ON Semiconductor TIP145G

Name: TIP145G
Brand: ON Semiconductor
SKU: 2466033-TIP145G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: TIP145G

Manufacturer:: ON Semiconductor

Ventron No:: 2466033-TIP145G

Description:: TRANS PNP DARL 60V 10A TO-218

ECAD Model:

Datasheet:: TIP145G

Specifications

ON Semiconductor TIP145G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor TIP145G.

Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type
Through Hole
Package / Case
TO-247-3
Surface Mount
NO
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2000
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-60V
Max Power Dissipation
125W
Peak Reflow Temperature (Cel)
260
Current Rating
-10A
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
TIP14*
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Power Dissipation
125W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Transistor Type
PNP - Darlington
Collector Emitter Voltage (VCEO)
3V
Max Collector Current
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 5A 4V
Current - Collector Cutoff (Max)
2mA
JEDEC-95 Code
TO-218
Vce Saturation (Max) @ Ib, Ic
3V @ 40mA, 10A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
4MHz
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
hFE Min
1000
Continuous Collector Current
10A
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

TIP145G Overview
This device has a DC current gain of 1000 @ 5A 4V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 3V @ 40mA, 10A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 10A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -10A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 4MHz.A maximum collector current of 10A volts is possible.

TIP145G Features
the DC current gain for this device is 1000 @ 5A 4V
the vce saturation(Max) is 3V @ 40mA, 10A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
a transition frequency of 4MHz

TIP145G Applications
There are a lot of ON Semiconductor
TIP145G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

TIP145G More Descriptions

Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-218, Plastic/Epoxy, 3 Pin
Compliant 1000 PNP Lead Free Bulk TO-247-3 -10 A 3
Darlington Bipolar Transistor; Transistor Polarity:Dual P Channel; Power Dissipation:125W; C-E Breakdown Voltage:-60V; DC Current Gain Min (hfe):500; Collector Current:10A; Package/Case:TO-218; Leaded Process Compatible:Yes RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to TIP145G.

Image

Part Number

Manufacturer

Lifecycle Status

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Max Power Dissipation

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Qualification Status

Number of Elements

Polarity

Element Configuration

Power Dissipation

Case Connection

Transistor Application

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

JEDEC-95 Code

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Continuous Collector Current

RoHS Status

Lead Free

Voltage - Collector Emitter Breakdown (Max):

Vce Saturation (Max) @ Ib, Ic:

Transistor Type:

Supplier Device Package:

Series:

Power - Max:

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Frequency - Transition:

DC Current Gain (hFE) (Min) @ Ic, Vce:

Current - Collector Cutoff (Max):

Current - Collector (Ic) (Max):

View Compare
TIP145G

ON Semiconductor

LAST SHIPMENTS (Last Updated: 1 week ago)

Through Hole

TO-247-3

NO

3

SILICON

-65°C~150°C TJ

Tube

2000

e3

yes

Obsolete

1 (Unlimited)

3

EAR99

Tin (Sn)

Other Transistors

-60V

125W

260

-10A

40

TIP14*

3

Not Qualified

1

PNP

Single

125W

COLLECTOR

SWITCHING

PNP - Darlington

3V

10A

1000 @ 5A 4V

2mA

TO-218

3V @ 40mA, 10A

60V

4MHz

60V

5V

1000

10A

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
TIP115

ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

60V

2.5V @ 8mA, 2A

PNP - Darlington

TO-220AB

-

2W

Tube

TO-220-3

-65°C ~ 150°C (TJ)

Through Hole

-

1000 @ 1A, 4V

2mA

2A

TIP145G vs TIP115
TIP117

ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

100V

2.5V @ 8mA, 2A

PNP - Darlington

TO-220AB

-

2W

Tube

TO-220-3

-65°C ~ 150°C (TJ)

Through Hole

-

1000 @ 1A, 4V

2mA

2A

TIP145G vs TIP117
TIP102

ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

100V

2.5V @ 80mA, 8A

NPN - Darlington

TO-220AB

-

2W

Tube

TO-220-3

-65°C ~ 150°C (TJ)

Through Hole

-

1000 @ 3A, 4V

50µA

8A

TIP145G vs TIP102