ON Semiconductor TIP132G

Name: TIP132G
Brand: ON Semiconductor
SKU: 3585721-TIP132G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: TIP132G

Manufacturer:: ON Semiconductor

Ventron No:: 3585721-TIP132G

Description:: TRANS NPN DARL 100V 8A TO-220AB

ECAD Model:

Datasheet:: TIP132G

Specifications

ON Semiconductor TIP132G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor TIP132G.

Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
2W
Transistor Type
NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 4A 4V
Current - Collector Cutoff (Max)
500μA
Vce Saturation (Max) @ Ib, Ic
3V @ 30mA, 6A
Voltage - Collector Emitter Breakdown (Max)
100V
Current - Collector (Ic) (Max)
8A
RoHS Status
ROHS3 Compliant

Description

TIP132G Overview
In this device, the DC current gain is 1000 @ 4A 4V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 30mA, 6A.Product comes in the supplier's device package TO-220AB.There is a 100V maximal voltage in the device due to collector-emitter breakdown.

TIP132G Features
the DC current gain for this device is 1000 @ 4A 4V
the vce saturation(Max) is 3V @ 30mA, 6A
the supplier device package of TO-220AB

TIP132G Applications
There are a lot of Rochester Electronics, LLC
TIP132G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

TIP132G More Descriptions

Tube Through Hole NPN - Darlington Single Bipolar (BJT) Transistor 1000 @ 4A 4V 8A 2W 100V
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
NPN Darlington Bipolar Power Transistor

Product Comparison

The three parts on the right have similar specifications to TIP132G.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Power - Max

Transistor Type

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

RoHS Status

Voltage - Collector Emitter Breakdown (Max):

Vce Saturation (Max) @ Ib, Ic:

Transistor Type:

Supplier Device Package:

Series:

Power - Max:

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Frequency - Transition:

DC Current Gain (hFE) (Min) @ Ic, Vce:

Current - Collector Cutoff (Max):

Current - Collector (Ic) (Max):

Factory Lead Time

Published

JESD-609 Code

Terminal Finish

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Frequency - Transition

View Compare
TIP132G

ON Semiconductor

Through Hole

TO-220-3

TO-220AB

-65°C~150°C TJ

Tube

Obsolete

1 (Unlimited)

2W

NPN - Darlington

1000 @ 4A 4V

500μA

3V @ 30mA, 6A

100V

8A

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
TIP122

STMicroelectronics

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

100V

4V @ 20mA, 5A

NPN - Darlington

TO-220AB

-

2W

Tube

TO-220-3

150°C (TJ)

Through Hole

-

1000 @ 3A, 3V

500µA

5A

-

-

-

-

-

-

-

-

TIP132G vs TIP122
TIP116

Fairchild/ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

80V

2.5V @ 8mA, 2A

PNP - Darlington

TO-220-3

-

2W

Bulk

TO-220-3

150°C (TJ)

Through Hole

-

1000 @ 1A, 4V

2mA

2A

-

-

-

-

-

-

-

-

TIP132G vs TIP116
TIP117 TIN/LEAD

Central Semiconductor Corp

Through Hole

TO-220-3

-

-65°C~150°C TJ

Bulk

Active

1 (Unlimited)

-

PNP - Darlington

1000 @ 1A 4V

-

2.5V @ 8mA, 2A

100V

-

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

14 Weeks

2017

e0

Tin/Lead (Sn/Pb)

NOT SPECIFIED

not_compliant

NOT SPECIFIED

25MHz

TIP132G vs TIP117 TIN/LEAD