Diodes Incorporated ZTX751
- Part Number:
- ZTX751
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2845235-ZTX751
- Description:
- TRANS PNP 60V 2A E-LINE
- Datasheet:
- ZTX75(0,1)
Diodes Incorporated ZTX751 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZTX751.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseE-Line-3
- Number of Pins3
- Weight453.59237mg
- Transistor Element MaterialSILICON
- Manufacturer Package IdentifierE-Line
- Operating Temperature-55°C~200°C TJ
- PackagingBulk
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-60V
- Max Power Dissipation1W
- Terminal FormWIRE
- Peak Reflow Temperature (Cel)260
- Current Rating-2A
- Frequency140MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberZTX751
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1W
- Gain Bandwidth Product140MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current2A
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 200mA, 2A
- Collector Emitter Breakdown Voltage60V
- Transition Frequency140MHz
- Collector Emitter Saturation Voltage-280mV
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)5V
- DC Current Gain-Min (hFE)40
- Continuous Collector Current-2A
- Height4.01mm
- Length4.77mm
- Width2.41mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZTX751 Overview
As it features a collector emitter saturation voltage of -280mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -2A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 140MHz in the part.When collector current reaches its maximum, it can reach 2A volts.
ZTX751 Features
a collector emitter saturation voltage of -280mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 140MHz
ZTX751 Applications
There are a lot of Diodes Incorporated
ZTX751 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As it features a collector emitter saturation voltage of -280mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -2A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 140MHz in the part.When collector current reaches its maximum, it can reach 2A volts.
ZTX751 Features
a collector emitter saturation voltage of -280mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 140MHz
ZTX751 Applications
There are a lot of Diodes Incorporated
ZTX751 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
ZTX751 More Descriptions
ZTX751 Series PNP 2 A 60 V Silicon Planar Medium Power Transistor - TO-92-3
Small Signal Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon
In a Box of 4000, Diodes Inc ZTX751 PNP Transistor, 2 A, 60 V, 3-Pin E-Line
TRANSISTOR, PNP, 60V, 2A, E-LINE; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:60V; Power Dissipation Pd:1W; DC Collector Current:-2A; DC Current Gain hFE:200; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:500mV; Continuous Collector Current Ic Max:2A; Current Ic @ Vce Sat:2A; Current Ic Continuous a Max:2A; Current Ic hFE:500mA; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:140MHz; Hfe Min:100; No. of Transistors:1; Package / Case:E-Line; Pin Configuration:e; Power Dissipation Pd:1W; Power Dissipation Ptot Max:1W; Termination Type:Through Hole; Voltage Vcbo:80V
Small Signal Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon
In a Box of 4000, Diodes Inc ZTX751 PNP Transistor, 2 A, 60 V, 3-Pin E-Line
TRANSISTOR, PNP, 60V, 2A, E-LINE; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:60V; Power Dissipation Pd:1W; DC Collector Current:-2A; DC Current Gain hFE:200; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:500mV; Continuous Collector Current Ic Max:2A; Current Ic @ Vce Sat:2A; Current Ic Continuous a Max:2A; Current Ic hFE:500mA; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:140MHz; Hfe Min:100; No. of Transistors:1; Package / Case:E-Line; Pin Configuration:e; Power Dissipation Pd:1W; Power Dissipation Ptot Max:1W; Termination Type:Through Hole; Voltage Vcbo:80V
The three parts on the right have similar specifications to ZTX751.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialManufacturer Package IdentifierOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)DC Current Gain-Min (hFE)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeDC Current Gain (hFE) (Min) @ Ic, VceHTS CodeTransistor ApplicationCurrent - Collector (Ic) (Max)View Compare
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ZTX751Through HoleThrough HoleE-Line-33453.59237mgSILICONE-Line-55°C~200°C TJBulk2006e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)Other Transistors-60V1WWIRE260-2A140MHz40ZTX75131Single1W140MHzPNPPNP60V2A100nA ICBO500mV @ 200mA, 2A60V140MHz-280mV80V5V40-2A4.01mm4.77mm2.41mmNo SVHCNoROHS3 CompliantLead Free-----
-
Through HoleThrough HoleE-Line-33453.59237mgSILICONE-Line-55°C~200°C TJBulk2012e3yesObsolete1 (Unlimited)3EAR99Matte Tin (Sn)Other Transistors-200V1W-260-500mA100MHz40ZTX796A31Single1W100MHzPNPPNP200V500mA100nA300mV @ 20mA, 200mA200V100MHz-300mV200V-5V--500mA4.01mm4.77mm2.41mmNo SVHCNoROHS3 CompliantLead Free300 @ 10mA 5V---
-
Through HoleThrough HoleE-Line-3, Formed Leads3453.59237mgSILICON--55°C~200°C TJTape & Reel (TR)2006e3-Obsolete1 (Unlimited)3EAR99Matte Tin (Sn)--400V1WWIRE260-500mA-40ZTX75831Single-50MHzPNPPNP500mV500mA100nA500mV @ 10mA, 100mA400V50MHz-500mV-400V-5V--500mA4.01mm4.77mm2.41mmNo SVHCNoRoHS CompliantLead Free40 @ 200mA 10V8541.29.00.75SWITCHING500mA
-
Through HoleThrough HoleE-Line-3, Formed Leads-----55°C~200°C TJTape & Box (TB)---Obsolete1 (Unlimited)-----150V1W---1A--ZTX7553-Single-30MHz-PNP500mV1A100nA ICBO500mV @ 200mA, 1A150V---150V-5V--1A-----RoHS CompliantLead Free50 @ 500mA 5V--1A
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