Vishay Semiconductor Opto Division VEMT2500X01
- Part Number:
- VEMT2500X01
- Manufacturer:
- Vishay Semiconductor Opto Division
- Ventron No:
- 4446462-VEMT2500X01
- Description:
- PHOTOTRANSISTOR 850NM SMD REV GW
- ECAD Model:
-
- Datasheet:
- VEMT2500X01
Vishay Semiconductor Opto Division VEMT2500X01 technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Opto Division VEMT2500X01.
- Factory Lead Time17 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case2-SMD, Z-Bend
- Number of Pins2
- ShapeROUND
- Operating Temperature-40°C~100°C TA
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2008
- Part StatusActive
- Moisture Sensitivity Level (MSL)2A (4 Weeks)
- Additional FeatureHIGH RADIANT SENSITIVITY
- Packing MethodTR
- Max Power Dissipation100mW
- OrientationTop View
- Number of Functions1
- Number of Elements1
- PolarityNPN
- ConfigurationSINGLE
- Power Dissipation100mW
- Viewing Angle30°
- Optoelectronic Device TypePHOTO TRANSISTOR
- Lens StyleDomed
- Collector Emitter Voltage (VCEO)20V
- Max Collector Current50mA
- Collector Emitter Breakdown Voltage20V
- Lens ColorClear
- Power Consumption100mW
- Wavelength850nm
- Collector Emitter Saturation Voltage400mV
- Max Breakdown Voltage20V
- On-State Current-Max0.05A
- Dark Current1nA
- Infrared RangeYES
- Light Current-Nom6mA
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
VEMT2500X01 Overview
This product is manufactured by Vishay Semiconductor Opto Division and belongs to the category of Optical Sensors - Phototransistors. The images we provide are for reference only, for detailed product information please see specification sheet VEMT2500X01 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of VEMT2500X01. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Vishay Semiconductor Opto Division and belongs to the category of Optical Sensors - Phototransistors. The images we provide are for reference only, for detailed product information please see specification sheet VEMT2500X01 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of VEMT2500X01. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
VEMT2500X01 More Descriptions
VEMT2500 Series 20 V 850 nm 100 mW Surface Mount Silicon NPN Phototransistor
VISHAY VEMT2500X01 Phototransistor, 850 nm, 15 , 100 mW, 2 Pins
No Phototransistor Chip Silicon 850nm Automotive 2-Pin SMD T/R
Product Description Demo for Development.
French Electronic Distributor since 1988
Photo Transistor, 850nm, 0.05A I(C)
IR Phototransistor 850 nm 20 V SMD
PHOTO TRANSISTOR, NPN, AEC-Q101, SMD
PHOTOTRANSISTOR 850NM SMD REV GW
PHOTOTRANSISTOR REVERSE AECQ101
PHOTOTRANSISTOR 470 TO 1090 NM
VISHAY VEMT2500X01 Phototransistor, 850 nm, 15 , 100 mW, 2 Pins
No Phototransistor Chip Silicon 850nm Automotive 2-Pin SMD T/R
Product Description Demo for Development.
French Electronic Distributor since 1988
Photo Transistor, 850nm, 0.05A I(C)
IR Phototransistor 850 nm 20 V SMD
PHOTO TRANSISTOR, NPN, AEC-Q101, SMD
PHOTOTRANSISTOR 850NM SMD REV GW
PHOTOTRANSISTOR REVERSE AECQ101
PHOTOTRANSISTOR 470 TO 1090 NM
The three parts on the right have similar specifications to VEMT2500X01.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsShapeOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Additional FeaturePacking MethodMax Power DissipationOrientationNumber of FunctionsNumber of ElementsPolarityConfigurationPower DissipationViewing AngleOptoelectronic Device TypeLens StyleCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageLens ColorPower ConsumptionWavelengthCollector Emitter Saturation VoltageMax Breakdown VoltageOn-State Current-MaxDark CurrentInfrared RangeLight Current-NomREACH SVHCRadiation HardeningRoHS StatusPbfree CodeSubcategorySizeRise TimeFall Time (Typ)Current - Collector (Ic) (Max)HeightLengthWidthLead FreeJESD-609 CodeECCN CodeTerminal FinishNumber of ChannelsBreakdown VoltageMax Operating TemperatureMin Operating TemperatureColl-Emtr Bkdn Voltage-MinView Compare
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VEMT2500X0117 WeeksSurface MountSurface Mount2-SMD, Z-Bend2ROUND-40°C~100°C TATape & Reel (TR)Automotive, AEC-Q1012008Active2A (4 Weeks)HIGH RADIANT SENSITIVITYTR100mWTop View11NPNSINGLE100mW30°PHOTO TRANSISTORDomed20V50mA20VClear100mW850nm400mV20V0.05A1nAYES6mAUnknownNoROHS3 Compliant------------------- -
7 WeeksSurface MountSurface Mount4-SMD, J-Lead3ROUND-40°C~100°C TATape & Reel (TR)Automotive, AEC-Q1002008Active3 (168 Hours)HIGH SENSITIVITY-100mWTop View11NPNSINGLE100mW120°PHOTO TRANSISTORFlat70V50mA70V-100mW850nm150mV70V0.05A200nAYES0.5mAUnknownNoROHS3 CompliantyesPhoto Transistors2.4mm6μs6 μs100mA1.75mm3.5mm2.8mmLead Free--------
-
17 WeeksSurface MountSurface Mount2-SMD, Z-Bend2ROUND-40°C~100°C TATape & Reel (TR)Automotive, AEC-Q1012008Active2A (4 Weeks)DAY LIGHT, HIGH SENSITIVITY-100mWTop View1-NPNSINGLE100mW30°PHOTO TRANSISTORDomed7V50mA20VBlack100mW860nm400mV20V0.05A100nAYES6mAUnknownNoROHS3 CompliantyesPhoto Transistors----2.77mm2.3mm2.3mmLead Freee3EAR99Matte Tin (Sn)120V---
-
7 WeeksSurface MountSurface Mount3-SMD, J-Lead3ROUND-Tape & Reel (TR)-2014Active3 (168 Hours)DAY LIGHT FILTER, HIGH SENSITIVITY---11NPNSINGLE100mW120 °PHOTO TRANSISTORFlat5V50mA---940 nm--0.05A200nAYES0.5mAUnknownNoROHS3 Compliant-Photo Transistors2.4mm6μs2 μs----------100°C-40°C70V
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