Fairchild/ON Semiconductor TIP120TU
- Part Number:
- TIP120TU
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3068774-TIP120TU
- Description:
- TRANS NPN DARL 60V 5A TO-220
- Datasheet:
- TIP120-22 TO220B03 Pkg Drawing
Fairchild/ON Semiconductor TIP120TU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor TIP120TU.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time2 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Weight1.214g
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC60V
- Max Power Dissipation2W
- Current Rating5A
- Base Part NumberTIP120
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation2W
- Transistor ApplicationSWITCHING
- Transistor TypeNPN - Darlington
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current5A
- DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 3A 3V
- Current - Collector Cutoff (Max)500μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic4V @ 20mA, 5A
- Collector Emitter Breakdown Voltage80V
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage2V
- Max Breakdown Voltage60V
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)5V
- hFE Min1000
- Height16.51mm
- Length10.67mm
- Width4.83mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
TIP120TU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 1000 @ 3A 3V.With a collector emitter saturation voltage of 2V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 4V @ 20mA, 5A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 5A.A transition frequency of 50MHz is present in the part.There is a breakdown input voltage of 60V volts that it can take.Collector current can be as low as 5A volts at its maximum.
TIP120TU Features
the DC current gain for this device is 1000 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 20mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is 5A
a transition frequency of 50MHz
TIP120TU Applications
There are a lot of ON Semiconductor
TIP120TU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 1000 @ 3A 3V.With a collector emitter saturation voltage of 2V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 4V @ 20mA, 5A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 5A.A transition frequency of 50MHz is present in the part.There is a breakdown input voltage of 60V volts that it can take.Collector current can be as low as 5A volts at its maximum.
TIP120TU Features
the DC current gain for this device is 1000 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 20mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is 5A
a transition frequency of 50MHz
TIP120TU Applications
There are a lot of ON Semiconductor
TIP120TU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
TIP120TU More Descriptions
TIP Series NPN 2 W 60 V 5 A Epitaxial Darlington Transistor - TO-220-3
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Medium Power NPN Darlington Bipolar Power Transistor
Transistor Darlington NPN 60V 5A 3-Pin TO-220AB Rail - Rail/Tube
TO-220-3L Bipolar Transistors - BJT ROHS
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Medium Power NPN Darlington Bipolar Power Transistor
Transistor Darlington NPN 60V 5A 3-Pin TO-220AB Rail - Rail/Tube
TO-220-3L Bipolar Transistors - BJT ROHS
The three parts on the right have similar specifications to TIP120TU.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingBase Part NumberNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):View Compare
-
TIP120TUACTIVE (Last Updated: 2 days ago)2 WeeksThrough HoleThrough HoleTO-220-331.214gSILICON150°C TJTube2008e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors60V2W5ATIP1201NPNSingle2WSWITCHINGNPN - Darlington60V5A1000 @ 3A 3V500μATO-220AB4V @ 20mA, 5A80V50MHz2V60V60V5V100016.51mm10.67mm4.83mmNo SVHCNoROHS3 CompliantLead Free---------------
-
-------------------------------------------------80V2.5V @ 8mA, 2APNP - DarlingtonTO-220-3-2WBulkTO-220-3150°C (TJ)Through Hole-1000 @ 1A, 4V2mA2A
-
-------------------------------------------------100V2.5V @ 8mA, 2APNP - DarlingtonTO-220AB-2WTubeTO-220-3150°C (TJ)Through Hole-1000 @ 1A, 4V2mA2A
-
-------------------------------------------------100V2.5V @ 80mA, 8ANPN - DarlingtonTO-220AB-2WTubeTO-220-3-65°C ~ 150°C (TJ)Through Hole-1000 @ 3A, 4V50µA8A
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