate effectively, the memory rotates at a clock frequency within a range of 533MHz.
EDB8164B4PR-1D-F-R TR Features
Package / Case: 216-WFBGA
EDB8164B4PR-1D-F-R TR Applications
There are a lot of Micron Technology Inc.
EDB8164B4PR-1D-F-R TR Memory applications.
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
EDB8164B4PR-1D-F-R TR More Descriptions
IC DRAM 8GBIT PARALLEL 216FBGA
IC DRAM 8G PARALLEL 533MHZ
IC DRAM 12G 1866MHZ
IC DRAM 8G PARALLEL 533MHZ
IC DRAM 12G 1866MHZ
The three parts on the right have similar specifications to EDB8164B4PR-1D-F-R TR.
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ImagePart NumberManufacturerMounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyMemory SizeMemory TypeClock FrequencyMemory FormatMemory InterfaceRoHS StatusFactory Lead TimeSurface MountNumber of PinsPublishedNumber of TerminationsAdditional FeatureTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)Operating Supply VoltageSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Number of PortsOperating ModeOrganizationMemory WidthAddress Bus WidthDensityMax FrequencyAccess ModeLengthHeight Seated (Max)JESD-30 CodeMemory DensityWidthView Compare
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EDB8164B4PR-1D-F-R TRSurface Mount216-WFBGA-30°C~85°C TCTape & Reel (TR)Active3 (168 Hours)SDRAM - Mobile LPDDR21.14V~1.95V8Gb 128M x 64Volatile533MHzDRAMParallelROHS3 Compliant-----------------------------
-
Surface Mount168-WFBGA-30°C~85°C TCBulkActive3 (168 Hours)SDRAM - Mobile LPDDR21.14V~1.95V8Gb 256M x 32Volatile-DRAMParallelROHS3 Compliant12 WeeksYES1682014168AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLYBOTTOMNOT SPECIFIED11.2V0.5mmNOT SPECIFIED1.8V1.3V1.14V1SYNCHRONOUS256MX323214b8 Gb400MHzSINGLE BANK PAGE BURST12mm0.8mm---
-
Surface Mount168-VFBGA-40°C~105°C TCTape & Reel (TR)Active3 (168 Hours)SDRAM - Mobile LPDDR21.14V~1.95V8Gb 256M x 32Volatile533MHzDRAMParallelROHS3 Compliant----------------------------
-
Surface Mount216-WFBGA-40°C~105°C TCTape & Reel (TR)Obsolete3 (168 Hours)SDRAM - Mobile LPDDR21.14V~1.95V8Gb 128M x 64Volatile533MHzDRAMParallelROHS3 Compliant-YES--216AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLYBOTTOM-11.2V0.4mm--1.3V1.14V1SYNCHRONOUS128MX6464---SINGLE BANK PAGE BURST12mm0.8mmS-PBGA-B2168589934592 bit12mm
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