ON Semiconductor TIP117G
- Part Number:
- TIP117G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2465469-TIP117G
- Description:
- TRANS PNP DARL 100V 2A TO220AB
- Datasheet:
- TIP117G
ON Semiconductor TIP117G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor TIP117G.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Additional FeatureLEADFORM OPTIONS ARE AVAILABLE
- SubcategoryOther Transistors
- Voltage - Rated DC-100V
- Max Power Dissipation2W
- Peak Reflow Temperature (Cel)260
- Current Rating-2A
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberTIP11*
- Pin Count3
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation2W
- Case ConnectionCOLLECTOR
- Transistor ApplicationAMPLIFIER
- Transistor TypePNP - Darlington
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current2A
- DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 1A 4V
- Current - Collector Cutoff (Max)2mA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic2.5V @ 8mA, 2A
- Collector Emitter Breakdown Voltage100V
- Transition Frequency25MHz
- Collector Emitter Saturation Voltage2.5V
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)5V
- hFE Min1000
- Continuous Collector Current2A
- Height15.748mm
- Length10.2616mm
- Width4.826mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
TIP117G Overview
In this device, the DC current gain is 1000 @ 1A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.5V @ 8mA, 2A.A 2A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 25MHz.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
TIP117G Features
the DC current gain for this device is 1000 @ 1A 4V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 8mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 25MHz
TIP117G Applications
There are a lot of ON Semiconductor
TIP117G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 1000 @ 1A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.5V @ 8mA, 2A.A 2A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 25MHz.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
TIP117G Features
the DC current gain for this device is 1000 @ 1A 4V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 8mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 25MHz
TIP117G Applications
There are a lot of ON Semiconductor
TIP117G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
TIP117G More Descriptions
Medium Power NPN Darlington Bipolar Power Transistor PNP , 2.0 A, 100 V
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Transistor Darlington PNP 100V 2A 3-Pin TO-220AB Rail - Rail/Tube
Transistor, Darlington,Si,PNP,Medium Power, Switch,Vo 100VDC,VI 5VDC,Io 2ADC
TRANSISTOR, BIPOL, PNP, 100V; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 50W; DC Collector Current: 2A; DC Current Gain hFE: 500hFE; Transistor Case St
Transistor Polarity:NPN; No. of Pins:3Pins; Transistor Mounting:Through Hole; Operating Temperature Max:150°C; Product Range:-; Qualification:AEC-Q101; Collector Emitter Voltage Max:100V; Continuous Collector Current:2A RoHS Compliant: Yes
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Transistor Darlington PNP 100V 2A 3-Pin TO-220AB Rail - Rail/Tube
Transistor, Darlington,Si,PNP,Medium Power, Switch,Vo 100VDC,VI 5VDC,Io 2ADC
TRANSISTOR, BIPOL, PNP, 100V; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 50W; DC Collector Current: 2A; DC Current Gain hFE: 500hFE; Transistor Case St
Transistor Polarity:NPN; No. of Pins:3Pins; Transistor Mounting:Through Hole; Operating Temperature Max:150°C; Product Range:-; Qualification:AEC-Q101; Collector Emitter Voltage Max:100V; Continuous Collector Current:2A RoHS Compliant: Yes
The three parts on the right have similar specifications to TIP117G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsPolarityElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Terminal FinishReach Compliance CodeVoltage - Collector Emitter Breakdown (Max)Frequency - TransitionView Compare
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TIP117GACTIVE (Last Updated: 2 days ago)8 WeeksTinThrough HoleTO-220-3NO34.535924gSILICON-65°C~150°C TJTube2006e3yesActive1 (Unlimited)3EAR99LEADFORM OPTIONS ARE AVAILABLEOther Transistors-100V2W260-2A40TIP11*31NPNSingle2WCOLLECTORAMPLIFIERPNP - Darlington100V2A1000 @ 1A 4V2mATO-220AB2.5V @ 8mA, 2A100V25MHz2.5V100V5V10002A15.748mm10.2616mm4.826mmNo SVHCNoROHS3 CompliantLead Free-------------------
-
------------------------------------------------------100V2.5V @ 8mA, 2APNP - DarlingtonTO-220AB-2WTubeTO-220-3150°C (TJ)Through Hole-1000 @ 1A, 4V2mA2A----
-
------------------------------------------------------80V4V @ 20mA, 5ANPN - DarlingtonTO-220AB-2WTubeTO-220-3150°C (TJ)Through Hole-1000 @ 3A, 3V500µA5A----
-
-14 Weeks-Through HoleTO-220-3-----65°C~150°C TJBulk2017e0-Active1 (Unlimited)------NOT SPECIFIED-NOT SPECIFIED--------PNP - Darlington--1000 @ 1A 4V--2.5V @ 8mA, 2A------------Non-RoHS Compliant---------------Tin/Lead (Sn/Pb)not_compliant100V25MHz
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