STMicroelectronics TIP132

Name: TIP132
Brand: STMicroelectronics
SKU: 2463260-TIP132
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: TIP132

Manufacturer:: STMicroelectronics

Ventron No:: 2463260-TIP132

Description:: TRANS NPN DARL 100V 8A TO-220

ECAD Model:

Datasheet:: TIP132

Part Pictures

Specifications

STMicroelectronics TIP132 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics TIP132.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
8 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
6.000006g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
100V
Max Power Dissipation
2W
Current Rating
8A
Base Part Number
TIP132
Pin Count
3
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
2W
Transistor Application
SWITCHING
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
8A
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 4A 4V
Current - Collector Cutoff (Max)
500μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
4V @ 30mA, 6A
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
2V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
hFE Min
500
VCEsat-Max
3 V
Height
9.15mm
Length
10.4mm
Width
4.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

TIP132 Overview
This device has a DC current gain of 1000 @ 4A 4V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 2V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 8A.The maximum collector current is 8A volts.

TIP132 Features
the DC current gain for this device is 1000 @ 4A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 30mA, 6A
the emitter base voltage is kept at 5V
the current rating of this device is 8A

TIP132 Applications
There are a lot of STMicroelectronics
TIP132 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

TIP132 More Descriptions

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans Darlington NPN 100V 8A 2000mW 3-Pin(3 Tab) TO-220AB Tube
Bipolar (Bjt) Single Transistor, Darlington, Npn, 100 V, 2 W, 8 A, 15000 Rohs Compliant: Yes |Stmicroelectronics TIP132
Darlington Transistor, TO-220AB, NPN, 100V
Power Bipolar, NPN, 4V, 16mA, TO-220, TubeSTMicroelectronics SCT
100V 1000@4V,4A NPN 8A 2W TO-220 Darlington Transistors ROHS
DARLINGTON TRANSISTOR, TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 2W; DC Collector Current: 8A; DC Current Gain hFE: 15000hFE; Transistor Case

Product Comparison

The three parts on the right have similar specifications to TIP132.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Max Power Dissipation

Current Rating

Base Part Number

Pin Count

Number of Elements

Polarity

Element Configuration

Power Dissipation

Transistor Application

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

JEDEC-95 Code

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

VCEsat-Max

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Voltage - Collector Emitter Breakdown (Max):

Vce Saturation (Max) @ Ib, Ic:

Transistor Type:

Supplier Device Package:

Series:

Power - Max:

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Frequency - Transition:

DC Current Gain (hFE) (Min) @ Ic, Vce:

Current - Collector Cutoff (Max):

Current - Collector (Ic) (Max):

View Compare
TIP132

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

8 Weeks

Through Hole

Through Hole

TO-220-3

3

6.000006g

SILICON

150°C TJ

Tube

e3

Active

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

Other Transistors

100V

2W

8A

TIP132

3

1

NPN

Single

2W

SWITCHING

NPN - Darlington

100V

8A

1000 @ 4A 4V

500μA

TO-220AB

4V @ 30mA, 6A

100V

2V

100V

5V

500

3 V

9.15mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
TIP122

STMicroelectronics

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

100V

4V @ 20mA, 5A

NPN - Darlington

TO-220AB

-

2W

Tube

TO-220-3

150°C (TJ)

Through Hole

-

1000 @ 3A, 3V

500µA

5A

TIP132 vs TIP122
TIP121

ON Semiconductor

-

-

-

-

-

-

-

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-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

80V

4V @ 20mA, 5A

NPN - Darlington

TO-220AB

-

2W

Tube

TO-220-3

-65°C ~ 150°C (TJ)

Through Hole

-

1000 @ 3A, 3V

500µA

5A

TIP132 vs TIP121
TIP116

Fairchild/ON Semiconductor

-

-

-

-

-

-

-

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-

-

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-

-

-

-

-

-

-

-

-

-

-

-

-

-

80V

2.5V @ 8mA, 2A

PNP - Darlington

TO-220-3

-

2W

Bulk

TO-220-3

150°C (TJ)

Through Hole

-

1000 @ 1A, 4V

2mA

2A

TIP132 vs TIP116