STMicroelectronics TIP147

Name: TIP147
Brand: STMicroelectronics
SKU: 2465477-TIP147
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: TIP147

Manufacturer:: STMicroelectronics

Ventron No:: 2465477-TIP147

Description:: TRANS PNP DARL 100V 10A TO-247

ECAD Model:

Datasheet:: TIP14x

Part Pictures

Specifications

STMicroelectronics TIP147 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics TIP147.

Factory Lead Time
8 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Weight
9.071847g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-100V
Max Power Dissipation
125W
Current Rating
-10A
Base Part Number
TIP147
Pin Count
3
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Power Dissipation
125W
Transistor Application
SWITCHING
Transistor Type
PNP - Darlington
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 5A 4V
Current - Collector Cutoff (Max)
2mA
Vce Saturation (Max) @ Ib, Ic
3V @ 40mA, 10A
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
2V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
hFE Min
500
VCEsat-Max
3 V
Height
20.15mm
Length
15.75mm
Width
5.15mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

TIP147 Description The TIP147 is made utilizing planar technology and a monolithic Darlington design. The transistors that result have an outstanding high gain performance and a very low saturation voltage.
TIP147 Features Monolithic Darlington configuration
Integrated antiparallel collector-emitter diode
High DC Current Gain
Min hFE = 1000 @ IC
= 5 A, VCE = 4 V
Collector-Emitter Sustaining Voltage @ 30 mA
VCEO(sus) = 60 Vdc (Min) TIP140, TIP145
VCEO(sus) = 80 Vdc (Min) TIP141, TIP146
VCEO(sus) = 100 Vdc (Min) TIP142, TIP147
Monolithic Construction with Built-In Base-Emitter Shunt Resistor
Pb-Free Packages are Available
TIP147 Applications Linear and switching industrial equipment
General Purpose Amplifier
Low-Frequency Switching

TIP147 More Descriptions

TIP147 Series PNP 100 V 10 A Complementary Power Darlington Transistor -TO-247-3
Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-247, Plastic/Epoxy, 3 Pin
Trans Darlington PNP 100V 10A 125000mW 3-Pin(3 Tab) TO-247 Tube
Transistor Darlington PNP -10A/-100V 125W TO247 TIP 147
Trans Darlington PNP 100V 10A 3-Pin (3 Tab) SOT-93 Rail
Bipolar Transistor, Pnp, -100V; Transistor Polarity:Pnp; Collector Emitter Voltage V(Br)Ceo:100V; Dc Collector Current:10A; Power Dissipation Pd:125W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency Ft:- Rohs Compliant: Yes |Stmicroelectronics TIP147

Product Comparison

The three parts on the right have similar specifications to TIP147.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Max Power Dissipation

Current Rating

Base Part Number

Pin Count

Number of Elements

Polarity

Element Configuration

Power Dissipation

Transistor Application

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

VCEsat-Max

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Voltage - Collector Emitter Breakdown (Max):

Vce Saturation (Max) @ Ib, Ic:

Transistor Type:

Supplier Device Package:

Series:

Power - Max:

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Frequency - Transition:

DC Current Gain (hFE) (Min) @ Ic, Vce:

Current - Collector Cutoff (Max):

Current - Collector (Ic) (Max):

View Compare
TIP147

STMicroelectronics

8 Weeks

Through Hole

Through Hole

TO-247-3

3

9.071847g

SILICON

150°C TJ

Tube

e3

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

Other Transistors

-100V

125W

-10A

TIP147

3

1

PNP

Single

125W

SWITCHING

PNP - Darlington

100V

10A

1000 @ 5A 4V

2mA

3V @ 40mA, 10A

100V

2V

100V

5V

500

3 V

20.15mm

15.75mm

5.15mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
TIP116

Fairchild/ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

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-

-

80V

2.5V @ 8mA, 2A

PNP - Darlington

TO-220-3

-

2W

Bulk

TO-220-3

150°C (TJ)

Through Hole

-

1000 @ 1A, 4V

2mA

2A

TIP147 vs TIP116
TIP115

ON Semiconductor

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60V

2.5V @ 8mA, 2A

PNP - Darlington

TO-220AB

-

2W

Tube

TO-220-3

-65°C ~ 150°C (TJ)

Through Hole

-

1000 @ 1A, 4V

2mA

2A

TIP147 vs TIP115
TIP117

ON Semiconductor

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100V

2.5V @ 8mA, 2A

PNP - Darlington

TO-220AB

-

2W

Tube

TO-220-3

-65°C ~ 150°C (TJ)

Through Hole

-

1000 @ 1A, 4V

2mA

2A

TIP147 vs TIP117