Vishay Semiconductor Opto Division VEMT2000X01
- Part Number:
- VEMT2000X01
- Manufacturer:
- Vishay Semiconductor Opto Division
- Ventron No:
- 4446461-VEMT2000X01
- Description:
- PHOTOTRANSISTOR NPN REV GULLWING
- ECAD Model:
-
- Datasheet:
- VEMT2000X01
Vishay Semiconductor Opto Division VEMT2000X01 technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Opto Division VEMT2000X01.
- Factory Lead Time17 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case2-SMD, Z-Bend
- Number of Pins2
- ShapeROUND
- Operating Temperature-40°C~100°C TA
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)2A (4 Weeks)
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureDAY LIGHT, HIGH SENSITIVITY
- SubcategoryPhoto Transistors
- Max Power Dissipation100mW
- OrientationTop View
- Number of Functions1
- PolarityNPN
- ConfigurationSINGLE
- Number of Channels1
- Power Dissipation100mW
- Viewing Angle30°
- Optoelectronic Device TypePHOTO TRANSISTOR
- Lens StyleDomed
- Breakdown Voltage20V
- Collector Emitter Voltage (VCEO)7V
- Max Collector Current50mA
- Collector Emitter Breakdown Voltage20V
- Lens ColorBlack
- Power Consumption100mW
- Wavelength860nm
- Collector Emitter Saturation Voltage400mV
- Max Breakdown Voltage20V
- On-State Current-Max0.05A
- Dark Current100nA
- Infrared RangeYES
- Light Current-Nom6mA
- Height2.77mm
- Length2.3mm
- Width2.3mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
VEMT2000X01 Overview
This product is manufactured by Vishay Semiconductor Opto Division and belongs to the category of Optical Sensors - Phototransistors. The images we provide are for reference only, for detailed product information please see specification sheet VEMT2000X01 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of VEMT2000X01. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Vishay Semiconductor Opto Division and belongs to the category of Optical Sensors - Phototransistors. The images we provide are for reference only, for detailed product information please see specification sheet VEMT2000X01 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of VEMT2000X01. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
VEMT2000X01 More Descriptions
VEMT2000X01 Series ±15° 6 mA (Ica) 860 nm NPN Silicon Phototransistor
TRANSISTOR, PHOTO, NPN, 860NM, SMD; Tran; TRANSISTOR, PHOTO, NPN, 860NM, SMD; Transistor Polarity:NPN; Wavelength Typ:860nm; Power Consumption:100mW; Viewing Angle:15°; No. of Pins:2; MSL:MSL 2A - 4 weeks; Collector Current Typ:6mA
PHOT. DIODE SMD REV. GULLWING FILT.; Transistor Polarity:NPN; Wavelength Typ:860nm; Power Consumption:100mW; Viewing Angle:15°; Transistor Case Style:SMD; No. of Pins:2; Half Angle:15°; Operating Temperature Range:-40°C to 100°C; Breakdown Voltage Vbr:20V; Dark Current:1nA
TRANSISTOR, PHOTO, NPN, 860NM, SMD; Tran; TRANSISTOR, PHOTO, NPN, 860NM, SMD; Transistor Polarity:NPN; Wavelength Typ:860nm; Power Consumption:100mW; Viewing Angle:15°; No. of Pins:2; MSL:MSL 2A - 4 weeks; Collector Current Typ:6mA
PHOT. DIODE SMD REV. GULLWING FILT.; Transistor Polarity:NPN; Wavelength Typ:860nm; Power Consumption:100mW; Viewing Angle:15°; Transistor Case Style:SMD; No. of Pins:2; Half Angle:15°; Operating Temperature Range:-40°C to 100°C; Breakdown Voltage Vbr:20V; Dark Current:1nA
The three parts on the right have similar specifications to VEMT2000X01.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsShapeOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)ECCN CodeTerminal FinishAdditional FeatureSubcategoryMax Power DissipationOrientationNumber of FunctionsPolarityConfigurationNumber of ChannelsPower DissipationViewing AngleOptoelectronic Device TypeLens StyleBreakdown VoltageCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageLens ColorPower ConsumptionWavelengthCollector Emitter Saturation VoltageMax Breakdown VoltageOn-State Current-MaxDark CurrentInfrared RangeLight Current-NomHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeCurrent - Dark (Id) (Max)Packing MethodMax Operating TemperatureMin Operating TemperatureNumber of ElementsSizeRise TimeFall Time (Typ)Coll-Emtr Bkdn Voltage-MinView Compare
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VEMT2000X0117 WeeksSurface MountSurface Mount2-SMD, Z-Bend2ROUND-40°C~100°C TATape & Reel (TR)Automotive, AEC-Q1012008e3yesActive2A (4 Weeks)EAR99Matte Tin (Sn)DAY LIGHT, HIGH SENSITIVITYPhoto Transistors100mWTop View1NPNSINGLE1100mW30°PHOTO TRANSISTORDomed20V7V50mA20VBlack100mW860nm400mV20V0.05A100nAYES6mA2.77mm2.3mm2.3mmUnknownNoROHS3 CompliantLead Free---------- -
17 WeeksSurface MountSurface Mount2-SMD, Z-Bend2--40°C~100°C TATape & Reel (TR)Automotive, AEC-Q1012013--Active2A (4 Weeks)----100mWTop View-NPN--100mW70°PHOTO TRANSISTORDomed-20V50mA20VClear-850nm400mV20V-100nA-----UnknownNoROHS3 CompliantLead Free1nA--------
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17 WeeksSurface MountSurface Mount2-SMD, Gull Wing2ROUND-40°C~100°C TATape & Reel (TR)Automotive, AEC-Q1012008--Active2A (4 Weeks)--HIGH RADIANT SENSITIVITY-100mWTop View1NPNSINGLE1100mW30°PHOTO TRANSISTORDomed-7V50mA20VClear100mW850nm400mV20V0.05A1nAYES6mA2.77mm2.3mm2.3mmUnknownNoROHS3 Compliant--TR-------
-
7 WeeksSurface MountSurface Mount3-SMD, J-Lead3ROUND-Tape & Reel (TR)-2014--Active3 (168 Hours)--DAY LIGHT FILTER, HIGH SENSITIVITYPhoto Transistors--1NPNSINGLE-100mW120 °PHOTO TRANSISTORFlat-5V50mA---940 nm--0.05A200nAYES0.5mA---UnknownNoROHS3 Compliant---100°C-40°C12.4mm6μs2 μs70V
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