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UMG5NTR

Rohm Semiconductor UMG5NTR

Part Number:
UMG5NTR
Manufacturer:
Rohm Semiconductor
Ventron No:
3584870-UMG5NTR
Description:
TRANS 2NPN PREBIAS 0.15W UMT5
ECAD Model:
Datasheet:
UMG5NTR

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Specifications
Rohm Semiconductor UMG5NTR technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor UMG5NTR.
  • Factory Lead Time
    7 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    5-TSSOP, SC-70-5, SOT-353
  • Number of Pins
    5
  • Packaging
    Tape & Reel (TR)
  • Published
    2002
  • JESD-609 Code
    e2
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Copper (Sn/Cu)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Additional Feature
    BUILT-IN BIAS RESISTOR RATIO IS 4.7
  • Subcategory
    BIP General Purpose Small Signal
  • Voltage - Rated DC
    50V
  • Max Power Dissipation
    150mW
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    100mA
  • Time@Peak Reflow Temperature-Max (s)
    10
  • Base Part Number
    *MG5
  • Pin Count
    5
  • Number of Elements
    2
  • Polarity
    NPN
  • Configuration
    COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
  • Power Dissipation
    150mW
  • Transistor Application
    SWITCHING
  • Transistor Type
    2 NPN - Pre-Biased (Dual)
  • Collector Emitter Voltage (VCEO)
    300mV
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    68 @ 5mA 5V
  • Current - Collector Cutoff (Max)
    500nA
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 250μA, 5mA
  • Collector Emitter Breakdown Voltage
    50V
  • Transition Frequency
    250MHz
  • Max Breakdown Voltage
    50V
  • Frequency - Transition
    250MHz
  • hFE Min
    68
  • Resistor - Base (R1)
    10k Ω
  • Continuous Collector Current
    100mA
  • Resistor - Emitter Base (R2)
    47k Ω
  • VCEsat-Max
    0.3 V
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
UMG5NTR Overview
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet UMG5NTR or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of UMG5NTR. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
UMG5NTR More Descriptions
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount U
Trans Digital BJT NPN 50V 100mA 5-Pin UMT T/R
Rf Transistor, 50V, 0.1A, Sot-353 Rohs Compliant: Yes |Rohm UMG5NTR
French Electronic Distributor since 1988
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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