Diodes Incorporated ZTX757
- Part Number:
- ZTX757
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2463244-ZTX757
- Description:
- TRANS PNP 300V 0.5A E-LINE
- Datasheet:
- ZTX75(6,7)
Diodes Incorporated ZTX757 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZTX757.
- Factory Lead Time15 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseE-Line-3
- Number of Pins3
- Weight453.59237mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~200°C TJ
- PackagingBulk
- Published2012
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-300V
- Max Power Dissipation1W
- Terminal FormWIRE
- Peak Reflow Temperature (Cel)260
- Current Rating-500mA
- Frequency30MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberZTX757
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1W
- Gain Bandwidth Product30MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)300V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 100mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 10mA, 100mA
- Collector Emitter Breakdown Voltage300V
- Transition Frequency30MHz
- Collector Emitter Saturation Voltage-500mV
- Collector Base Voltage (VCBO)300V
- Emitter Base Voltage (VEBO)-5V
- Continuous Collector Current-500mA
- Height4.01mm
- Length4.77mm
- Width2.41mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZTX757 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 10mA, 100mA.Continuous collector voltages of -500mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Its current rating is -500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 30MHz.During maximum operation, collector current can be as low as 500mA volts.
ZTX757 Features
the DC current gain for this device is 50 @ 100mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 30MHz
ZTX757 Applications
There are a lot of Diodes Incorporated
ZTX757 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 10mA, 100mA.Continuous collector voltages of -500mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Its current rating is -500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 30MHz.During maximum operation, collector current can be as low as 500mA volts.
ZTX757 Features
the DC current gain for this device is 50 @ 100mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 30MHz
ZTX757 Applications
There are a lot of Diodes Incorporated
ZTX757 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
ZTX757 More Descriptions
ZTX757 Series 300 V 0.5 A PNP Silicon Planar Medium Power Transistor - TO-92-3
Trans GP BJT PNP 300V 0.5A 1000mW Automotive 3-Pin E-Line
TRANSISTOR, PNP, E-LINE; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency Typ ft:30MHz; Power Dissipation Pd:1mW; DC Collector Current:500mA; DC Current Gain hFE:50; Operating Temperature Range:-55°C to 200°C; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:500mV; Continuous Collector Current Ic Max:500mA; Current Ic @ Vce Sat:100mA; Current Ic Continuous a Max:500mA; Current Ic hFE:100mA; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:30MHz; Gain Bandwidth ft Typ:30MHz; Hfe Min:50; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:1mW; Power Dissipation Ptot Max:1W; Termination Type:Through Hole; Voltage Vcbo:300V
Trans GP BJT PNP 300V 0.5A 1000mW Automotive 3-Pin E-Line
TRANSISTOR, PNP, E-LINE; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency Typ ft:30MHz; Power Dissipation Pd:1mW; DC Collector Current:500mA; DC Current Gain hFE:50; Operating Temperature Range:-55°C to 200°C; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:500mV; Continuous Collector Current Ic Max:500mA; Current Ic @ Vce Sat:100mA; Current Ic Continuous a Max:500mA; Current Ic hFE:100mA; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:30MHz; Gain Bandwidth ft Typ:30MHz; Hfe Min:50; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:1mW; Power Dissipation Ptot Max:1W; Termination Type:Through Hole; Voltage Vcbo:300V
The three parts on the right have similar specifications to ZTX757.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeManufacturer Package IdentifierSurface MountHTS CodeTerminal PositionJESD-30 CodeQualification StatusConfigurationPower - MaxTransistor ApplicationVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionReach Compliance CodeView Compare
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ZTX75715 WeeksThrough HoleThrough HoleE-Line-33453.59237mgSILICON-55°C~200°C TJBulk2012e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)Other Transistors-300V1WWIRE260-500mA30MHz40ZTX75731Single1W30MHzPNPPNP300V500mA50 @ 100mA 5V100nA ICBO500mV @ 10mA, 100mA300V30MHz-500mV300V-5V-500mA4.01mm4.77mm2.41mmNo SVHCNoROHS3 CompliantLead Free--------------
-
-Through HoleThrough HoleE-Line-33453.59237mgSILICON-55°C~200°C TJBulk2012e3yesObsolete1 (Unlimited)3EAR99Matte Tin (Sn)Other Transistors-200V1W-260-500mA100MHz40ZTX796A31Single1W100MHzPNPPNP200V500mA300 @ 10mA 5V100nA300mV @ 20mA, 200mA200V100MHz-300mV200V-5V-500mA4.01mm4.77mm2.41mmNo SVHCNoROHS3 CompliantLead FreeE-Line------------
-
--Through HoleE-Line-3, Formed Leads--SILICON-55°C~200°C TJTape & Reel (TR)2012e3-Obsolete1 (Unlimited)3EAR99MATTE TIN---WIRE260--40ZTX792A31---PNPPNP--300 @ 10mA 2V100nA ICBO500mV @ 200mA, 2A-100MHz------------NO8541.29.00.75SINGLER-PSIP-W3Not QualifiedSINGLE1WSWITCHING70V2A100MHz-
-
-Through HoleThrough HoleE-Line-3, Formed Leads-453.59237mg--55°C~200°C TJTape & Reel (TR)2012--Obsolete1 (Unlimited)-----140V1W---500mA--ZTX795A3-Single-100MHz-PNP250mV500mA300 @ 10mA 2V100nA ICBO250mV @ 50mA, 500mA140V--300mV-140V-5V-500mA4.01mm4.77mm2.41mm--RoHS CompliantLead Free----------500mA-unknown
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