Micron Technology Inc. EDB8164B4PT-1DAT-F-R
- Part Number:
- EDB8164B4PT-1DAT-F-R
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 7098347-EDB8164B4PT-1DAT-F-R
- Description:
- Memory IC 12mm mm
- Datasheet:
- EDB8164B4PT-1DAT-F-R
Micron Technology Inc. EDB8164B4PT-1DAT-F-R technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. EDB8164B4PT-1DAT-F-R.
- Mounting TypeSurface Mount
- Package / Case216-WFBGA
- Surface MountYES
- Operating Temperature-40°C~105°C TC
- PackagingTape & Reel (TR)
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations216
- Additional FeatureAUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY
- TechnologySDRAM - Mobile LPDDR2
- Voltage - Supply1.14V~1.95V
- Terminal PositionBOTTOM
- Number of Functions1
- Supply Voltage1.2V
- Terminal Pitch0.4mm
- JESD-30 CodeS-PBGA-B216
- Supply Voltage-Max (Vsup)1.3V
- Supply Voltage-Min (Vsup)1.14V
- Memory Size8Gb 128M x 64
- Number of Ports1
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Clock Frequency533MHz
- Memory FormatDRAM
- Memory InterfaceParallel
- Organization128MX64
- Memory Width64
- Memory Density8589934592 bit
- Access ModeSINGLE BANK PAGE BURST
- Height Seated (Max)0.8mm
- Length12mm
- Width12mm
- RoHS StatusROHS3 Compliant
EDB8164B4PT-1DAT-F-R Overview
This product is manufactured by Micron Technology Inc., belongs to the Memory category. The mounting type is surface mount, with a surface mount option available, ensuring compatibility for a range of applications. The operating temperature for this product is between -40°C and 105°C, making it suitable for diverse environments. The packaging is in the form of a tape and reel (TR) design, providing easy handling and storage. The technology used within this product is SDRAM, specifically designed for mobile devices, offering enhanced performance and reliability. The terminal pitch measures 0.4mm, ensuring seamless integration with other components. The memory size stands at 8GB, with a total of 128M x 64, providing ample storage capacity. With a single port, this product offers flexibility in terms of memory format and is compatible with a variety of standards. The width of this product is 12mm, further enhancing its compact design and functionality.
EDB8164B4PT-1DAT-F-R Features
Package / Case: 216-WFBGA
Additional Feature:AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY
EDB8164B4PT-1DAT-F-R Applications
There are a lot of Micron Technology Inc.
EDB8164B4PT-1DAT-F-R Memory applications.
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
This product is manufactured by Micron Technology Inc., belongs to the Memory category. The mounting type is surface mount, with a surface mount option available, ensuring compatibility for a range of applications. The operating temperature for this product is between -40°C and 105°C, making it suitable for diverse environments. The packaging is in the form of a tape and reel (TR) design, providing easy handling and storage. The technology used within this product is SDRAM, specifically designed for mobile devices, offering enhanced performance and reliability. The terminal pitch measures 0.4mm, ensuring seamless integration with other components. The memory size stands at 8GB, with a total of 128M x 64, providing ample storage capacity. With a single port, this product offers flexibility in terms of memory format and is compatible with a variety of standards. The width of this product is 12mm, further enhancing its compact design and functionality.
EDB8164B4PT-1DAT-F-R Features
Package / Case: 216-WFBGA
Additional Feature:AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY
EDB8164B4PT-1DAT-F-R Applications
There are a lot of Micron Technology Inc.
EDB8164B4PT-1DAT-F-R Memory applications.
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
EDB8164B4PT-1DAT-F-R More Descriptions
IC DRAM 8GBIT PARALLEL 216FBGA
LPDDR2 8G 128MX64 FBGA DDP
IC DRAM 16G PARALLEL 800MHZ
IC DRAM 8G PARALLEL 533MHZ
LPDDR2 8G 128MX64 FBGA DDP
IC DRAM 16G PARALLEL 800MHZ
IC DRAM 8G PARALLEL 533MHZ
The three parts on the right have similar specifications to EDB8164B4PT-1DAT-F-R.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsAdditional FeatureTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchJESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeOperating ModeClock FrequencyMemory FormatMemory InterfaceOrganizationMemory WidthMemory DensityAccess ModeHeight Seated (Max)LengthWidthRoHS StatusFactory Lead TimeNumber of PinsPublishedPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Operating Supply VoltageAddress Bus WidthDensityMax FrequencyView Compare
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EDB8164B4PT-1DAT-F-RSurface Mount216-WFBGAYES-40°C~105°C TCTape & Reel (TR)Obsolete3 (168 Hours)216AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLYSDRAM - Mobile LPDDR21.14V~1.95VBOTTOM11.2V0.4mmS-PBGA-B2161.3V1.14V8Gb 128M x 641VolatileSYNCHRONOUS533MHzDRAMParallel128MX64648589934592 bitSINGLE BANK PAGE BURST0.8mm12mm12mmROHS3 Compliant----------
-
Surface Mount168-WFBGAYES-30°C~85°C TCBulkActive3 (168 Hours)168AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLYSDRAM - Mobile LPDDR21.14V~1.95VBOTTOM11.2V0.5mm-1.3V1.14V8Gb 256M x 321VolatileSYNCHRONOUS-DRAMParallel256MX3232-SINGLE BANK PAGE BURST0.8mm12mm-ROHS3 Compliant12 Weeks1682014NOT SPECIFIEDNOT SPECIFIED1.8V14b8 Gb400MHz
-
Surface Mount168-VFBGA--40°C~105°C TCTape & Reel (TR)Active3 (168 Hours)--SDRAM - Mobile LPDDR21.14V~1.95V-------8Gb 256M x 32-Volatile-533MHzDRAMParallel-------ROHS3 Compliant---------
-
Surface Mount168-VFBGA--40°C~105°C TCTape & Reel (TR)Active---SDRAM - Mobile LPDDR21.14V~1.95V-------8Gb 256M x 32-Volatile-533MHzDRAMParallel-----------------
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