STMicroelectronics TIP146
- Part Number:
- TIP146
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2465948-TIP146
- Description:
- TRANS PNP DARL 80V 10A TO-247
- Datasheet:
- TIP146
STMicroelectronics TIP146 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics TIP146.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-218-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- JESD-609 Codee0
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- SubcategoryOther Transistors
- Voltage - Rated DC-80V
- Max Power Dissipation125W
- Reach Compliance Codenot_compliant
- Current Rating-10A
- Base Part NumberTIP146
- Qualification StatusNot Qualified
- Number of Elements1
- PolarityPNP
- Element ConfigurationSingle
- Power Dissipation125W
- Transistor ApplicationSWITCHING
- Transistor TypePNP - Darlington
- Collector Emitter Voltage (VCEO)3V
- Max Collector Current10A
- DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 5A 4V
- Current - Collector Cutoff (Max)2mA
- Vce Saturation (Max) @ Ib, Ic3V @ 40mA, 10A
- Collector Emitter Breakdown Voltage80V
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)5V
- hFE Min1000
- Continuous Collector Current10A
- VCEsat-Max3 V
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
TIP146 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 1000 @ 5A 4V.When VCE saturation is 3V @ 40mA, 10A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 10A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -10A.A maximum collector current of 10A volts can be achieved.
TIP146 Features
the DC current gain for this device is 1000 @ 5A 4V
the vce saturation(Max) is 3V @ 40mA, 10A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
TIP146 Applications
There are a lot of STMicroelectronics
TIP146 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 1000 @ 5A 4V.When VCE saturation is 3V @ 40mA, 10A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 10A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -10A.A maximum collector current of 10A volts can be achieved.
TIP146 Features
the DC current gain for this device is 1000 @ 5A 4V
the vce saturation(Max) is 3V @ 40mA, 10A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
TIP146 Applications
There are a lot of STMicroelectronics
TIP146 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
TIP146 More Descriptions
Transistor Pnp Silicon Darlington Bvceo=80V Ic=10Ato-247 Case With Base-Emitter Shunt Resistors
T-PNP SI- PO DARLINGTONNTE Electronics
TRANS PNP 80V 10A TO218
T-PNP SI- PO DARLINGTONNTE Electronics
TRANS PNP 80V 10A TO218
The three parts on the right have similar specifications to TIP146.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationReach Compliance CodeCurrent RatingBase Part NumberQualification StatusNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentVCEsat-MaxREACH SVHCRoHS StatusLead FreeVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Factory Lead TimePublishedPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Voltage - Collector Emitter Breakdown (Max)Frequency - TransitionView Compare
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TIP146Through HoleThrough HoleTO-218-33SILICON150°C TJTubee0Obsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)Other Transistors-80V125Wnot_compliant-10ATIP146Not Qualified1PNPSingle125WSWITCHINGPNP - Darlington3V10A1000 @ 5A 4V2mA3V @ 40mA, 10A80V80V5V100010A3 VNo SVHCROHS3 CompliantLead Free---------------------
-
----------------------------------------100V2.5V @ 8mA, 2APNP - DarlingtonTO-220AB-2WTubeTO-220-3-65°C ~ 150°C (TJ)Through Hole-1000 @ 1A, 4V2mA2A------
-
----------------------------------------80V4V @ 20mA, 5ANPN - DarlingtonTO-220AB-2WTubeTO-220-3150°C (TJ)Through Hole-1000 @ 3A, 3V500µA5A------
-
-Through HoleTO-220-3---65°C~150°C TJBulke0Active1 (Unlimited)--Tin/Lead (Sn/Pb)---not_compliant--------PNP - Darlington--1000 @ 1A 4V-2.5V @ 8mA, 2A-------Non-RoHS Compliant---------------14 Weeks2017NOT SPECIFIEDNOT SPECIFIED100V25MHz
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