Fairchild/ON Semiconductor TIP147TU
- Part Number:
- TIP147TU
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2463481-TIP147TU
- Description:
- TRANS PNP DARL 100V 10A TO-3P
- Datasheet:
- TIP140-147
Fairchild/ON Semiconductor TIP147TU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor TIP147TU.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-3P-3, SC-65-3
- Number of Pins3
- Weight6.401g
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-100V
- Max Power Dissipation80W
- Current Rating-10A
- Base Part NumberTIP147
- Number of Elements1
- PolarityPNP
- Element ConfigurationSingle
- Power Dissipation80W
- Transistor TypePNP - Darlington
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current10A
- DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 5A 4V
- Current - Collector Cutoff (Max)2mA
- Vce Saturation (Max) @ Ib, Ic3V @ 40mA, 10A
- Collector Emitter Breakdown Voltage100V
- Collector Emitter Saturation Voltage2V
- Collector Base Voltage (VCBO)-100V
- Emitter Base Voltage (VEBO)-5V
- hFE Min1000
- Height6.35mm
- Length6.35mm
- Width6.35mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
TIP147TU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 5A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 40mA, 10A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Its current rating is -10A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 10A volts.
TIP147TU Features
the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 10A
the emitter base voltage is kept at -5V
the current rating of this device is -10A
TIP147TU Applications
There are a lot of ON Semiconductor
TIP147TU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 5A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 40mA, 10A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Its current rating is -10A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 10A volts.
TIP147TU Features
the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 10A
the emitter base voltage is kept at -5V
the current rating of this device is -10A
TIP147TU Applications
There are a lot of ON Semiconductor
TIP147TU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
TIP147TU More Descriptions
10 A, 100 V PNP Darlington Bipolar Power Transistor
TIP Series PNP 80 W -100 V -10 A Epitaxial Darlington Transistor - TO-220-3
Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
Transistor Darlington PNP 100V 10A 3-Pin TO-3P Rail - Rail/Tube
Transistor Polarity:pnp; Collector Emitter Voltage V(Br)Ceo:100V; Dc Collector Current:10A; Power Dissipation Pd:80W; Transistor Mounting:through Hole; No. Of Pins:3Pins; Transition Frequency Ft:-; Dc Current Gain Hfe:1000Hfe; Msl:- Rohs Compliant: Yes
TIP Series PNP 80 W -100 V -10 A Epitaxial Darlington Transistor - TO-220-3
Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
Transistor Darlington PNP 100V 10A 3-Pin TO-3P Rail - Rail/Tube
Transistor Polarity:pnp; Collector Emitter Voltage V(Br)Ceo:100V; Dc Collector Current:10A; Power Dissipation Pd:80W; Transistor Mounting:through Hole; No. Of Pins:3Pins; Transition Frequency Ft:-; Dc Current Gain Hfe:1000Hfe; Msl:- Rohs Compliant: Yes
The three parts on the right have similar specifications to TIP147TU.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingBase Part NumberNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthRadiation HardeningRoHS StatusLead FreeVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):PublishedPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Voltage - Collector Emitter Breakdown (Max)Frequency - TransitionView Compare
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TIP147TUACTIVE (Last Updated: 2 days ago)12 WeeksThrough HoleThrough HoleTO-3P-3, SC-65-336.401gSILICON150°C TJTubee3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors-100V80W-10ATIP1471PNPSingle80WPNP - Darlington100V10A1000 @ 5A 4V2mA3V @ 40mA, 10A100V2V-100V-5V10006.35mm6.35mm6.35mmNoROHS3 CompliantLead Free---------------------
-
-------------------------------------------80V2.5V @ 8mA, 2APNP - DarlingtonTO-220-3-2WBulkTO-220-3150°C (TJ)Through Hole-1000 @ 1A, 4V2mA2A------
-
-------------------------------------------60V2.5V @ 8mA, 2APNP - DarlingtonTO-220AB-2WTubeTO-220-3-65°C ~ 150°C (TJ)Through Hole-1000 @ 1A, 4V2mA2A------
-
-14 Weeks-Through HoleTO-220-3----65°C~150°C TJBulke0-Active1 (Unlimited)--Tin/Lead (Sn/Pb)---------PNP - Darlington--1000 @ 1A 4V-2.5V @ 8mA, 2A---------Non-RoHS Compliant---------------2017NOT SPECIFIEDnot_compliantNOT SPECIFIED100V25MHz
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