STMicroelectronics TIP147T
- Part Number:
- TIP147T
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 3068735-TIP147T
- Description:
- TRANS PNP DARL 100V 10A TO-220
- Datasheet:
- TO220B03 Pkg Drawing
STMicroelectronics TIP147T technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics TIP147T.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time2 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Weight1.214g
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingBulk
- Published2013
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-100V
- Max Power Dissipation80W
- Current Rating-2A
- Base Part NumberTIP147
- Number of Elements1
- PolarityPNP
- Element ConfigurationSingle
- Power Dissipation80W
- Transistor TypePNP - Darlington
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current10A
- DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 5A 4V
- Current - Collector Cutoff (Max)2mA
- Vce Saturation (Max) @ Ib, Ic3V @ 40mA, 10A
- Collector Emitter Breakdown Voltage100V
- Collector Emitter Saturation Voltage2V
- Collector Base Voltage (VCBO)-100V
- Emitter Base Voltage (VEBO)-5V
- hFE Min1000
- Height9.4mm
- Length10.67mm
- Width4.83mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
TIP147T Overview
In this device, the DC current gain is 1000 @ 5A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 40mA, 10A.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -2A for this device.Single BJT transistor is possible for the collector current to fall as low as 10A volts at Single BJT transistors maximum.
TIP147T Features
the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 10A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
TIP147T Applications
There are a lot of ON Semiconductor
TIP147T applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 1000 @ 5A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 40mA, 10A.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -2A for this device.Single BJT transistor is possible for the collector current to fall as low as 10A volts at Single BJT transistors maximum.
TIP147T Features
the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 10A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
TIP147T Applications
There are a lot of ON Semiconductor
TIP147T applications of single BJT transistors.
Inverter
Interface
Driver
Muting
TIP147T More Descriptions
Transistor: PNP; bipolar; Darlington; 100V; 10A; 90W; TO220AB
TIP147 Series PNP 100 V 10 A Complementary Power Darlington Transistor -TO-220-3
Trans Darlington PNP 100V 10A 90000mW 3-Pin(3 Tab) TO-220AB Tube
Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220, Plastic/Epoxy, 3 Pin
Power Bipolar, PNP, 4V, 40mA, TO-220, TubeSTMicroelectronics SCT
DARLINGTON TRANSISTOR, PNP, TO-220; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 90W; DC Collector Current: 15A; DC Current Gain hFE: 1000hFE; Transistor
DARLINGTON TRANSISTOR, PNP, 100V, 10A, TO-220; Transistor Polarity:PNP; No. of Pins:3Pins; Transistor Mounting:Through Hole; Operating Temperature Max:150°C; Product Range:-; Qualification:-; Collector Emitter Voltage Max:100V RoHS Compliant: Yes
TIP147 Series PNP 100 V 10 A Complementary Power Darlington Transistor -TO-220-3
Trans Darlington PNP 100V 10A 90000mW 3-Pin(3 Tab) TO-220AB Tube
Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220, Plastic/Epoxy, 3 Pin
Power Bipolar, PNP, 4V, 40mA, TO-220, TubeSTMicroelectronics SCT
DARLINGTON TRANSISTOR, PNP, TO-220; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 90W; DC Collector Current: 15A; DC Current Gain hFE: 1000hFE; Transistor
DARLINGTON TRANSISTOR, PNP, 100V, 10A, TO-220; Transistor Polarity:PNP; No. of Pins:3Pins; Transistor Mounting:Through Hole; Operating Temperature Max:150°C; Product Range:-; Qualification:-; Collector Emitter Voltage Max:100V RoHS Compliant: Yes
The three parts on the right have similar specifications to TIP147T.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingBase Part NumberNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthRadiation HardeningRoHS StatusLead FreeVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):View Compare
-
TIP147TACTIVE (Last Updated: 3 days ago)2 WeeksThrough HoleThrough HoleTO-220-331.214gSILICON150°C TJBulk2013e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors-100V80W-2ATIP1471PNPSingle80WPNP - Darlington100V10A1000 @ 5A 4V2mA3V @ 40mA, 10A100V2V-100V-5V10009.4mm10.67mm4.83mmNoROHS3 CompliantLead Free---------------
-
--------------------------------------------60V2.5V @ 8mA, 2APNP - DarlingtonTO-220AB-2WTubeTO-220-3-65°C ~ 150°C (TJ)Through Hole-1000 @ 1A, 4V2mA2A
-
--------------------------------------------100V2.5V @ 8mA, 2APNP - DarlingtonTO-220AB-2WTubeTO-220-3-65°C ~ 150°C (TJ)Through Hole-1000 @ 1A, 4V2mA2A
-
--------------------------------------------80V4V @ 20mA, 5ANPN - DarlingtonTO-220AB-2WTubeTO-220-3150°C (TJ)Through Hole-1000 @ 3A, 3V500µA5A
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